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Author: JAMES EDWIN KING Publisher: ISBN: Category : Languages : en Pages : 357
Book Description
The purpose of this study is to investigate wave propagation in semiconductors in order to predict bulk wave instabilities and to compare them with experimental results. Improvement upon the accuracy of previous analyses is obtained by considering models which correspond to specific semiconductors and by including in the models effects of band structure and the energy dependent phonon scattering appropriate to the type of semiconductor. In addition, high electric field effects are included by considering not only the continuity equation and momentum transport equations but also the energy transport equation, which leads to a small-signal, nonisothermal analysis and allows calculation of the carrier temperatures. The model that is characteristic of III-V semiconductors was chosen to represent indium antimonide. Isotropic holes and electrons, and energy dependent polar optical phonon and acoustic phonon scattering, are considered. Both the energy and momentum scattering terms for both types are obtained to nth order as functions of carrier velocity and temperature. The energy dependence of the scattering terms is reflected in the conductivities, both static and perturbed, which are evaluated by a small-signal analysis of the continuity and transport equations for each band. The conductivities are added tensorially to give the total conductivity which is combined with Maxwell's equations to obtain the dispersion equations.
Author: JAMES EDWIN KING Publisher: ISBN: Category : Languages : en Pages : 357
Book Description
The purpose of this study is to investigate wave propagation in semiconductors in order to predict bulk wave instabilities and to compare them with experimental results. Improvement upon the accuracy of previous analyses is obtained by considering models which correspond to specific semiconductors and by including in the models effects of band structure and the energy dependent phonon scattering appropriate to the type of semiconductor. In addition, high electric field effects are included by considering not only the continuity equation and momentum transport equations but also the energy transport equation, which leads to a small-signal, nonisothermal analysis and allows calculation of the carrier temperatures. The model that is characteristic of III-V semiconductors was chosen to represent indium antimonide. Isotropic holes and electrons, and energy dependent polar optical phonon and acoustic phonon scattering, are considered. Both the energy and momentum scattering terms for both types are obtained to nth order as functions of carrier velocity and temperature. The energy dependence of the scattering terms is reflected in the conductivities, both static and perturbed, which are evaluated by a small-signal analysis of the continuity and transport equations for each band. The conductivities are added tensorially to give the total conductivity which is combined with Maxwell's equations to obtain the dispersion equations.
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division Publisher: ISBN: Category : Aeronautics Languages : en Pages : 962
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division Publisher: ISBN: Category : Aeronautics Languages : en Pages : 966
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division Publisher: ISBN: Category : Science Languages : en Pages : 956
Author: JAMES EDWIN KING
Author: JAMES EDWIN KING
Author: 
Author: Defense Documentation Center (U.S.)
Author: University of Michigan. Board of Regents
Author: Pierre Léopold Guéret
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Author: University of Michigan. Office of Research Administration
Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Author: