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Author: Harland G. Tompkins Publisher: Momentum Press ISBN: 1606507281 Category : Technology & Engineering Languages : en Pages : 138
Book Description
Ellipsometry is an experimental technique for determining the thickness and optical properties of thin films. It is ideally suited for films ranging in thickness from sub-nanometer to several microns. Spectroscopic measurements have greatly expanded the capabilities of this technique and introduced its use into all areas where thin films are found: semiconductor devices, flat panel and mobile displays, optical coating stacks, biological and medical coatings, protective layers, and more. While several scholarly books exist on the topic, this book provides a good introduction to the basic theory of the technique and its common applications. The target audience is not the ellipsometry scholar, but process engineers and students of materials science who are experts in their own fields and wish to use ellipsometry to measure thin film properties without becoming an expert in ellipsometry itself.
Author: Harland G. Tompkins Publisher: Momentum Press ISBN: 1606507281 Category : Technology & Engineering Languages : en Pages : 138
Book Description
Ellipsometry is an experimental technique for determining the thickness and optical properties of thin films. It is ideally suited for films ranging in thickness from sub-nanometer to several microns. Spectroscopic measurements have greatly expanded the capabilities of this technique and introduced its use into all areas where thin films are found: semiconductor devices, flat panel and mobile displays, optical coating stacks, biological and medical coatings, protective layers, and more. While several scholarly books exist on the topic, this book provides a good introduction to the basic theory of the technique and its common applications. The target audience is not the ellipsometry scholar, but process engineers and students of materials science who are experts in their own fields and wish to use ellipsometry to measure thin film properties without becoming an expert in ellipsometry itself.
Author: Hiroyuki Fujiwara Publisher: John Wiley & Sons ISBN: 9780470060186 Category : Technology & Engineering Languages : en Pages : 388
Book Description
Ellipsometry is a powerful tool used for the characterization of thin films and multi-layer semiconductor structures. This book deals with fundamental principles and applications of spectroscopic ellipsometry (SE). Beginning with an overview of SE technologies the text moves on to focus on the data analysis of results obtained from SE, Fundamental data analyses, principles and physical backgrounds and the various materials used in different fields from LSI industry to biotechnology are described. The final chapter describes the latest developments of real-time monitoring and process control which have attracted significant attention in various scientific and industrial fields.
Author: G.M. Crean Publisher: Elsevier ISBN: 044459664X Category : Technology & Engineering Languages : en Pages : 413
Book Description
This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.
Author: Publisher: ISBN: Category : Aeronautics Languages : en Pages : 804
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Maria Losurdo Publisher: Springer Science & Business Media ISBN: 3642339565 Category : Technology & Engineering Languages : en Pages : 740
Book Description
This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics. The core belief reflected in this book is that ellipsometry applied at the nanoscale offers new ways of addressing many current needs. The book also explores forward-looking potential applications.
Author: Yale Strausser Publisher: Momentum Press ISBN: 1606500414 Category : Technology & Engineering Languages : en Pages : 217
Book Description
"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.
Author: Gertjan Koster Publisher: Elsevier ISBN: 0857094955 Category : Technology & Engineering Languages : en Pages : 295
Book Description
Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research.Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth.With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. - Chapters review electron diffraction techniques, including the methodology for observations and measurements - Discusses the principles and applications of photoemission techniques - Examines alternative in situ characterisation techniques
Author: Publisher: ISBN: Category : Chemistry Languages : en Pages : 904
Book Description
Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Author: Philip Baumeister Publisher: SPIE Press ISBN: 9780819453136 Category : Technology & Engineering Languages : en Pages : 848
Book Description
Baumeister organizes this book around the key subjects associated with functions of optical thin film performance, and provides a valuable resource in the field of thin film technology. The information is widely backed up with citations to patents and published literature. The author draws from 25 years of experience teaching classes at the UCLA Extension Program, and at companies worldwide to answer questions, such as: what are the conventions for a given analysis formalism? and, what other design approaches have been tried for this application?
Author: Daniel Abou-Ras Publisher: John Wiley & Sons ISBN: 3527699015 Category : Science Languages : en Pages : 760
Book Description
The book focuses on advanced characterization methods for thin-film solar cells that have proven their relevance both for academic and corporate photovoltaic research and development. After an introduction to thin-film photovoltaics, highly experienced experts report on device and materials characterization methods such as electroluminescence analysis, capacitance spectroscopy, and various microscopy methods. In the final part of the book simulation techniques are presented which are used for ab-initio calculations of relevant semiconductors and for device simulations in 1D, 2D and 3D. Building on a proven concept, this new edition also covers thermography, transient optoelectronic methods, and absorption and photocurrent spectroscopy.
Author: Harland G. Tompkins
Author: Harland G. Tompkins
Author: Hiroyuki Fujiwara
Author: G.M. Crean
Author: 
Author: Maria Losurdo
Author: Yale Strausser
Author: Gertjan Koster
Author: 
Author: Philip Baumeister
Author: Daniel Abou-Ras