Author: Edward B. StokesPublisher: The Electrochemical Society
ISBN: 9781566773492
Category : Technology & Engineering
Languages : en
Pages : 292
Book Description
State-of-the-Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III
Author: Edward B. StokesPublisher: The Electrochemical Society
ISBN: 9781566773492
Category : Technology & Engineering
Languages : en
Pages : 292
Book Description
Scientific and Technical Aerospace Reports
Author: Proceedings of the 3rd International Winter Workshop on Spectroscopy and Structure of Rare Earth Systems
Author: Publisher:
ISBN:
Category : Rare earth metal compounds
Languages : en
Pages : 890
Book Description
Chemical Abstracts
Author: Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 782
Book Description
Ceramic Abstracts
Author: International Aerospace Abstracts
Author: Microscopy of Semiconducting Materials 2003
Author: A.G. CullisPublisher: CRC Press
ISBN: 1351083082
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
GaN and Related Alloys - 1999: Volume 595
Author: Thomas H. MyersPublisher:
ISBN:
Category : Science
Languages : en
Pages : 1070
Book Description
This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.
Electrical & Electronics Abstracts
Author: Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
Book Description