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Author: Daniel Montero Álvarez Publisher: ISBN: 9783030638276 Category : Languages : en Pages : 0
Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Author: Daniel Montero Álvarez Publisher: ISBN: 9783030638276 Category : Languages : en Pages : 0
Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Author: Daniel Montero Álvarez Publisher: ISBN: Category : Infrared detectors Languages : en Pages : 230
Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Author: Daniel Montero Álvarez Publisher: Springer Nature ISBN: 303063826X Category : Technology & Engineering Languages : en Pages : 262
Book Description
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.
Author: Daniel Montero Álvarez Publisher: ISBN: Category : Languages : en Pages : 216
Book Description
Along this thesis, titled “Near Infrared detectors based on silicon supersaturated with transition metals”, we describe the research based on Ti supersaturated Si substrates, aiming to extend the photoresponse of bare Si towards photon energies lower than the bandgap at room temperature. The starting material is a crystalline Si substrate, which is Ti ion implanted in concentrations up to five orders of magnitude higher than the solid solubility limit (hence the “supersaturation” term). Later, a Nanosecond Laser Annealing (NLA) treatment is used to recover the crystal quality lost after the implantation process. When the concentration of Ti atoms is high enough, the discrete wave function of each impurity may overlap to form an allowed band of states between the valence and the conduction band, called the impurity band. Thus, carriers from the valence band could promote to the conduction band through the Ti impurity band by absorbing photons with energy lower than the band gap...
Author: Maurizio Casalino Publisher: ISBN: Category : Electronic books Languages : en Pages : 0
Book Description
Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.
Author: Fuccio Cristiano Publisher: Woodhead Publishing ISBN: 0128202564 Category : Technology & Engineering Languages : en Pages : 428
Book Description
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. - Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena - Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations - Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
Author: Publisher: ISBN: Category : Languages : en Pages : 24
Book Description
Work performed in Phase I of this project clearly established the feasibility of using SiGe detectors in the LWIR region. The most important achievements are: Both, Schottky barrier and multiquantum well structures based on SiGe alloys and capable of detection in the LWIR region have been grown by the RTCVD epitaxial growth method; For the first time, the selective epitaxial growth of LWIR SiGe detectors on silicon substrates with CMOS circuitry has been demonstrated, thus showing that monolithically integrated detector-multiplexer structures are feasible; Schottky barrier detectors with cut-off wavelengths exceeding 10 micrometers have been demonstrated; Extensive spectral response, cut-off wavelength and dark current measurements for Schottky barrier detectors based on Pt silicide/ SiGe alloys with Ge content ranging from 0 to 20% have been carried out and discussed. Infrared detectors, SiGe alloys, Schottky barrier detectors, Multiquantum wells.
Author: Daniel Montero Álvarez
Author: Daniel Montero Álvarez
Author: Daniel Montero Álvarez
Author: Daniel Montero Álvarez
Author: Daniel Montero Álvarez
Author: Maurizio Casalino
Author: Fuccio Cristiano
Author: Anders Elfving
Author: Phansak Iamraksa
Author: 
Author: Dan Mihai Buca