Author: Arkaprava Bhattacharyya
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659533143
Category :
Languages : en
Pages : 156
Book Description
Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
NQS Effects Investigation For Compact Bipolar Transistor Modeling
Author: Arkaprava Bhattacharyya
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659533143
Category :
Languages : en
Pages : 156
Book Description
Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Publisher: LAP Lambert Academic Publishing
ISBN: 9783659533143
Category :
Languages : en
Pages : 156
Book Description
Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In this work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and results are compared with the published work. Compact modeling with HICUM model is performed with both measured and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Non Quasi-static Effects Investigation for Compact Bipolar Transistor Modeling
Author: Arkaprava Bhattacharyya
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In the current work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and the results are compared with the published work. In popular bipolar model HICUM lateral and vertical NQS are examined separately and uses the same model for both transient and AC operation which requires an additional minimum phase type sub circuit. Compact modeling with HICUM model is performed in both measurement and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Modern high speed (RF) transistors encounter certain delay while operated at high frequency or under fast transient condition. This effect is named as Non Quasi Static (NQS) effect. In the current work, NQS effect is analyzed in a concise manner so that it can be readily implemented in a compact model using the VerilogA description language. The basic physics behind this effect is investigated in small signal domain and the results are compared with the published work. In popular bipolar model HICUM lateral and vertical NQS are examined separately and uses the same model for both transient and AC operation which requires an additional minimum phase type sub circuit. Compact modeling with HICUM model is performed in both measurement and device simulated data. At last, an improved excess phase circuit is proposed to model the NQS effect.
Compact Hierarchical Bipolar Transistor Modeling with Hicum
Author: Michael Schr”ter
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Proceedings of the 1991 Bipolar Circuits and Technology Meeting
Author: Janice Jopke
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN: 9780780301030
Category : Technology & Engineering
Languages : en
Pages : 310
Book Description
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN: 9780780301030
Category : Technology & Engineering
Languages : en
Pages : 310
Book Description
Modeling the Bipolar Transistor
Author: Ian E. Getreu
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 296
Book Description
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 296
Book Description
Compact Modeling
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Investigation of SiGe Heterojunction Bipolar Transistors with Respect to Compact Modelling for Integrated Circuit Design
Compact Modeling of Neutron Damage Effects in a Bipolar Junction Transistor
Author: Teresa B. Gutierrez
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 122
Book Description
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 122
Book Description
Transistor Level Modeling for Analog/RF IC Design
Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 1402045565
Category : Technology & Engineering
Languages : en
Pages : 298
Book Description
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Publisher: Springer Science & Business Media
ISBN: 1402045565
Category : Technology & Engineering
Languages : en
Pages : 298
Book Description
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Investigation of SiGe Heterojunction Bipolar Transistors with Respect to Compact Modelling for Integrated Circuit Design [microform]
Author: Hai Tran
Publisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612270077
Category :
Languages : en
Pages : 264
Book Description
Publisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612270077
Category :
Languages : en
Pages : 264
Book Description