Author: F. D. Shepherd (Jr.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 12
Book Description
On the Study of Fine Structure in Tunnel Junctions
Author: F. D. Shepherd (Jr.)
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 12
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 12
Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors
Author: D. K. Roy
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
Publisher: Elsevier
ISBN: 1483278956
Category : Technology & Engineering
Languages : en
Pages : 230
Book Description
Tunnelling and Negative Resistance Phenomena in Semiconductors presents a critical review of tunneling theory and shows how this leads to the negative resistance phenomena in pn junctions. The physics, technology, and circuitry of semiconductor negative resistance devices are surveyed. The book challenges the conventional assumptions of tunneling theory and proposes an alternative approach that allows the possibility of a change in energy during tunneling. It also introduces the reader to the manufacture, operation, and applications of semiconductor negative resistance devices. Comprised of five chapters, this volume begins by presenting a logical physical interpretation of the wavefunction with its so-called ill-behaved nature and considering other consequences of the energy distribution effect. The next chapter is devoted to the tunneling effect through tunnel diodes along with other properties of this device. The circuitry and technology of tunnel diodes as well as backward and Zener diodes are then examined, along with negative conductance devices that are used as microwave sources. The final chapter is concerned with negative conductance switching devices. This book is intended for students and practitioners in the fields of physics and electronics.
U. S. Government Research and Development Reports
Bibliography of Scientific and Industrial Reports
Nuclear Science Abstracts
Research in Progress
Technical Abstract Bulletin
Government-wide Index to Federal Research & Development Reports
Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 760
Book Description
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 760
Book Description
Low Temperature Physics-LT 13
Author: K. D. Timmerhaus
Publisher: Springer Science & Business Media
ISBN: 1468426885
Category : Science
Languages : en
Pages : 836
Book Description
The 13th International Conference on Low Temperature Physics, organized by the National Bureau of Standards, Los Alamos Scientific Laboratory, and the University of Colorado, was held in Boulder, Colorado, August 21 to 25, 1972, and was sponsored by the National Science Foundation, the U.S. Army Office of Scientific Research, the U.S. Atomic Energy Commission, the U.S. Navy Office of Naval Research, the International Institute of Refrigeration, and the Internation al Union of Pure and Applied Physics. This international conference was the latest in a series of biennial conferences on low temperature physics, the first of which was held at the Massachusetts Institute of Technology in 1949. (For a complete list of previous L T conferences see p. viii. Many of these past conferences have been coordinated and sponsored by the Commission on Very Low Temperatures of IUPAP. Subsequent LT conferences will be scheduled triennially beginning in 1975. LT 13 was attended by approximately 1015 participants from twenty five countries. Eighteen plenary lectures and 550 contributed papers were presented at the Conference. The Conference began with brief introductory and welcoming remarks by Dr. R.H. Kropschot on behalf of the Organizing Committee, Professor J. Bardeen on behalf of the Commission on Very Low Temperatures of the IUP AP, and Pro fessor O.V. Lounasmaa on behalf of the International Institute of Refrigeration. The eighth London Award was then presented by Professor E.
Publisher: Springer Science & Business Media
ISBN: 1468426885
Category : Science
Languages : en
Pages : 836
Book Description
The 13th International Conference on Low Temperature Physics, organized by the National Bureau of Standards, Los Alamos Scientific Laboratory, and the University of Colorado, was held in Boulder, Colorado, August 21 to 25, 1972, and was sponsored by the National Science Foundation, the U.S. Army Office of Scientific Research, the U.S. Atomic Energy Commission, the U.S. Navy Office of Naval Research, the International Institute of Refrigeration, and the Internation al Union of Pure and Applied Physics. This international conference was the latest in a series of biennial conferences on low temperature physics, the first of which was held at the Massachusetts Institute of Technology in 1949. (For a complete list of previous L T conferences see p. viii. Many of these past conferences have been coordinated and sponsored by the Commission on Very Low Temperatures of IUPAP. Subsequent LT conferences will be scheduled triennially beginning in 1975. LT 13 was attended by approximately 1015 participants from twenty five countries. Eighteen plenary lectures and 550 contributed papers were presented at the Conference. The Conference began with brief introductory and welcoming remarks by Dr. R.H. Kropschot on behalf of the Organizing Committee, Professor J. Bardeen on behalf of the Commission on Very Low Temperatures of the IUP AP, and Pro fessor O.V. Lounasmaa on behalf of the International Institute of Refrigeration. The eighth London Award was then presented by Professor E.
Solvay Conference on Surface Science
Author: Frederick W. de Wette
Publisher: Springer Science & Business Media
ISBN: 3642742181
Category : Science
Languages : en
Pages : 506
Book Description
The articles collected in this volume give a broad overview of the current state of surface science. Pioneers in the field and researchers met together at this Solvay Conference to discuss important new developments in surface science, with an emphasis on the common area between solid state physics and physical chemistry. The contributions deal with the following subjects: structure of surfaces, surface science and catalysis, two-dimensional physics and phase transitions, scanning tunneling microscopy, surface scattering and surface dynamics, chemical reactions at surfaces, solid-solid interfaces and superlattices, and surface studies with synchrotron radiation. On each of these subjects an introductory review talk and a number of short research contributions are followed by extensive discussions, which appear in full in the text. This nineteenth Solvay Conference commemorates the 75th anniversary of the Solvay Institutes.
Publisher: Springer Science & Business Media
ISBN: 3642742181
Category : Science
Languages : en
Pages : 506
Book Description
The articles collected in this volume give a broad overview of the current state of surface science. Pioneers in the field and researchers met together at this Solvay Conference to discuss important new developments in surface science, with an emphasis on the common area between solid state physics and physical chemistry. The contributions deal with the following subjects: structure of surfaces, surface science and catalysis, two-dimensional physics and phase transitions, scanning tunneling microscopy, surface scattering and surface dynamics, chemical reactions at surfaces, solid-solid interfaces and superlattices, and surface studies with synchrotron radiation. On each of these subjects an introductory review talk and a number of short research contributions are followed by extensive discussions, which appear in full in the text. This nineteenth Solvay Conference commemorates the 75th anniversary of the Solvay Institutes.