Optical Properties of GaAs Coupled Quantum Wells and Superlattices PDF Download

Author: Arnel Angud Salvador
Publisher:
ISBN:
Category :
Languages : en
Pages : 226

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Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Electronic books
Languages : en
Pages : 238

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A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Author: Abdellatif Bouchalkha
Publisher:
ISBN:
Category :
Languages : en
Pages : 226

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Author: Martin D. Dawson
Publisher:
ISBN:
Category :
Languages : en
Pages : 4

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Strained alloy InGaAs/GaAs multiple quantum well structures (MQWs), on GaAs substrates, are being investigated' for use in optical modulators, low-threshold diode lasers, photodetectors and other opto-electronic devices operating near 1 um. Attempts are being made to cover the 0.9-1.1 am spectral range by varying well-widths and/or alloy mole-fraction and by growing such structures on superlattice or alloy buffer layers. Special problems, however, are posed in growing these strained ternary alloy quantum wells with high quality by epitaxial techniques. Alloy concentration is difficult to reproduce, and alloy-disorder introduces an additional line-broadening contribution and non-uniformity into the materials. The critical thickness parameter places an upper limit on the indium mole-fraction (and thereby the strain) for growth directly on GaAs, restricting the flexibility in varying the well width for increased spectral coverage. Typically, this mole-fraction must be less than 0.2, and the lattice-parameter mismatch below 2%, for well-widths -10 nm. Here, we focus on structures in which each quantum well consists of an ordered InAs/GaAs short-period superlattice as an attractive alternative to the random InGaAs alloy structures. These all-binary MQWs are highly-strained (7% lattice parameter mismatch) and can accommodate high average indium mole-fraction (30-40%) in wide wells (10-20 nm) without evidence of strain relaxation due to misfit dislocation formation.

Author: Raphael Tsu
Publisher: Elsevier
ISBN: 0080968147
Category : Technology & Engineering
Languages : en
Pages : 346

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Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. - Written by one of the founders of this field - Delivers over 20% new material, including new research and new technological applications - Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials

Author: G. Martinez
Publisher: Springer Science & Business Media
ISBN: 9401580758
Category : Science
Languages : en
Pages : 327

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It is widely recognized that an understanding of the optical pro perties of matter will give a great deal of important information re levant to the fundamental physical properties. This is especially true in semiconductor physics for which, due to the intrinsic low screening of these materials, the optical response is quite rich. Their spectra reflect indeed as well electronic as spin or phonon transitions. This is also in the semiconductor field that artificial structures have been recently developed, showing for the first time specific physical properties related to the low dimentionality of the electronic and vi bronic properties : with this respect the quantum and fractional quan tum Hall effects are among the most well known aspects. The associated reduced screening is also a clear manifestation of these aspects and as such favors new optical properties or at least significantly enhan ces some of them. For all these reasons, it appeared necessary to try to review in a global way what the optical investigation has brought today about the understanding of the physics of semiconductors. This volume collects the papers presented at the NATO Advanced study Inst i tut e on "Optical Properties of Semiconductors" held at the Ettore Majorana Centre, Erice, Sicily on March 9th to 20th, 1992. This school brought together 70 scientists active in research related to optical properties of semiconductors. There were 12 lecturers who pro vided the main contributions .

Author: Loretta Pugh
Publisher:
ISBN:
Category :
Languages : en
Pages :

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ISBN:
Category :
Languages : en
Pages :

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Author: Ying Fu
Publisher: CRC Press
ISBN: 9814303275
Category : Technology & Engineering
Languages : en
Pages : 324

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This book discusses electrons and photons in and through nanostructures by the first-principles quantum mechanical theories and fundamental concepts (a unified coverage of nanostructured electronic and optical components) behind nanoelectronics and optoelectronics, the material basis, physical phenomena, device physics, as well as designs and applications. The combination of viewpoints presented in the book can help foster further research and cross-disciplinary interaction needed to surmount the barriers facing future generations of technology design.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 288

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