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Author: Yucai Zhang Publisher: ISBN: Category : Languages : en Pages :
Book Description
This thesis investigates multiharmonic tuning of RF power amplifiers using power MOSFETs implemented in bulk silicon CMOS technology. The use of this technique may lead to the low-cost implementation of the RF power amplifier integrated on the same chip as the rest of the wireless transceiver. The work proposes a complete classification of multiharmonic tuning into four basic modes: both odd/even harmonics SHORT (SS), odd harmonics SHORT and even harmonics OPEN (SO), odd harmonics OPEN and even harmonics SHORT (OS), and both odd/even harmonics OPEN (OO). Conventional power amplifiers can then be characterized using these modes of operation in so far as multiharmonic tuning is concerned. A systematic multiharmonic tuning optimization procedure is introduced to find the optimal harmonic terminations. The newly proposed OO mode features a sinusoidal drain current waveform containing no harmonics, resulting in little or no energy wasted at harmonic frequencies and yielding high efficiency. To study the multiharmonic tuning behavior of MOSFET RF power amplifiers, power MOSFETs were implemented in a 0.25[mu]m silicon CMOS process. For power amplifiers using these MOSFETs, at 1.88GHz, the OO mode yields the highest efficiency (PAE = 61%) with a 23.3dBm output power at a 12dBm input power and at a 2.0V supply voltage.
Author: Yucai Zhang Publisher: ISBN: Category : Languages : en Pages :
Book Description
This thesis investigates multiharmonic tuning of RF power amplifiers using power MOSFETs implemented in bulk silicon CMOS technology. The use of this technique may lead to the low-cost implementation of the RF power amplifier integrated on the same chip as the rest of the wireless transceiver. The work proposes a complete classification of multiharmonic tuning into four basic modes: both odd/even harmonics SHORT (SS), odd harmonics SHORT and even harmonics OPEN (SO), odd harmonics OPEN and even harmonics SHORT (OS), and both odd/even harmonics OPEN (OO). Conventional power amplifiers can then be characterized using these modes of operation in so far as multiharmonic tuning is concerned. A systematic multiharmonic tuning optimization procedure is introduced to find the optimal harmonic terminations. The newly proposed OO mode features a sinusoidal drain current waveform containing no harmonics, resulting in little or no energy wasted at harmonic frequencies and yielding high efficiency. To study the multiharmonic tuning behavior of MOSFET RF power amplifiers, power MOSFETs were implemented in a 0.25[mu]m silicon CMOS process. For power amplifiers using these MOSFETs, at 1.88GHz, the OO mode yields the highest efficiency (PAE = 61%) with a 23.3dBm output power at a 12dBm input power and at a 2.0V supply voltage.
Author: Andrei Grebennikov Publisher: McGraw Hill Professional ISBN: 0071782990 Category : Technology & Engineering Languages : en Pages : 433
Book Description
This is a rigorous tutorial on radio frequency and microwave power amplifier design, teaching the circuit design techniques that form the microelectronic backbones of modern wireless communications systems. Suitable for self-study, corporate training, or Senior/Graduate classroom use, the book combines analytical calculations and computer-aided design techniques to arm electronic engineers with every possible method to improve their designs and shorten their design time cycles.
Author: John Wood Publisher: Artech House ISBN: 1608071200 Category : Technology & Engineering Languages : en Pages : 379
Book Description
Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved. This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers are also provided with mathematical approaches to modeling nonlinear dynamical systems, which can be applied in the context of modeling the PA for identification in a pre-distortion system. This book also describes typical approaches to linearization and digital pre-distortion that are used in practice.
