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Amorphous Oxide Semiconductors

Amorphous Oxide Semiconductors PDF Author: Hideo Hosono
Publisher: John Wiley & Sons
ISBN: 1119715652
Category : Technology & Engineering
Languages : en
Pages : 644

Book Description
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Amorphous Oxide Semiconductors

Amorphous Oxide Semiconductors PDF Author: Hideo Hosono
Publisher: John Wiley & Sons
ISBN: 1119715652
Category : Technology & Engineering
Languages : en
Pages : 644

Book Description
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO

Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO PDF Author: Shunpei Yamazaki
Publisher: John Wiley & Sons
ISBN: 1119247349
Category : Technology & Engineering
Languages : en
Pages : 377

Book Description
This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.

Technological Innovation for Cyber-Physical Systems

Technological Innovation for Cyber-Physical Systems PDF Author: Luis M. Camarinha-Matos
Publisher: Springer
ISBN: 9783319311647
Category : Computers
Languages : en
Pages : 0

Book Description
This book constitutes the refereed proceedings of the 7th IFIP WG 5.5/SOCOLNET Advanced Doctoral Conference on Computing, Electrical and Industrial Systems, DoCEIS 2016, held in Costa de Caparica, Portugal, in April 2016. The 53 revised full papers were carefully reviewed and selected from 112 submissions. The papers present selected results produced in engineering doctoral programs and focus on research, development, and application of cyber-physical systems. Research results and ongoing work are presented, illustrated and discussed in the following areas: enterprise collaborative networks; ontologies; Petri nets; manufacturing systems; biomedical applications; intelligent environments; control and fault tolerance; optimization and decision support; wireless technologies; energy: smart grids, renewables, management, and optimization; bio-energy; and electronics.

Zinc Compounds—Advances in Research and Application: 2013 Edition

Zinc Compounds—Advances in Research and Application: 2013 Edition PDF Author:
Publisher: ScholarlyEditions
ISBN: 1481693476
Category : Science
Languages : en
Pages : 884

Book Description
Zinc Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Zinc Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Zinc Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Thin Film Transistors 12 (TFT 12)

Thin Film Transistors 12 (TFT 12) PDF Author: Y. Kuo
Publisher: The Electrochemical Society
ISBN: 1607685477
Category :
Languages : en
Pages : 204

Book Description


Oxide Semiconductors: Volume 1633

Oxide Semiconductors: Volume 1633 PDF Author: Steve Durbin
Publisher: Materials Research Society
ISBN: 9781605116105
Category : Technology & Engineering
Languages : en
Pages : 0

Book Description
Symposium R, "Oxide Semiconductors" was held December 1-6 at the 2013 MRS Fall Meeting in Boston, Massachusetts. Oxide semiconductors are poised to take a more active role in modern electronics, particularly in the field of thin film transistors. While many advances have been made in terms of our understanding of fundamental optical and electronic characteristics, there remain many questions in terms of defects, doping, and optimal growth/synthesis conditions. This symposium proceedings volume represents recent advances in growth and characterization of a number of different oxide semiconductors, as well as device fabrication.

Aluminum Compounds—Advances in Research and Application: 2012 Edition

Aluminum Compounds—Advances in Research and Application: 2012 Edition PDF Author:
Publisher: ScholarlyEditions
ISBN: 1481601989
Category : Science
Languages : en
Pages : 111

Book Description
Aluminum Compounds—Advances in Research and Application: 2012 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Aluminum Compounds. The editors have built Aluminum Compounds—Advances in Research and Application: 2012 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Aluminum Compounds in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Aluminum Compounds—Advances in Research and Application: 2012 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Proceedings of Fifth International Conference on Inventive Material Science Applications

Proceedings of Fifth International Conference on Inventive Material Science Applications PDF Author: V. Bindhu
Publisher: Springer Nature
ISBN: 9811943044
Category : Technology & Engineering
Languages : en
Pages : 296

Book Description
The book is a collection of best selected research papers presented at the 5th International Conference on Inventive Material Science Applications (ICIMA 2022) organized by PPG Institute of Technology, Coimbatore, India, during May 6–7, 2022. The book includes original research by material science researchers toward developing a compact and efficient functional elements and structures for micro-, nano-, and optoelectronic applications. The book covers important topics like nanomaterials and devices, optoelectronics, sustainable electronic materials, nanocomposites and nanostructures, hybrid electronic materials, medical electronics, computational material science, wearable electronic devices and models, and optical/nanosensors.

A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs

A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs PDF Author: Ana Paula Pinto Correia
Publisher: Springer
ISBN: 331927192X
Category : Technology & Engineering
Languages : en
Pages : 86

Book Description
This books discusses the design, electrical simulation and layout of a 2nd-order ∑∆ analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates.

Nanowires

Nanowires PDF Author: Xihong Peng
Publisher: BoD – Books on Demand
ISBN: 1839623918
Category : Technology & Engineering
Languages : en
Pages : 200

Book Description
Low-dimensional structures have attracted extensive research interest due to their promising applications in nanotechnology. These low-dimensional materials have the potential to make revolutionary changes in science and technology because a reduction in size not only enables a faster speed and greater computing power but also helps reduce device form factors. As such, this book examines the behaviors of oxide nanowires, group III–V compounds, and other nanowires, including basic Si nanowires, metallic wires, and complex geometrical nanowires.