Nonlinear Characterization of Microwave Transistors by the Means of Pulsed I(V) and Pulsed S-Parameters Measurements PDF Download
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Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A versatile pulsed I(V) and 40 GHz pulsed S parameters measurement system of microwave transistors is described Capability of discrimination between thermal and trapping effects with a pulse set-up is demonstrated A method to measure electrically the thermal resistance and capacitance of transistors with a pulse set-up is proposed Finally, it is explained how to derive transistor nonlinear characteristics from these measurements for modeling purposes.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
A versatile pulsed I(V) and 40 GHz pulsed S parameters measurement system of microwave transistors is described Capability of discrimination between thermal and trapping effects with a pulse set-up is demonstrated A method to measure electrically the thermal resistance and capacitance of transistors with a pulse set-up is proposed Finally, it is explained how to derive transistor nonlinear characteristics from these measurements for modeling purposes.
Author: Gunter Kompa Publisher: Artech House ISBN: 1630817457 Category : Technology & Engineering Languages : en Pages : 610
Book Description
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: Matthias Rudolph Publisher: Cambridge University Press ISBN: 1139502263 Category : Technology & Engineering Languages : en Pages : 367
Book Description
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author: George D. Vendelin Publisher: John Wiley & Sons ISBN: 0471715824 Category : Technology & Engineering Languages : en Pages : 1080
Book Description
The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
ABSTRACT: Accurate transistor models are important in wireless and microwave circuit design. Large-signal field-effect transistor (FET) models are generally extracted from current-voltage (IV) characteristics, small-signal S-parameters, and large-signal measurements. This dissertation describes improved characterization and measurement validation techniques for FET models that correctly account for thermal and trapping effects. Demonstration of a customized pulsed-bias, pulsed-RF S-parameter system constructed by the author using a traditional vector network analyzer is presented, along with the design of special bias tees to allow pulsing of the bias voltages. Pulsed IV and pulsed-bias S-parameter measurements can provide results that are electrodynamically accurate; that is, thermal and trapping effects in the measurements are similar to those of radio-frequency or microwave operation at a desired quiescent bias point. The custom pulsed S-parameter system is benchmarked using passive devices and advantages and tradeoffs of pulsed S-parameter measurements are explored. Pulsed- and continuous-bias measurement results for a high-power transistor are used to validate thermal S-parameter correction procedures. A new implementation of the steepest-ascent search algorithm for load-pull is presented. This algorithm provides for high-resolution determination of the maximum power and associated load impedance using a small number of measured or simulated reflection-coefficient states. To perform a more thorough nonlinear model validation, it is often desired to find the impedance providing maximum output power or efficiency over variations of a parameter such as drain voltage, input power, or process variation. The new algorithm enables this type of validation that is otherwise extremely tedious or impractical with traditional load-pull. A modified nonlinear FET model is presented in this work that allows characterization of both thermal and trapping effects. New parameters and equation terms providing a trapping-related quiescent-bias dependence have been added to a popular nonlinear ("Angelov") model. A systematic method for fitting the quiescent-dependence parameters, temperature coefficients, and thermal resistance is presented, using a GaN high electron-mobility transistor as an example. The thermal resistance providing a good fit in the modeling procedure is shown to correspond well with infrared measurement results.
Author: Iltcho Angelov Publisher: Elsevier Inc. Chapters ISBN: 0128068590 Category : Technology & Engineering Languages : en Pages : 59
Book Description
Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear circuits, such as power amplifiers or mixers. Among the existing modeling techniques, measurement-based approaches have gained huge attention from researchers in the last decades. Especially, nonlinear measurements-driven model extraction is preferred for transistors exploited in the design of power amplifiers and mixers. This chapter mainly deals with the generation of empirical transistor models starting from large-signal time-domain waveforms. Specifically, a widely used model available in commercial CAD tools is adopted, and the extraction procedure of the model parameters is outlined in detail. Moreover the advantage of using time-domain waveforms at different frequencies is highlighted. More specifically, by making use of time-domain waveforms at frequencies in the kHz-MHz range, one can separately model the behavior of the transistor output current generator, which is more prone to low-frequency dispersive effects. In fact at low frequencies the effect of the nonlinear transistor capacitance is significantly reduced and, therefore, already “de-embedded” from the measured time-domain waveforms. Once the model of the output current generator is available, one can use high-frequency measurements to determine the nonlinear capacitances (or charges). Several modeling examples of different transistor technologies, such as gallium-arsenide and gallium-nitride, are reported.
Author: Inder Bahl Publisher: John Wiley & Sons ISBN: 9780470462317 Category : Technology & Engineering Languages : en Pages : 696
Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
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Author: Gunter Kompa
Author: Matthias Rudolph
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Author: George D. Vendelin
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Author: Iltcho Angelov
Author: Inder Bahl