Investigation of Co and Ni Silicide Contacts to Si PDF Download

Author: Anthony J. Canale
Publisher:
ISBN:
Category :
Languages : en
Pages : 196

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Author: Mike El Kousseifi
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
This thesis focuses on the phenomena that occur during the reaction between metal and silicon (silicide) on thin films and nanowires. Indeed, phenomena such as nucleation, lateral growth, normal growth and diffusion must be understood to make contacts for future microelectronic devices. The comparison between the silicide formation on thin films and nanowires is one of the main aspects of this work. Atomic distribution in 3D for the elements in different Ni silicide phase was obtained by atom probe tomography (APT). To enable the analysis of different types of silicon nanowires by APT, several original methods for sample preparation by focused ion beam has been developed and tested. On the other hand, in situ and real-time analysis by X-ray diffraction during the reactive diffusion helped to highlight the importance of the nucleation of a phase and to determine the kinetics of formation of Ni(Pt) silicides, including the reaction on the interfaces and the lateral growth. The characteristic shape associated with the lateral growth was determined by ex-situ transmission electron microscopy analyzes and was compared with the existing theoretical models. Moreover, the determination of the fastest diffusing species by APT provided information on the mechanisms of phase formation and stress relaxation in the silicide.

Author: Ender Hökelek
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 146

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Author: Konstantinos Zekentes
Publisher: Materials Research Forum LLC
ISBN: 1945291842
Category : Technology & Engineering
Languages : en
Pages : 250

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Book Description
The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.

Author: Nicholas S. Dellas
Publisher:
ISBN:
Category :
Languages : en
Pages : 163

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Author: Zhe Chuan Feng
Publisher: Springer Science & Business Media
ISBN: 9783540206668
Category : Science
Languages : en
Pages : 480

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Book Description
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.

Author: Institution of Electrical Engineers
Publisher: IET
ISBN: 9780863413520
Category : Social Science
Languages : en
Pages : 302

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Book Description
This is the first book to provide guidance on the development and application of metal silicide technology as it emerges from the scientific to the prototype and manufacturing stages. Other key topics covered are fundamentals, present and future silicide technology for Si-based devices, and characterisation methods. Suitable for engineers and students in microelectronics.

Author: Yu Huang
Publisher: CRC Press
ISBN: 981430347X
Category : Science
Languages : en
Pages : 472

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Book Description
Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Author:
Publisher: ScholarlyEditions
ISBN: 1481692380
Category : Science
Languages : en
Pages : 810

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Book Description
Silicon Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Silanes. The editors have built Silicon Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Silanes in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Silicon Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Author: Michael Shur
Publisher: World Scientific
ISBN: 9812773371
Category : Technology & Engineering
Languages : en
Pages : 342

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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."