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Optical Properties of Low Dimensional Semiconductor Structures

Optical Properties of Low Dimensional Semiconductor Structures PDF Author: Martin Moran
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Optical Properties of Low Dimensional Semiconductor Structures

Optical Properties of Low Dimensional Semiconductor Structures PDF Author: Martin Moran
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Theory of the Optical Properties of Low Dimensional Semiconductor Structures

Theory of the Optical Properties of Low Dimensional Semiconductor Structures PDF Author: Aaron Neil Forshaw
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description


Optical Properties of Narrow-Gap Low-Dimensional Structures

Optical Properties of Narrow-Gap Low-Dimensional Structures PDF Author: Clivia M. Sotomayor Torres
Publisher: Springer Science & Business Media
ISBN: 1461318793
Category : Science
Languages : en
Pages : 357

Book Description
This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization of III-V, II-VI, and IV-VI materials, discussed in Part II, were an integral part of the workshop. Considering the small masses of the carriers in narrow-gap low dimensional structures (LOS), in Part I the enhanced band mixing and magnetic field effects are explored in the context of the envelope function approximation. Optical nonlinearities and energy relaxation phenomena applied to the well-known systems of HgCdTe and GaAs/GaAIAs, respectively, are reviewed with comments on their extension to narrow gap LOS. The relevance of optical observations in quantum transport studies is illustrated in Part IV. A review of devices based on epitaxial narrow-gap materials defines a frame of reference for future ones based on two-dimensional narrow-gap semiconductors; in addition, an analysis of the physics of quantum well lasers provides a guide to relevant parameters for narrow-gap laser devices for the infrared (Part V). The roles and potentials of special techniques are explored in Part VI, with emphasis on hydrostatic pressure techniques, since this has a pronounced effect in small-mass, narrow-gap, non-parabolic structures.

Optical Properties Of Low-dimensional Materials

Optical Properties Of Low-dimensional Materials PDF Author: Yoshihiko Kanemitsu
Publisher: World Scientific
ISBN: 9814500542
Category : Technology & Engineering
Languages : en
Pages : 436

Book Description
This book surveys recent experimental and theoretical studies on optical properties of low-dimensional materials, e.g., artificial crystals in zeolites, C60 and its related compounds, silicon nanostructures including porous Si, II-VI and III-V semiconductor quantum structures, and Pb-based natural quantum-well systems. The eight excellent detailed review articles are written by authorities on each field in Japan. All the materials introduced in this book yield new optical phenomena originating from their mesoscopic and low-dimensional characters contributing to a new research field of condensed matter and optical physics.

Optical Properties of Low Dimensional Silicon Structures

Optical Properties of Low Dimensional Silicon Structures PDF Author: B. Bensahel
Publisher: Springer Science & Business Media
ISBN: 9401120927
Category : Science
Languages : en
Pages : 245

Book Description
The workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.

Devices Based on Low-Dimensional Semiconductor Structures

Devices Based on Low-Dimensional Semiconductor Structures PDF Author: M. Balkanski
Publisher: Springer Science & Business Media
ISBN: 9400902891
Category : Science
Languages : en
Pages : 417

Book Description
Low-dimensional semiconductor quantum structures are a major, high-technological development that has a considerable industrial potential. The field is developing extremely rapidly and the present book represents a timely guide to the latest developments in device technology, fundamental properties, and some remarkable applications. The content is largely tutorial, and the book could be used as a textbook. The book deals with the physics, fabrication, characteristics and performance of devices based on low-dimensional semiconductor structures. It opens with fabrication procedures. The fundamentals of quantum structures and electro-optical devices are dealt with extensively. Nonlinear optical devices are discussed from the point of view of physics and applications of exciton saturation in MQW structures. Waveguide-based devices are also described in terms of linear and nonlinear coupling. The basics of pseudomorphic HEMT technology, device physics and materials layer design are presented. Each aspect is reviewed from the elementary basics up to the latest developments. Audience: Undergraduates in electrical engineering, graduates in physics and engineering schools. Useful for active scientists and engineers wishing to update their knowledge and understanding of recent developments.

Low-Dimensional Semiconductor Structures

Low-Dimensional Semiconductor Structures PDF Author: Keith Barnham
Publisher: Cambridge University Press
ISBN: 9780521599047
Category : Technology & Engineering
Languages : en
Pages : 408

Book Description
Low-Dimensional Semiconductor Structures offers a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication; electronic, optical, and transport properties; role in exploring new physical phenomena; and utilization in devices. The authors describe the epitaxial growth of semiconductors and the physical behavior of electrons and phonons in low-dimensional structures. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references.

Optical Properties of Narrow-Gap Low-Dimensional Structures

Optical Properties of Narrow-Gap Low-Dimensional Structures PDF Author: Clivia M Sotomayor Torres
Publisher:
ISBN: 9781461318804
Category :
Languages : en
Pages : 376

Book Description


The Physics of Low-dimensional Semiconductors

The Physics of Low-dimensional Semiconductors PDF Author: John H. Davies
Publisher: Cambridge University Press
ISBN: 9780521484916
Category : Science
Languages : en
Pages : 460

Book Description
The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors

Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors PDF Author: T.C. McGill
Publisher: Springer Science & Business Media
ISBN: 146845661X
Category : Science
Languages : en
Pages : 338

Book Description
This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized.