Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Nanoscale CMOS PDF full book. Access full book title Nanoscale CMOS by Francis Balestra. Download full books in PDF and EPUB format.
Author: Francis Balestra Publisher: John Wiley & Sons ISBN: 1118622472 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Francis Balestra Publisher: John Wiley & Sons ISBN: 1118622472 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Saraju P. Mohanty Publisher: Springer Science & Business Media ISBN: 0387764747 Category : Technology & Engineering Languages : en Pages : 325
Book Description
This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.
Author: Sandip Kundu Publisher: McGraw Hill Professional ISBN: 0071635203 Category : Technology & Engineering Languages : en Pages : 316
Book Description
Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies
Author: Ban Wong Publisher: John Wiley & Sons ISBN: 0471678864 Category : Technology & Engineering Languages : en Pages : 413
Book Description
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author: Filip Tavernier Publisher: Springer Science & Business Media ISBN: 1441999256 Category : Technology & Engineering Languages : en Pages : 231
Book Description
This book describes the design of optical receivers that use the most economical integration technology, while enabling performance that is typically only found in very expensive devices. To achieve this, all necessary functionality, from light detection to digital output, is integrated on a single piece of silicon. All building blocks are thoroughly discussed, including photodiodes, transimpedance amplifiers, equalizers and post amplifiers.
Author: David Esseni Publisher: Cambridge University Press ISBN: 1139494384 Category : Technology & Engineering Languages : en Pages : 489
Book Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author: Vinod Kumar Khanna Publisher: Springer ISBN: 8132236254 Category : Technology & Engineering Languages : en Pages : 471
Book Description
Keeping nanoelectronics in focus, this book looks at interrelated fields namely nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology, that go hand-in-hand or are likely to be utilized in future in various ways for backing up or strengthening nanoelectronics. Complementary nanosciences refer to the alternative nanosciences that can be combined with nanoelectronics. The book brings students and researchers from multiple disciplines (and therefore with disparate levels of knowledge, and, more importantly, lacunae in this knowledge) together and to expose them to the essentials of integrative nanosciences. The central idea is that the five identified disciplines overlap significantly and arguably cohere into one fundamental nanotechnology discipline. The book caters to interdisciplinary readership in contrast to many of the existing nanotechnology related books that relate to a specific discipline. The book lays special emphasis on nanoelectronics since this field has advanced most rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and their interrelationship in this book are of considerable interest and immense value to students, professional engineers, and reserachers.
Author: Charles Chiang Publisher: Springer Science & Business Media ISBN: 1402051883 Category : Technology & Engineering Languages : en Pages : 277
Book Description
This book walks the reader through all the aspects of manufacturability and yield in a nano-CMOS process. It covers all CAD/CAE aspects of a SOC design flow and addresses a new topic (DFM/DFY) critical at 90 nm and beyond. This book is a must read book the serious practicing IC designer and an excellent primer for any graduate student intent on having a career in IC design or in EDA tool development.
Author: Sandeep K. Goel Publisher: CRC Press ISBN: 1351833707 Category : Technology & Engineering Languages : en Pages : 266
Book Description
Advances in design methods and process technologies have resulted in a continuous increase in the complexity of integrated circuits (ICs). However, the increased complexity and nanometer-size features of modern ICs make them susceptible to manufacturing defects, as well as performance and quality issues. Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits covers common problems in areas such as process variations, power supply noise, crosstalk, resistive opens/bridges, and design-for-manufacturing (DfM)-related rule violations. The book also addresses testing for small-delay defects (SDDs), which can cause immediate timing failures on both critical and non-critical paths in the circuit. Overviews semiconductor industry test challenges and the need for SDD testing, including basic concepts and introductory material Describes algorithmic solutions incorporated in commercial tools from Mentor Graphics Reviews SDD testing based on "alternative methods" that explores new metrics, top-off ATPG, and circuit topology-based solutions Highlights the advantages and disadvantages of a diverse set of metrics, and identifies scope for improvement Written from the triple viewpoint of university researchers, EDA tool developers, and chip designers and tool users, this book is the first of its kind to address all aspects of SDD testing from such a diverse perspective. The book is designed as a one-stop reference for current industrial practices, research challenges in the domain of SDD testing, and recent developments in SDD solutions.
Author: Sandeep K. Goel Publisher: CRC Press ISBN: 143982942X Category : Technology & Engineering Languages : en Pages : 259
Book Description
Advances in design methods and process technologies have resulted in a continuous increase in the complexity of integrated circuits (ICs). However, the increased complexity and nanometer-size features of modern ICs make them susceptible to manufacturing defects, as well as performance and quality issues. Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits covers common problems in areas such as process variations, power supply noise, crosstalk, resistive opens/bridges, and design-for-manufacturing (DfM)-related rule violations. The book also addresses testing for small-delay defects (SDDs), which can cause immediate timing failures on both critical and non-critical paths in the circuit. Overviews semiconductor industry test challenges and the need for SDD testing, including basic concepts and introductory material Describes algorithmic solutions incorporated in commercial tools from Mentor Graphics Reviews SDD testing based on "alternative methods" that explores new metrics, top-off ATPG, and circuit topology-based solutions Highlights the advantages and disadvantages of a diverse set of metrics, and identifies scope for improvement Written from the triple viewpoint of university researchers, EDA tool developers, and chip designers and tool users, this book is the first of its kind to address all aspects of SDD testing from such a diverse perspective. The book is designed as a one-stop reference for current industrial practices, research challenges in the domain of SDD testing, and recent developments in SDD solutions.
Author: Francis Balestra
Author: Francis Balestra
Author: Saraju P. Mohanty
Author: Sandip Kundu
Author: Ban Wong
Author: Filip Tavernier
Author: David Esseni
Author: Vinod Kumar Khanna
Author: Charles Chiang
Author: Sandeep K. Goel
Author: Sandeep K. Goel