Author: Anders ElfvingPublisher:
ISBN: 9789185497249
Category :
Languages : en
Pages : 74
Book Description
Near-infrared Photodetectors Based on Si/SiGe Nanostructures
Author: Anders ElfvingPublisher:
ISBN: 9789185497249
Category :
Languages : en
Pages : 74
Book Description
Near-infrared Photodetectors Based on Si/SiGe Quantum Nanostructures
Author: Phansak IamraksaSilicon Photonics
Author: M. Jamal DeenPublisher: John Wiley & Sons
ISBN: 1119940907
Category : Technology & Engineering
Languages : en
Pages : 426
Book Description
The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: Basic Properties of Silicon Quantum Wells, Wires, Dots and Superlattices Absorption Processes in Semiconductors Light Emitters in Silicon Photodetectors , Photodiodes and Phototransistors Raman Lasers including Raman Scattering Guided Lightwaves Planar Waveguide Devices Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines the basic principles of operation of devices, the structures of the devices, and offers an insight into state-of-the-art and future developments.
Miniaturized Silicon Photodetectors
Author: Maurizio CasalinoPublisher: MDPI
ISBN: 3036500448
Category : Technology & Engineering
Languages : en
Pages : 148
Book Description
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Silicon-Germanium (SiGe) Nanostructures
Author: Y. ShirakiPublisher: Elsevier
ISBN: 0857091425
Category : Technology & Engineering
Languages : en
Pages : 649
Book Description
Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Handbook of Silicon Photonics
Author: Laurent VivienPublisher: Taylor & Francis
ISBN: 1439836116
Category : Science
Languages : en
Pages : 831
Book Description
The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,
Two-Dimensional Nanostructures for Energy-Related Applications
Author: Kuan Yew CheongPublisher: CRC Press
ISBN: 1315352850
Category : Science
Languages : en
Pages : 326
Book Description
This edited book focuses on the latest advances and development of utilizing two-dimensional nanostructures for energy and its related applications. Traditionally, the geometry of this material refers to "thin film" or "coating." The book covers three main parts, beginning with synthesis, processing, and property of two-dimensional nanostructures for active and passive layers followed by topics on characterization of the materials. It concludes with topics relating to utilization of the materials for usage in devises for energy and its related applications.
Miniaturized Silicon Photodetectors
Author: Maurizio CasalinoPublisher:
ISBN: 9783036500454
Category :
Languages : en
Pages : 148
Book Description
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Advanced Near-infrared Photodetectors Based on Lead Sulfide Quantum Dots
Author: Haodong TangSilicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9
Author: F. RoozeboomPublisher: The Electrochemical Society
ISBN: 1607688689
Category : Science
Languages : en
Pages : 176
Book Description
This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.