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Author: Brajesh Kumar Kaushik Publisher: Springer ISBN: 981102720X Category : Technology & Engineering Languages : en Pages : 107
Book Description
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Author: Brajesh Kumar Kaushik Publisher: Springer ISBN: 981102720X Category : Technology & Engineering Languages : en Pages : 107
Book Description
This book offers detailed insights into spin transfer torque (STT) based devices, circuits and memories. Starting with the basic concepts and device physics, it then addresses advanced STT applications and discusses the outlook for this cutting-edge technology. It also describes the architectures, performance parameters, fabrication, and the prospects of STT based devices. Further, moving from the device to the system perspective it presents a non-volatile computing architecture composed of STT based magneto-resistive and all-spin logic devices and demonstrates that efficient STT based magneto-resistive and all-spin logic devices can turn the dream of instant on/off non-volatile computing into reality.
Author: Rohit Dhiman Publisher: CRC Press ISBN: 1000778061 Category : Technology & Engineering Languages : en Pages : 255
Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Author: Katsuaki Sato Publisher: John Wiley & Sons ISBN: 1118751914 Category : Technology & Engineering Languages : en Pages : 275
Book Description
Spintronics (short for spin electronics, or spin transport electronics) exploits both the intrinsic spin of the electron and its associated magnetic moment, in addition to its fundamental electronic charge, in solid-state devices. Controlling the spin of electrons within a device can produce surprising and substantial changes in its properties. Drawing from many cutting edge fields, including physics, materials science, and electronics device technology, spintronics has provided the key concepts for many next generation information processing and transmitting technologies. This book discusses all aspects of spintronics from basic science to applications and covers: • magnetic semiconductors • topological insulators • spin current science • spin caloritronics • ultrafast magnetization reversal • magneto-resistance effects and devices • spin transistors • quantum information devices This book provides a comprehensive introduction to Spintronics for researchers and students in academia and industry.
Author: Naveen Muralimanohar Publisher: Springer Nature ISBN: 3031017358 Category : Technology & Engineering Languages : en Pages : 122
Book Description
As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories
Author: Rasit O. Topaloglu Publisher: Springer ISBN: 1493921630 Category : Technology & Engineering Languages : en Pages : 225
Book Description
This book provides a comprehensive overview of key technologies being used to address challenges raised by continued device scaling and the extending gap between memory and central processing unit performance. Authors discuss in detail what are known commonly as “More than Moore” (MtM), technologies, which add value to devices by incorporating functionalities that do not necessarily scale according to “Moore's Law”. Coverage focuses on three key technologies needed for efficient power management and cost per performance: novel memories, 3D integration and photonic on-chip interconnect.
Author: Jayasimha Atulasimha Publisher: John Wiley & Sons ISBN: 1118869257 Category : Technology & Engineering Languages : en Pages : 352
Book Description
Nanomagnetic and spintronic computing devices are strong contenders for future replacements of CMOS. This is an important and rapidly evolving area with the semiconductor industry investing significantly in the study of nanomagnetic phenomena and in developing strategies to pinpoint and regulate nanomagnetic reliably with a high degree of energy efficiency. This timely book explores the recent and on-going research into nanomagnetic-based technology. Key features: Detailed background material and comprehensive descriptions of the current state-of-the-art research on each topic. Focuses on direct applications to devices that have potential to replace CMOS devices for computing applications such as memory, logic and higher order information processing. Discusses spin-based devices where the spin degree of freedom of charge carriers are exploited for device operation and ultimately information processing. Describes magnet switching methodologies to minimize energy dissipation. Comprehensive bibliographies included for each chapter enabling readers to conduct further research in this field. Written by internationally recognized experts, this book provides an overview of a rapidly burgeoning field for electronic device engineers, field-based applied physicists, material scientists and nanotechnologists. Furthermore, its clear and concise form equips readers with the basic understanding required to comprehend the present stage of development and to be able to contribute to future development. Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing is also an indispensable resource for students and researchers interested in computer hardware, device physics and circuits design.
Author: Evgeny Y. Tsymbal Publisher: CRC Press ISBN: 1439803781 Category : Science Languages : en Pages : 797
Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Author: Ye Zhou Publisher: Royal Society of Chemistry ISBN: 1839169958 Category : Technology & Engineering Languages : en Pages : 641
Book Description
Advanced memory technologies are impacting the information era, representing a vibrant research area of huge interest in the electronics industry. The demand for data storage, computing performance and energy efficiency is increasing exponentially and will exceed the capabilities of current information technologies. Alternatives to traditional silicon technology and novel memory principles are expected to meet the need of modern data-intensive applications such as “big data” and artificial intelligence (AI). Functional materials or methodologies may find a key role in building novel, high speed and low power consumption computing and data storage systems. This book covers functional materials and devices in the data storage areas, alongside electronic devices with new possibilities for future computing, from neuromorphic next generation AI to in-memory computing. Summarizing different memory materials and devices to emphasize the future applications, graduate students and researchers can systematically learn and understand the design, materials characteristics, device operation principles, specialized device applications and mechanisms of the latest reported memory materials and devices.
Author: Roberto Gastaldi Publisher: Springer ISBN: 3319477242 Category : Technology & Engineering Languages : en Pages : 261
Book Description
This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.
Author: Brajesh Kumar Kaushik
Author: Brajesh Kumar Kaushik
Author: Rohit Dhiman
Author: S. Shingubara
Author: Katsuaki Sato
Author: Naveen Muralimanohar
Author: Rasit O. Topaloglu
Author: Jayasimha Atulasimha
Author: Evgeny Y. Tsymbal
Author: Ye Zhou
Author: Roberto Gastaldi