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Author: Mark Lundstrom Publisher: Springer Science & Business Media ISBN: 0387280030 Category : Technology & Engineering Languages : en Pages : 223
Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: Mark Lundstrom Publisher: Springer Science & Business Media ISBN: 0387280030 Category : Technology & Engineering Languages : en Pages : 223
Book Description
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Author: David Esseni Publisher: Cambridge University Press ISBN: 1139494384 Category : Technology & Engineering Languages : en Pages : 489
Book Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author: Publisher: Academic Press ISBN: 9780123751799 Category : Technology & Engineering Languages : en Pages : 560
Book Description
With the increasing demand for smaller, faster, and more highly integrated optical and electronic devices, as well as extremely sensitive detectors for biomedical and environmental applications, a field called nano-optics or nano-photonics/electronics is emerging – studying the many promising optical properties of nanostructures. Like nanotechnology itself, it is a rapidly evolving and changing field – but because of strong research activity in optical communication and related devices, combined with the intensive work on nanotechnology, nano-optics is shaping up fast to be a field with a promising future. This book serves as a one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments. Provides overview of the field of Nano-optics/photonics and electronics, detailing practical examples of photonic technology in a wide range of applications Discusses photonic systems and devices with mathematical rigor precise enough for design purposes A one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments.
Author: Amit Chaudhry Publisher: Springer Science & Business Media ISBN: 1461468221 Category : Technology & Engineering Languages : en Pages : 211
Book Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Author: Mark S Lundstrom Publisher: World Scientific Publishing Company ISBN: 981457175X Category : Technology & Engineering Languages : en Pages : 389
Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Mark Lundstrom Publisher: World Scientific Publishing Company ISBN: 9789814571739 Category : Metal oxide semiconductor field-effect transistors Languages : en Pages : 0
Book Description
Overview -- The transistor as a black box -- The MOSFET: a barrier-controlled device -- MOSFET IV: traditional approach -- MOSFET IV: the virtual source model -- Poisson equation and the depletion approximation -- Gate voltage and surface potential -- Mobile charge: bulk MOS -- Mobile charge: extremely thin SOI -- 2D MOS electrostatics -- The VS model revisited -- The Landauer approach to transport -- The ballistic MOSFET -- The ballistic injection velocity -- Connecting the ballistic and VS models -- Carrier scattering and transmission -- Transmission theory of the MOSFET -- Connecting the transmission and VS models -- VS characterization of transport in nanotransistors -- Limits and limitations
Author: Sandip Tiwari Publisher: Oxford University Press ISBN: 0191078042 Category : Science Languages : en Pages : 682
Book Description
Nanoscale devices differ from larger microscale devices because they depend on the physical phenomena and effects that are central to their operation. This textbook illuminates the behavior of nanoscale devices by connecting them to the electronic, as well as magnetic, optical and mechanical properties, which fundamentally affect nanoscale devices in fascinating ways. Their small size means that an understanding of the phenomena measured is even more important, as their effects are so dominant and the changes in scale of underlying energetics and response are significant. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the interactions, and others. These interactions, with the limits on size, make their physical behavior interesting, important and useful. The collection of four textbooks in the Electroscience Series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.
Book Description
Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Author: Mark Lundstrom Publisher: World Scientific Publishing Company Incorporated ISBN: 9789814571722 Category : Technology & Engineering Languages : en Pages : 342
Book Description
The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, "bottom-up approach" that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits.
Author: Ashok Srivastava Publisher: CRC Press ISBN: 9814613118 Category : Science Languages : en Pages : 153
Book Description
Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me
Author: Mark Lundstrom
Author: Mark Lundstrom
Author: David Esseni
Author: 
Author: Amit Chaudhry
Author: Mark S Lundstrom
Author: Mark Lundstrom
Author: Sandip Tiwari
Author: Ekta Goel, Archana Pandey
Author: Mark Lundstrom
Author: Ashok Srivastava