Author: B. Jayant Baliga Publisher: World Scientific ISBN: 9812561218 Category : Technology & Engineering Languages : en Pages : 320
Book Description
"The world-wide proliferation of cellular networks has revolutionized telecommunication systems. The transition from Analog to Digital RF technology enabled substantial increase in voice traffic using available spectrum, and subsequently the delivery of digitally based text messaging, graphics and even streaming video. The deployment of digital networks has required migration to multi-carrier RF power amplifiers with stringent demands on linearity and efficiency. This book describes the physics, design considerations and RF performance of silicon power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) that are at the heart of the power amplifiers. The recent invention and commercialization of RF power MOSFETs based on the super-linear mode of operation is described in this book for the first time. In addition to the analytical treatment of the physics, extensive description of transistor operation is provided by using the results of numerical simulations. Many novel power MOSFET structures are analyzed and their performance is compared with those of the laterally-diffused (LD) MOSFET that are currently used in 2G and 3G networks."--BOOK JACKET.Title Summary field provided by Blackwell North America, Inc. All Rights Reserved
Author: Joel Vuolevi Publisher: Artech House ISBN: 9781580536295 Category : Technology & Engineering Languages : en Pages : 280
Book Description
Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations.
Author: Arvind Raghavan Publisher: John Wiley & Sons ISBN: 0471717460 Category : Technology & Engineering Languages : en Pages : 218
Book Description
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Author: Andrei Grebennikov Publisher: Academic Press ISBN: 0128227540 Category : Technology & Engineering Languages : en Pages : 840
Book Description
Switchmode RF and Microwave Power Amplifiers, Third Edition is an essential reference book on developing RF and microwave switchmode power amplifiers. The book combines theoretical discussions with practical examples, allowing readers to design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors, design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies with specified output power, also providing techniques on how to design multiband and broadband Doherty amplifiers using different bandwidth extension techniques and implementation technologies. This book provides the necessary information to understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements. It brings a unique focus on switchmode RF and microwave power amplifiers that are widely used in cellular/wireless, satellite and radar communication systems which offer major power consumption savings. Provides a complete history of high-efficiency Class E and Class F techniques Presents a new chapter on Class E with shunt capacitance and shunt filter to simplify the design of high-efficiency power amplifier with broader frequency bandwidths Covers different Doherty architectures, including integrated and monolithic implementations, which are and will be, used in modern communication systems to save power consumption and to reduce size and costs Includes extended coverage of multiband and broadband Doherty amplifiers with different frequency ranges and output powers using different bandwidth extension techniques Balances theory with practical implementation, avoiding a cookbook approach and enabling engineers to develop better designs, including hybrid, integrated and monolithic implementations
Author: J.L. Dawson Publisher: Springer Science & Business Media ISBN: 140208062X Category : Technology & Engineering Languages : en Pages : 144
Book Description
Improving the performance of the power amplifier is the most pressing problem facing designers of modern radio-frequency (RF) transceivers. Linearity and power efficiency of the transmit path are of utmost importance, and the power amplifier has proven to be the bottleneck for both. High linearity enables transmission at the highest data rates for a given channel bandwidth, and power efficiency prolongs battery lifetime in portable units and reduces heat dissipation in high-power transmitters. Cartesian feedback is a power amplifier linearization technique that acts to soften the tradeoff between power efficiency and linearity in power amplifiers. Despite its compelling, fundamental advantages, the technique has not enjoyed widespread acceptance because of certain implementation difficulties. Feedback Linearization of RF Power Amplifiers introduces new techniques for overcoming the challenges faced by the designer of a Cartesian feedback system. The theory of the new techniques are described and analyzed in detail. The book culminates with the results of the first known fully integrated Cartesian feedback power amplifier system, whose design was enabled by the techniques described. Feedback Linearization of RF Power Amplifiers is a valuable reference work for engineers in the telecommunications industry, industry researchers, academic researchers.
Author: Yucai Zhang
Author: Yucai Zhang
Author: 
Author: Andrei Grebennikov
Author: John Wood
Author: B. Jayant Baliga
Author: Joel Vuolevi
Author: Arvind Raghavan
Author: Andrei Grebennikov
Author: J.L. Dawson
Author: Shuo-Hung Hsu