Nonradiative Recombination in Semiconductors PDF Download

Author: V.N. Abakumov
Publisher: Elsevier
ISBN: 0444600825
Category : Science
Languages : en
Pages : 337

View

Book Description
In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.

Author: Govind P. Agrawal
Publisher: Springer Science & Business Media
ISBN: 1461304814
Category : Technology & Engineering
Languages : en
Pages : 630

View

Book Description
Since its invention in 1962, the semiconductor laser has come a long way. Advances in material purity and epitaxial growth techniques have led to a variety of semiconductor lasers covering a wide wavelength range of 0. 3- 100 ~m. The development during the 1970s of GaAs semiconductor lasers, emitting in the near-infrared region of 0. 8-0. 9 ~m, resulted in their use for the first generation of optical fiber communication systems. However, to take advantage oflow losses in silica fibers occurring around 1. 3 and 1. 55 ~m, the emphasis soon shifted toward long-wavelength semiconductor lasers. The material system of choice in this wavelength range has been the quaternary alloy InGaAsP. During the last five years or so, the intense development effort devoted to InGaAsP lasers has resulted in a technology mature enough that lightwave transmission systems using InGaAsP lasers are currently being deployed throughout the world. This book is intended to provide a comprehensive account of long-wave length semiconductor lasers. Particular attention is paid to InGaAsP lasers, although we also consider semiconductor lasers operating at longer wave lengths. The objective is to provide an up-to-date understanding of semicon ductor lasers while incorporating recent research results that are not yet available in the book form. Although InGaAsP lasers are often used as an example, the basic concepts discussed in this text apply to all semiconductor lasers, irrespective of their wavelengths.

Author: Angèle Reinders
Publisher: John Wiley & Sons
ISBN: 111892746X
Category : Technology & Engineering
Languages : en
Pages : 755

View

Book Description
Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.

Author: Jacques I. Pankove
Publisher: Courier Corporation
ISBN: 0486138704
Category : Science
Languages : en
Pages : 466

View

Book Description
Comprehensive text and reference covers all phenomena involving light in semiconductors, emphasizing modern applications in semiconductor lasers, electroluminescence, photodetectors, photoconductors, photoemitters, polarization effects, absorption spectroscopy, more. Numerous problems. 339 illustrations.

Author: Mitsuo Fukuda
Publisher: John Wiley & Sons
ISBN: 9780471149590
Category : Science
Languages : en
Pages : 452

View

Book Description
Eine Einführung in das Gebiet der optoelektronischen pn-Halbleiterbauelemente aus den Blickwinkeln der Materialeigenschaften, der Funktionsprinzipien, der Herstellung und Verpackung, der Zuverlässigkeit und der Anwendung. Das Buch ist für Anfänger gedacht, daher sind die Erläuterungen in geeigneter Weise vereinfacht und theoretische Grundlagen wurden zugunsten anwendungsspezifischer Aspekte zum Teil übersprungen. (12/98)

Author: Zhiming M Wang
Publisher: Springer Science & Business Media
ISBN: 0387741917
Category : Technology & Engineering
Languages : en
Pages : 470

View

Book Description
This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

View

Book Description
In this study, non-radiative recombination plays an important role in the performance of optoelectronic semiconductor devices such as solar cells and light-emitting diodes. Most textbook examples assume that the recombination process occurs through a single defect level, where one electron and one hole are captured and recombined. Based on this simple picture, conventional wisdom is that only defect levels near the center of the bandgap can be effective recombination centers. Here, we present a new two-level recombination mechanism: first, one type of carrier is captured through a defect level forming a metastable state; then the local defect configuration rapidly changes to a stable state, where the other type of carrier is captured and recombined through another defect level. This novel mechanism is applied to the recombination center Te2+cd in CdTe. We show that this two-level process can significantly increase the recombination rate (by three orders of magnitude) in agreement with experiments. We expect that this two-level recombination process can exist in a wide range of semiconductors, so its effect should be carefully examined in characterizing optoelectronic materials.

Author: Sh. Kogan
Publisher: Cambridge University Press
ISBN: 9780521070195
Category : Science
Languages : en
Pages : 376

View

Book Description
This book looks at the physics of electronic fluctuations (noise) in solids. The author emphasizes many fundamental experiments that have become classics: physical mechanisms of fluctuations, and the nature and magnitude of noise. He also includes the most comprehensive and complete review of flicker (1/f) noise in the literature. It will be useful to graduate students and researchers in physics and electronic engineering, and especially those carrying out research in the fields of noise phenomena and highly sensitive electronic devices--detectors, electronic devices for low-noise amplifiers, and quantum magnetometers (SQUIDS).

Author: Hilmi Volkan Demir
Publisher: Cambridge University Press
ISBN: 1107145503
Category : Science
Languages : en
Pages : 453

View

Book Description
An accessible yet rigorous introduction to nanophotonics, covering basic principles, technology, and applications in lighting, lasers, and photovoltaics. Providing a wealth of information on materials and devices, and over 150 color figures, it is the 'go-to' guide for students in electrical engineering taking courses in nanophotonics.

Author: Ivan Pelant
Publisher: OUP Oxford
ISBN: 019162750X
Category : Science
Languages : en
Pages : 557

View

Book Description
This book reviews up-to-date ideas of how the luminescence radiation in semiconductors originates and how to analyze it experimentally. The book fills a gap between general textbooks on optical properties of solids and specialized monographs on luminescence. It is unique in its coherent treatment of the phenomenon of luminescence from the very introductory definitions, from light emission in bulk crystalline and amorphous materials to the advanced chapters that deal with semiconductor nano objects, including spectroscopy of individual nanocrystals. The theory of radiative recombination channels in semiconductors is considered on a level of intuitive physical understanding rather than rigorous quantum mechanical treatment. The book is based on teaching and written in the style of a graduate text with plenty of tutorial material, illustrations, and problem sets at chapter ends. It is designed predominantly for students in physics, optics, optoelectronics and materials science.