Non-Stoichiometric Oxides of 3d Metals. Concentration and Mobility of Electronic and Ionic Defects. PDF Download
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Author: Andrzej Stokłosa Publisher: Trans Tech Publications Ltd ISBN: 3036415424 Category : Science Languages : en Pages : 485
Book Description
The advancement of material engineering over the last few decades has allowed for the development of modern metallic and ceramic construction materials, composites, nanomaterials and various kinds of coatings with desired performance characteristics. They form the basis for the development of the automotive industry, the aviation industry, the chemical equipment industry, etc. They can function in ever higher temperatures and aggressive environments. On the other hand, the advancement of electronics requires the development of new and cheaper materials: semiconductors, insulators, materials with magnetic, ferrimagnetic or piezoelectric properties, etc. The desired properties of materials or their surface layers depend on chemical composition, dopants, and the concentration of point defects, through which the transport of ions and electrons takes place. The functional properties also depend on the nuances of production technologies which allow to obtain a specific texture and a desired concentration of ionic and electronic point defects. The monograph follows up on the issues related to the concentration of charge carriers in pure and doped oxides. Based on the diagrams of the concentration of point defects, the calculation results of the concentration of charge carriers and their mobility are presented, using the results of the studies on the electrical conductivity and the thermoelectric power in some specific oxides of 3d metals. In turn, the results of calculations of the ionic defect diffusion coefficients, conducted using the coefficients of self-diffusion and chemical diffusion as well as the concentration of ionic defects in these oxides, are presented. The given material will be useful to a wide range of researchers and developers of new materials with a wide range of required properties.
Author: Andrzej Stokłosa Publisher: Trans Tech Publications Ltd ISBN: 3036415424 Category : Science Languages : en Pages : 485
Book Description
The advancement of material engineering over the last few decades has allowed for the development of modern metallic and ceramic construction materials, composites, nanomaterials and various kinds of coatings with desired performance characteristics. They form the basis for the development of the automotive industry, the aviation industry, the chemical equipment industry, etc. They can function in ever higher temperatures and aggressive environments. On the other hand, the advancement of electronics requires the development of new and cheaper materials: semiconductors, insulators, materials with magnetic, ferrimagnetic or piezoelectric properties, etc. The desired properties of materials or their surface layers depend on chemical composition, dopants, and the concentration of point defects, through which the transport of ions and electrons takes place. The functional properties also depend on the nuances of production technologies which allow to obtain a specific texture and a desired concentration of ionic and electronic point defects. The monograph follows up on the issues related to the concentration of charge carriers in pure and doped oxides. Based on the diagrams of the concentration of point defects, the calculation results of the concentration of charge carriers and their mobility are presented, using the results of the studies on the electrical conductivity and the thermoelectric power in some specific oxides of 3d metals. In turn, the results of calculations of the ionic defect diffusion coefficients, conducted using the coefficients of self-diffusion and chemical diffusion as well as the concentration of ionic defects in these oxides, are presented. The given material will be useful to a wide range of researchers and developers of new materials with a wide range of required properties.
Author: Andrzej Stokłosa Publisher: Trans Tech Publications Ltd ISBN: 3038266086 Category : Technology & Engineering Languages : en Pages : 577
Book Description
In the present work, in Part I, new elements widening the bases of the defects theory are shown; particularly, this work discusses the mechanism of the formation of defects as a result of elementary processes; the work also presents a description of the equilibrium state by one equation, taking into account the concentrations of defects and their changes during the process of reaching the equilibrium. The equation relates the concentrations of defects, dependent on the standard Gibbs energies of their formation, with the equilibrium pressure of oxygen. The obtained relations and the discussion have lead to the development of a method for determination of complete diagrams of concentrations of the point defects, which allows taking into account the minority defects. Part II presents the results of the calculations of the diagrams of point defects’ concentrations for a series of pure and doped oxides of transition metals 3d, with different composition (M/O ratio), crystallographic structure and point defects’ structure. A critical analysis of the results of the studies of the deviation from the stoichiometry and the electrical conductivity, obtained (so far) by most research groups has been also performed. A new interpretation of these results, concerning concentrations and types of ionic defects present has been performed and the mobility of electronic defects and its dependence on the temperature and oxygen pressure have been determined.
Author: Hideo Hosono Publisher: John Wiley & Sons ISBN: 1119715652 Category : Technology & Engineering Languages : en Pages : 644
Book Description
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
Author: Jacques C. Vedrine Publisher: Elsevier ISBN: 0128116323 Category : Technology & Engineering Languages : en Pages : 620
Book Description
Metal Oxides in Heterogeneous Catalysis is an overview of the past, present and future of heterogeneous catalysis using metal oxides catalysts. The book presents the historical, theoretical, and practical aspects of metal oxide-based heterogeneous catalysis. Metal Oxides in Heterogeneous Catalysis deals with fundamental information on heterogeneous catalysis, including reaction mechanisms and kinetics approaches.There is also a focus on the classification of metal oxides used as catalysts, preparation methods and touches on zeolites, mesoporous materials and Metal-organic frameworks (MOFs) in catalysis. It will touch on acid or base-type reactions, selective (partial) and total oxidation reactions, and enzymatic type reactions The book also touches heavily on the biomass applications of metal oxide catalysts and environmentally related/depollution reactions such as COVs elimination, DeNOx, and DeSOx. Finally, the book also deals with future trends and prospects in metal oxide-based heterogeneous catalysis. - Presents case studies in each chapter that provide a focus on the industrial applications - Includes fundamentals, key theories and practical applications of metal oxide-based heterogeneous catalysis in one comprehensive resource - Edited, and contributed, by leading experts who provide perspectives on synthesis, characterization and applications
Author: Richard J. D. Tilley Publisher: John Wiley & Sons ISBN: 047038073X Category : Science Languages : en Pages : 549
Book Description
Provides a thorough understanding of the chemistry and physics of defects, enabling the reader to manipulate them in the engineering of materials. Reinforces theoretical concepts by placing emphasis on real world processes and applications. Includes two kinds of end-of-chapter problems: multiple choice (to test knowledge of terms and principles) and more extensive exercises and calculations (to build skills and understanding). Supplementary material on crystallography and band structure are included in separate appendices.
Author: Jacques Jupille Publisher: Springer ISBN: 3319143670 Category : Science Languages : en Pages : 472
Book Description
This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties have yet to be developed. The book gives guidance to tailor oxide surfaces by controlling the nature and concentration of defects. The importance of defects in the physics and chemistry of metal oxide surfaces is presented in this book together with the prominent role of oxides in common life. The book contains contributions from leaders in the field. It serves as a reference for experts and beginners in the field.
Author: Babak Anasori Publisher: Springer Nature ISBN: 3030190269 Category : Technology & Engineering Languages : en Pages : 530
Book Description
This book describes the rapidly expanding field of two-dimensional (2D) transition metal carbides and nitrides (MXenes). It covers fundamental knowledge on synthesis, structure, and properties of these new materials, and a description of their processing, scale-up and emerging applications. The ways in which the quickly expanding family of MXenes can outperform other novel nanomaterials in a variety of applications, spanning from energy storage and conversion to electronics; from water science to transportation; and in defense and medical applications, are discussed in detail.
Author: Andrzej Stokłosa
Author: Andrzej Stokłosa
Author: Chintamani Nagesa Ramachandra Rao
Author: Andrzej Stokłosa
Author: Hideo Hosono
Author: Jacques C. Vedrine
Author: Richard J. D. Tilley
Author: J. B. Wachtman
Author: 
Author: Jacques Jupille
Author: Babak Anasori