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Author: Hao Yu Publisher: Springer Nature ISBN: 3031020324 Category : Technology & Engineering Languages : en Pages : 147
Book Description
Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.
Author: Hao Yu Publisher: Springer Nature ISBN: 3031020324 Category : Technology & Engineering Languages : en Pages : 147
Book Description
Exa-scale computing needs to re-examine the existing hardware platform that can support intensive data-oriented computing. Since the main bottleneck is from memory, we aim to develop an energy-efficient in-memory computing platform in this book. First, the models of spin-transfer torque magnetic tunnel junction and racetrack memory are presented. Next, we show that the spintronics could be a candidate for future data-oriented computing for storage, logic, and interconnect. As a result, by utilizing spintronics, in-memory-based computing has been applied for data encryption and machine learning. The implementations of in-memory AES, Simon cipher, as well as interconnect are explained in details. In addition, in-memory-based machine learning and face recognition are also illustrated in this book.
Author: Weisheng Zhao Publisher: Springer ISBN: 3319151800 Category : Technology & Engineering Languages : en Pages : 259
Book Description
This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.
Author: Wen Siang Lew Publisher: ISBN: 9789811569111 Category : Languages : en Pages : 0
Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Wen Siang Lew Publisher: Springer Nature ISBN: 9811569126 Category : Science Languages : en Pages : 439
Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Takayuki Kawahara Publisher: Springer Science & Business Media ISBN: 1461408113 Category : Computers Languages : en Pages : 214
Book Description
This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.
Author: Kawsher A. Roxy Publisher: ISBN: 9781680833638 Category : Computer engineering Languages : en Pages : 123
Book Description
In addition to the electron's charge, spintronics deals with the electron's spin and magnetic moment for computation or data storage. Certainly, an extremely promising application of spintronic devices is datastorage; the remanence makes the memory non-volatile and instant-on. Moreover, these devices are thermally stable making them suitable for extreme-temperature operations. In this monograph, we leverage spintronic devices for information processing and do not cover data-storage. We explore three non- Boolean computational framework: (1) Energy minimization based optimizer, which we recently published in Nature Nanotechnology [23], (2) Coupled Oscillatory framework [47] and (3) Neuromorphic learning framework. In Energy minimization framework, we harness the innate physical properties of nanomagnets to directly solve a class of energy minimization problems. Due to the fact that the Hamiltonian of a system of coupled nanomagnets is quadratic, a wide class of quadratic energy minimization can be solved much more quickly by the relaxation of a grid of nanomagnets than by a conventional Boolean processor. Another property that researchers have harnessed is achieving radio-frequency ferromagnetic resonance, which can be harnessed in a system of nano-oscillators to provide solution to dynamical systems. This property is also utilized in neuromorphic frameworks.
Author: Yoshio Nishi Publisher: Woodhead Publishing ISBN: 0081025858 Category : Science Languages : en Pages : 662
Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Jayasimha Atulasimha Publisher: John Wiley & Sons ISBN: 1118869265 Category : Technology & Engineering Languages : en Pages : 356
Book Description
Nanomagnetic and spintronic computing devices are strong contenders for future replacements of CMOS. This is an important and rapidly evolving area with the semiconductor industry investing significantly in the study of nanomagnetic phenomena and in developing strategies to pinpoint and regulate nanomagnetic reliably with a high degree of energy efficiency. This timely book explores the recent and on-going research into nanomagnetic-based technology. Key features: Detailed background material and comprehensive descriptions of the current state-of-the-art research on each topic. Focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing. Discusses spin-based devices where the spin degree of freedom of charge carriers are exploited for device operation and ultimately information processing. Describes magnet switching methodologies to minimize energy dissipation. Comprehensive bibliographies included for each chapter enabling readers to conduct further research in this field. Written by internationally recognized experts, this book provides an overview of a rapidly burgeoning field for electronic device engineers, field-based applied physicists, material scientists and nanotechnologists. Furthermore, its clear and concise form equips readers with the basic understanding required to comprehend the present stage of development and to be able to contribute to future development. Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing is also an indispensable resource for students and researchers interested in computer hardware, device physics and circuits design.
Author: Saeideh Shirinzadeh Publisher: Springer ISBN: 3030180263 Category : Technology & Engineering Languages : en Pages : 115
Book Description
This book describes a comprehensive approach for synthesis and optimization of logic-in-memory computing hardware and architectures using memristive devices, which creates a firm foundation for practical applications. Readers will get familiar with a new generation of computer architectures that potentially can perform faster, as the necessity for communication between the processor and memory is surpassed. The discussion includes various synthesis methodologies and optimization algorithms targeting implementation cost metrics including latency and area overhead as well as the reliability issue caused by short memory lifetime. Presents a comprehensive synthesis flow for the emerging field of logic-in-memory computing; Describes automated compilation of programmable logic-in-memory computer architectures; Includes several effective optimization algorithm also applicable to classical logic synthesis; Investigates unbalanced write traffic in logic-in-memory architectures and describes wear leveling approaches to alleviate it.
Author: Hao Yu
Author: Hao Yu
Author: Weisheng Zhao
Author: Wen Siang Lew
Author: Wen Siang Lew
Author: Takayuki Kawahara
Author: Debanjan Bhowmik
Author: Kawsher A. Roxy
Author: Yoshio Nishi
Author: Jayasimha Atulasimha
Author: Saeideh Shirinzadeh