Author: Norbert SchulzePublisher:
ISBN: 9783826592102
Category :
Languages : en
Pages : 121
Book Description
Near Thermal Equilibrium Growth of 4H-, 6H-, and 15R-silicon Carbide Single Crystals
Author: Norbert SchulzePublisher:
ISBN: 9783826592102
Category :
Languages : en
Pages : 121
Book Description
Silicon Carbide and Related Materials 2011
Author: Robert P. DevatyPublisher: Trans Tech Publications Ltd
ISBN: 3038138339
Category : Technology & Engineering
Languages : en
Pages : 1500
Book Description
ICSCRM 2011 Selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA
Silicon Carbide and Related Materials--1999
Author: Calvin H. CarterPublisher:
ISBN:
Category : Science
Languages : en
Pages : 908
Book Description
This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) held October 10-15, 1999, at Research Triangle Park, North Carolina. They contain 401 papers, 19 of which were invited.
Silicon Carbide
Author: Peter FriedrichsPublisher: John Wiley & Sons
ISBN: 3527629068
Category : Science
Languages : en
Pages : 528
Book Description
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 4
Book Description
A complete chemical vapor deposition (CVD) system for growing SiC epitaxial films and bulk crystals was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. This CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases. The aggressive SiCl4 corrosion in the chamber and the gas lines has been investigated and found to be predominantly related to moisture, and this severe problem has been solved by keeping the gas lines and the growth reactor in vacuum or in inert atmosphere when the CVD system is not running.
Thermal Expansion and Thermal Expansion Anisotropy of the 3C, 4H, and 6H Polytypes of Silicon Carbide
Author: Zhuang LiSingle Crystals of Electronic Materials
Author: Roberto FornariPublisher: Woodhead Publishing
ISBN: 008102097X
Category : Technology & Engineering
Languages : en
Pages : 596
Book Description
Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. Presents the latest research and most comprehensive overview of both standard and novel semiconductors Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Physics Briefs
Author: SiC Materials and Devices
Author: Michael ShurPublisher: World Scientific
ISBN: 9812706852
Category : Technology & Engineering
Languages : en
Pages : 143
Book Description
Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices. Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.
Silicon Carbide
Author: Wolfgang J. ChoykePublisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911
Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.