Author: Kevin Scott DilleyPublisher:
ISBN:
Category :
Languages : en
Pages : 49
Book Description
Nanometer-scale surface modifications using a scanning tunneling microscope
Author: Kevin Scott DilleyAtomic and Nanometer-Scale Modification of Materials
Author: P. AvourisPublisher: Springer Science & Business Media
ISBN: 9401120242
Category : Technology & Engineering
Languages : en
Pages : 344
Book Description
This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992. The goal of the organizers was to bring together and facilitate the exchange of information and ideas between researchers involved in the development of techniques for nanometer-scale modification and manipulation. theorists investigating the fundamental mech anisms of the processes involved in modification, and scientists studying the properties and applications of nanostructures. About seventy scientists from all over the world participated in the conference. It has been more than 30 years since Richard Feynman wrote his prophetic article: ''There is Plenty of Room at the Bottom" (Science and Engineering, 23, 22, 1960). In it he predicted that some day we should be able to store bits of information in structures composed of only 100 atoms or so, and thus be able to write all the information accumulated in all the books in the world in a cube of material one two-hundredths of an inch high. He went on to say, "the prin ciples of physics, as far as I can see, do not speak against the possibility of maneuvering things atom by atom. " Since that time there has been significant progress towards the realization of Feynman's dreams.
Scanning Tunneling Microscopy Studies of Nanometer-scale Structures
Author: Standley Michael YorkPublisher:
ISBN:
Category :
Languages : en
Pages : 196
Book Description
Scanning Tunneling Microscopy II
Author: Roland WiesendangerPublisher: Springer Science & Business Media
ISBN: 3642973639
Category : Science
Languages : en
Pages : 316
Book Description
Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in Vol. I, these sudies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described inchapters on scanning force microscopy, magnetic force microscopy, scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Togehter, the two volumes give a comprehensive account of experimental aspcets of STM. They provide essentialreading and reference material for all students and researchers involvedin this field.
Optical Detection and Nanometer Scale Surface Modification in an STM Junction
Author: Tso-Hui TingPublisher:
ISBN:
Category : Scanning tunneling microscopy
Languages : en
Pages : 502
Book Description
Scanning Tunneling Microscopy Studies of Clusters and Materials Modification at the Nanometer Scale
Author: Gordon Michael SheddPublisher:
ISBN:
Category :
Languages : en
Pages : 350
Book Description
Scanning Tunneling Microscopy II
Author: Roland WiesendangerPublisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 372
Book Description
Scanning Tunneling Microscopy II, like its predecessor, presents detailed and comprehensive accounts of the basic principles and broad range of applications of STM and related scanning probe techniques. The applications discussed in this volume come predominantly from the fields of electrochemistry and biology. In contrast to those described in STM I, these studies may be performed in air and in liquids. The extensions of the basic technique to map other interactions are described in chapters on scanning force microscopy, magnetic force microscopy, and scanning near-field optical microscopy, together with a survey of other related techniques. Also described here is the use of a scanning proximal probe for surface modification. Together, the two volumes give a comprehensive account of experimental aspects of STM. They provide essential reading and reference material for all students and researchers involved in this field. In this second edition the text has been updated and new methods are discussed.
Scanning Tunneling Microscopy and Spectroscopy of Nanometer Scale Metallic Features on Silicon Surfaces
Author: Wei YePublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Nanometer scale metals are of great interest due to their potential applications in the future of molecular/atomic scale devices. For example, nanometer scale metal contacts on semiconducting single-walled carbon nanotubes (SWNTs) can determine the transport performance of SWNT based field effect transistors (FETs). In this thesis, I have used an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) to fabricate nanometer scale metallic features on the Si(100)-2©71:H surface and form nanoscale metal contacts on the SWNTs. Scanning tunneling spectroscopy (STS) is used to study the electronic properties of the metallic features and the nano-contacts. Two kinds of metallic features are studied. First, an unpaired dangling bond (DB) can be formed on Si(100)-2©71:H surface using an STM nanolithography method. The unpaired DB, which shows metallic behavior, can perturb its surroundings electronically up to ~1.9 nm by introducing a near-midgap state in the local density of states (LDOS) of neighboring Si atoms. The decay length of the DB-states of an unpaired DB wire can be ~2.5 nm along the dimer row direction. The perturbation of an unpaired DB to an adjacent paired DB is also demonstrated. Second, sub-5 nm HfB2 metals can be direct written on the Si surface using STM electron beam induced deposition (STM-EBID). Nanoscale contacts between HfB2 metal and semiconducting SWNTs can be formed by direct writing HfB2 onto a SWNT or by manipulating a SWNT with the STM tip onto HfB2. STS studies indicate a strong Schottky barrier formed at the HfB2/SWNT interface, which induces metallicity in the SWNT. Metal induced gap states (MIGS) are also observed adjacent to the contact.
Surface Modification and Mechanisms
Author: George E. TottenPublisher: CRC Press
ISBN: 0824752686
Category : Technology & Engineering
Languages : en
Pages : 922
Book Description
Leading readers through an extensive compilation of surface modification reactions and processes for specific tribological results, this reference compiles detailed studies on various residual stresses, reaction processes and mechanisms, heat treatment methods, plasma-based techniques, and more, for a solid understanding of surface structural changes that occur during various engineering procedures. This unique book explores topics previously ignored in other texts on surface engineering and tribology, offers guidelines for the consideration and design of wear life and frictional performance, and sections on laser impingement and nanometer scale surface modification.
Surface Modification of III-V Nanostructures Studied by Low-temperature Scanning Tunneling Microscopy
Author: Yi LiuPublisher:
ISBN: 9789180392921
Category :
Languages : en
Pages :
Book Description
In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g., for quantum computing), the exploration of III-V semiconductor materials and the design of improved devices based on these materials has extended to the nanometer scale, with several highlights in the studies of quantum wells, quantum dots, and nanowires (NW) in recent years. On the path of seeking smaller scale devices, the lateral scale is usually limited by the spatial resolution of the lithographic processes. Now, the challenge lies in the combination of semiconductor nanoscale structure with the desired electronic properties. Scaling down material synthesis to crystalline structures of only few atoms in size and precisely positioned in device configuration has not been realized so far. Moreover, the compatibility for large-scale industrial device processing is also challenging. In this dissertation, I present the surface characterization and studies of the modification of nanostructures on III-V semiconductor surfaces, with the techniques of low temperature scanning tunneling microscopy/spectroscopy (LT-STM/S) and X-ray photoelectron spectroscopy (XPS). Two main topics are Bi incorporation in GaAs (and InAs) surfaces and self-driven formation of nanostructures with atomic-scale precision. Different zinc blende and wurtzite crystal planes have been investigated, including the {11-20}- type facet which for GaAs and InAs uniquely exists on the side walls of NWs and nanoplatelets. The utilization of the tailored facets of NWs as templates for Bi-induced nanostructure formation has been explored as well. Bi-introduced low-dimensional nanostructures and exotic electronic states in III-V semiconductor systems have been investigated. The covalent bonds of Bi atoms in the self-formed Bi nanostructures on III-V substrates can vary depending on the substrate template and preparation condition, such as the Ga-Bi bonds in the 1D chain and 2D island nanostructures on Wz{11-20}-type facets on GaAs NWs. The possibility of tuning the self-formed III-V:Bi nanostructures in a more controllable way has been explored in this thesis. A significant high coverage of Bi on III-V semiconductor surface has been achieved. The observed variable bandgap and Bi-induced surface states are promising for applications in surface bandgap engineering and quantum technology components.