Author: Peter Leslie Edward Pegler
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Optical and Electrical Measurements on Electron Irradiated Gallium Arsenide
Author: Peter Leslie Edward Pegler
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Electrical Measurements on Electron Irradiated Gallium Arsenide
Electrical Measurements on Electron Irradiated Low-temperature Grown Molecular Beam Epitaxial Gallium Arsenide
Author: Susan M. Lindsay
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 130
Book Description
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 130
Book Description
Nuclear Science Abstracts
The Influence of Electron (1.5 MeV) and Proton (5 MeV) Irradiation on the Electrical, Optical, and Photoelectric Characteristics of Gallium Arsenide
Author: M. A. Krivov
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
The purpose of the present work is the study of the spectrum of radiation defects created by electrons (1.5 MeV) and protons (5 MeV) at temperatures close to 300K, their stability to annealing, and also the influence of an admixture of copper on the spectrum of the levels which develop after irradiation. For the investigation the authors used gallium arsenide of the n- and p-types of conductivity with a carrier concentration of 5 times ten to the 15th power to ten to the 18th power/cc.
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
Book Description
The purpose of the present work is the study of the spectrum of radiation defects created by electrons (1.5 MeV) and protons (5 MeV) at temperatures close to 300K, their stability to annealing, and also the influence of an admixture of copper on the spectrum of the levels which develop after irradiation. For the investigation the authors used gallium arsenide of the n- and p-types of conductivity with a carrier concentration of 5 times ten to the 15th power to ten to the 18th power/cc.
Electrical Characterization of Subthreshold Electron Irradiated Gallium Arsenide
Author: Magdalena Nel
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 664
Book Description
Publisher:
ISBN:
Category : Electrons
Languages : en
Pages : 664
Book Description
Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium on Compound Semiconductors held in St Petersburg, Russia, 23-27 September 1996
Author: M.S. Shur
Publisher: CRC Press
ISBN: 1000112314
Category : Science
Languages : en
Pages : 1087
Book Description
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Publisher: CRC Press
ISBN: 1000112314
Category : Science
Languages : en
Pages : 1087
Book Description
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.