Author: Claudio Ronald Miskys
Publisher:
ISBN:
Category :
Languages : en
Pages : 207

View

Book Description

Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category : Technology & Engineering
Languages : en
Pages : 442

View

Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a

Author: Jonny Tot
Publisher:
ISBN:
Category :
Languages : en
Pages :

View

Book Description
Chapter 1 serves as an introduction to the electronic, optical and physical properties of the nitride material system that have made it a heavily researched group of semiconductors. The need for heteroepitaxy and various commercially successful substrates will be discussed along with the motivation of this thesis. Some general history will be provided as well as the challenges faced by these materials in commercialization. Chapter 2 will focus on current and past growth techniques used for nitrides, outlining how epitaxy occurs in these systems with their respective benefits and faults. Chapter 3 will give an overview on the characterization tools used throughout this research. An understanding of how these tools operate will assist in interpreting data correctly. Combined with knowledge from chapter 2 it may also give insight on what needs to change about growth conditions to optimize growth. Chapter 4 will present the growth results from various characterization tools discussed in chapter 3. Conclusions about the data from each material system will be discussed. Chapter 5 will focus on theoretical calculations for InN. Initial results for InN show it to be the most promising material. A theoretical analysis of common impurities on the electronic band structure of InN will help in interpreting optical properties of the material. The central research contributions of the author in this thesis can be summarized as the development of III-Nitrides growth recipes for each material, characterization of the results, and the application of LCAO theory to the InN system for common impurities found in the growth technique examined.

Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602

View

Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Author: Choudhury J. Praharaj
Publisher: John Wiley & Sons
ISBN: 111970863X
Category : Technology & Engineering
Languages : en
Pages : 196

View

Book Description
Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.

Author: Rongming Chu
Publisher: Academic Press
ISBN: 0128175443
Category : Electronic apparatus and appliances
Languages : en
Pages : 540

View

Book Description
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Author:
Publisher:
ISBN: 9780198501596
Category :
Languages : en
Pages : 690

View

Book Description

Author: Rositsa Gergova
Publisher:
ISBN:
Category : Afterglow (Physics)
Languages : en
Pages : 298

View

Book Description
"The work presented in this thesis investigates the growth and properties of group III- nitride semiconductors that were grown using the Migration Enhanced Afterglow Epitaxy (MEAglow) method. This work was to enhance the understanding of the MEAglow growth process towards the improvement of quality of the layers grown using this technique. The MEAglow technique applies the migration enhanced epitaxy method in a low pressure plasma-based CVD reactor, which has a potential of producing high quality epitaxial group III-nitride layers at relatively low growth temperatures on large deposition areas. The low temperature pulse growth in metal-rich regime, comprising the MME method was employed under growth pressures between 500 mTorr and 3000 mTorr. As the MME method up to this point has been used only for MBE systems, study of the impact of the growth pressure on the materials properties was necessary. In this work the pressure dependence was mapped to an existing surface phase diagram for MBE systems by calculating the number of nitrogen gas phase collisions and the metalorganic bombardment rate, for the specific to the prototype reactor parameters, to a first approximation. This was done in order to achieve an intermediate regime free of metal droplets for growth in metal-rich regime. High quality epitaxial InN layers were accomplished on extremely thin and smooth Ga2O3 buffer layers. These results indicate a potential for the application of Ga2O3 buffers in InN growth. The MEAglow InN layers were further optimized for growth on commercially available GaN buffer layers and excellent two-dimensional growth was achieved for layers grown under metal-rich conditions at 512 °C. Post-growth annealing studies were carried out for InN layers grown at temperatures below 400 °C to study the limiting processes of the removal of excess nitrogen, believed to be a dominant defect in InN films grown in plasma-based systems at very low temperatures. Variations in GaN stoichiometry under certain growth conditions and the effect of similar growth conditions on MEAglow grown InGaN were also examined. The growth of MEAglow InGaN samples on sapphire substrates was optimized to reduce the indium surface segregation and phase separation of the material."-- from abstract.

Author: Takashi Matsuoka
Publisher: Springer
ISBN: 3319766414
Category : Technology & Engineering
Languages : en
Pages : 228

View

Book Description
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1848162235
Category : Technology & Engineering
Languages : en
Pages : 477

View

Book Description
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.