Nanometer SRAM and DRAM Circuit Design PDF Download

Author: Paul S. Lazar
Publisher: Wiley
ISBN: 9780470568323
Category : Technology & Engineering
Languages : en
Pages : 500

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Book Description
Low power consumption is moving higher up on the priority list of system requirements resulting in low power memory architectures and circuit implementations. Circuits need to operate reliably at low voltages (below 1.0V) yet meet their performance targets. The larger spread of process variations as the technology node shrinks makes worst case design impractical. These design challenges impact also the peripheral, control, ancillary and i/o circuits of the SRAM and DRAM. The goal of this book is to describe circuits and circuit design methodologies which overcome these challenges. Examples of scripts, which are used to steer the CAD tools, used in the analysis of the circuits and to gather and present the results of such analysis, are provided. Since a variety of the emerging technologies such as CNT (Carbon Nano Tube) and FinFET are being developed and researched, a new design method for memory cell will also be discussed based on those emerging technologies.

Author: Mohamed Abu Rahma
Publisher: Springer Science & Business Media
ISBN: 1461417481
Category : Technology & Engineering
Languages : en
Pages : 176

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Book Description
Variability is one of the most challenging obstacles for IC design in the nanometer regime. In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density. With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power. This book is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view; Helps designers optimize memory yield, with practical statistical design methodologies and yield estimation techniques.

Author: Koichiro Ishibashi
Publisher: Springer Science & Business Media
ISBN: 3642195687
Category : Technology & Engineering
Languages : en
Pages : 154

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Book Description
Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

Author: Amith Singhee
Publisher: Springer Science & Business Media
ISBN: 1441966064
Category : Technology & Engineering
Languages : en
Pages : 254

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Book Description
Knowledge exists: you only have to ?nd it VLSI design has come to an important in?ection point with the appearance of large manufacturing variations as semiconductor technology has moved to 45 nm feature sizes and below. If we ignore the random variations in the manufacturing process, simulation-based design essentially becomes useless, since its predictions will be far from the reality of manufactured ICs. On the other hand, using design margins based on some traditional notion of worst-case scenarios can force us to sacri?ce too much in terms of power consumption or manufacturing cost, to the extent of making the design goals even infeasible. We absolutely need to explicitly account for the statistics of this random variability, to have design margins that are accurate so that we can ?nd the optimum balance between yield loss and design cost. This discontinuity in design processes has led many researchers to develop effective methods of statistical design, where the designer can simulate not just the behavior of the nominal design, but the expected statistics of the behavior in manufactured ICs. Memory circuits tend to be the hardest hit by the problem of these random variations because of their high replication count on any single chip, which demands a very high statistical quality from the product. Requirements of 5–6s (0.

Author: Andrei Pavlov
Publisher: Springer Science & Business Media
ISBN: 1402083637
Category : Technology & Engineering
Languages : en
Pages : 203

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Book Description
The monograph will be dedicated to SRAM (memory) design and test issues in nano-scaled technologies by adapting the cell design and chip design considerations to the growing process variations with associated test issues. Purpose: provide process-aware solutions for SRAM design and test challenges.

Author: Kiyoo Itoh
Publisher: Springer Science & Business Media
ISBN: 0387688536
Category : Technology & Engineering
Languages : en
Pages : 351

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Book Description
Ultra-low voltage large-scale integrated circuits (LSIs) in nano-scale technologies are needed both to meet the needs of a rapidly growing mobile cell phone market and to offset a significant increase in the power dissipation of high-end microprocessor units. The goal of this book is to provide a detailed explanation of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically discussed in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs.

Author: Balwinder Raj
Publisher: Elsevier
ISBN: 0323998119
Category : Technology & Engineering
Languages : en
Pages : 254

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Book Description
Nanoscale Memristor Device and Circuits Design provides theoretical frameworks, including (i) the background of memristors, (ii) physics of memristor and their modeling, (iii) menristive device applications, and (iv) circuit design for security and authentication. The book focuses on a broad aspect of realization of these applications as low cost and reliable devices. This is an important reference that will help materials scientists and engineers understand the production and applications of nanoscale memrister devices. A memristor is a two-terminal memory nanoscale device that stores information in terms of high/low resistance. It can retain information even when the power source is removed, i.e., "non-volatile." In contrast to MOS Transistors (MOST), which are the building blocks of all modern mobile and computing devices, memristors are relatively immune to radiation, as well as parasitic effects, such as capacitance, and can be much more reliable. This is extremely attractive for critical safety applications, such as nuclear and aerospace, where radiation can cause failure in MOST-based systems. - Outlines the major principles of circuit design for nanoelectronic applications - Explores major applications, including memristor-based memories, sensors, solar cells, or memristor-based hardware and software security applications - Assesses the major challenges to manufacturing nanoscale memristor devices at an industrial scale

Author: Jawar Singh
Publisher: Springer Science & Business Media
ISBN: 1461408180
Category : Technology & Engineering
Languages : en
Pages : 176

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Book Description
This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1466560614
Category : Technology & Engineering
Languages : en
Pages : 448

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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Author: Masashi Horiguchi
Publisher: Springer Science & Business Media
ISBN: 1441979581
Category : Technology & Engineering
Languages : en
Pages : 221

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Book Description
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. This book systematically describes these yield and reliability issues in terms of mathematics and engineering, as well as an array of repair techniques, based on the authors’ long careers in developing memories and low-voltage CMOS circuits. Nanoscale Memory Repair gives a detailed explanation of the various yield models and calculations, as well as various, practical logic and circuits that are critical for higher yield and reliability.