Multi-scale Models for Wafer Surface Evolution in Chemical Mechanical Planarization PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Multi-scale Models for Wafer Surface Evolution in Chemical Mechanical Planarization PDF full book. Access full book title Multi-scale Models for Wafer Surface Evolution in Chemical Mechanical Planarization by Xiaoping Wang. Download full books in PDF and EPUB format.
Author: Xiaoping Wang Publisher: ISBN: Category : Languages : en Pages : 140
Book Description
As device size decreases and circuit density increases, planarization technology becomes more and more important in semiconductor fabrication. Chemical mechanical planarization (CMP) has emerged as a new promising technique for its capability to achieve better local and global planarization of wafer surface. However, CMP process is sensitive to the pattern structure variation across a chip. The material removal rates are different for the regions with different pattern structure. Therefore, CMP obtains local planarization but generates global thickness variation. Two models, referred as Models I and II, are developed to investigate the pattern structure effect on the post-CMP wafer profile. Model I assumes that the pad asperities contact with the wafer directly. In developing this model, at first, the pressure distribution between a rough pad and a patterned wafer is evaluated based on Greenwood and Williamson model (1966); then, approaches are proposed to re-distribute the pressure due to pad bending to account for the effects of surrounding topography. The modified pressure is utilized in Archard's law (1953) to predict the local material removal rate and associated wafer surface evolution. This model has been verified against the experimental observations. A parametric study is conducted using this model to investigate the effects of pad roughness, bending ability, and influence length (which is defined the range of area over which the surrounding features affect the material removal rate at a given location). CMP designs for effective planarization are discussed based on Model I. Model II extends Model I to account for the abrasive particles effects. The wafer material removal is assumed to be primarily due to the slurry particles abrasion. Modeling is focused on a small region on the wafer surface. The contact pressure at this region is evaluated by Model I first. Then the material removed by a single active particle sliding over this region is estimated. After estimating the number of active particles sliding over this region during a time step, the total material removed from this region and the mean material removal rate can be calculated. By doing this across the whole wafer surface, the wafer profile evolution is obtained.
Author: Xiaoping Wang Publisher: ISBN: Category : Languages : en Pages : 140
Book Description
As device size decreases and circuit density increases, planarization technology becomes more and more important in semiconductor fabrication. Chemical mechanical planarization (CMP) has emerged as a new promising technique for its capability to achieve better local and global planarization of wafer surface. However, CMP process is sensitive to the pattern structure variation across a chip. The material removal rates are different for the regions with different pattern structure. Therefore, CMP obtains local planarization but generates global thickness variation. Two models, referred as Models I and II, are developed to investigate the pattern structure effect on the post-CMP wafer profile. Model I assumes that the pad asperities contact with the wafer directly. In developing this model, at first, the pressure distribution between a rough pad and a patterned wafer is evaluated based on Greenwood and Williamson model (1966); then, approaches are proposed to re-distribute the pressure due to pad bending to account for the effects of surrounding topography. The modified pressure is utilized in Archard's law (1953) to predict the local material removal rate and associated wafer surface evolution. This model has been verified against the experimental observations. A parametric study is conducted using this model to investigate the effects of pad roughness, bending ability, and influence length (which is defined the range of area over which the surrounding features affect the material removal rate at a given location). CMP designs for effective planarization are discussed based on Model I. Model II extends Model I to account for the abrasive particles effects. The wafer material removal is assumed to be primarily due to the slurry particles abrasion. Modeling is focused on a small region on the wafer surface. The contact pressure at this region is evaluated by Model I first. Then the material removed by a single active particle sliding over this region is estimated. After estimating the number of active particles sliding over this region during a time step, the total material removed from this region and the mean material removal rate can be calculated. By doing this across the whole wafer surface, the wafer profile evolution is obtained.
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: Ben Abdallah Naoufel Publisher: Springer Science & Business Media ISBN: 1441989358 Category : Mathematics Languages : en Pages : 297
Book Description
IMA Volumes 135: Transport in Transition Regimes and 136: Dispersive Transport Equations and Multiscale Models focus on the modeling of processes for which transport is one of the most complicated components. This includes processes that involve a wdie range of length scales over different spatio-temporal regions of the problem, ranging from the order of mean-free paths to many times this scale. Consequently, effective modeling techniques require different transport models in each region. The first issue is that of finding efficient simulations techniques, since a fully resolved kinetic simulation is often impractical. One therefore develops homogenization, stochastic, or moment based subgrid models. Another issue is to quantify the discrepancy between macroscopic models and the underlying kinetic description, especially when dispersive effects become macroscopic, for example due to quantum effects in semiconductors and superfluids. These two volumes address these questions in relation to a wide variety of application areas, such as semiconductors, plasmas, fluids, chemically reactive gases, etc.
Author: Muthukkumar Kadavasal Sivaraman Publisher: ISBN: Category : Languages : en Pages : 192
Book Description
Chemical Mechanical Planarization is one of the most required semiconductor processing modules used in fabrication facilities world wide. Among various surface material removal processes, CMP process is primed for its ability to obtain both local and global planarity on a given surface. The model developed by Fu and Chandra et al, calculates the dishing height based on MRR equations. The model provides a way for step by step material removal based on proportionality parameters like interface pressure, table speed and pattern density. The thesis provides a complete chart for developing a control mechanism for CMP process. The thesis bifurcate the approach into Die scale and Wafer Scale. In die scale, a comprehensive control algorithm is developed based on the MRR equations with pressure and velocity as the control parameter. The model establishes a control over the step height uniformity and upper surface uniformity in both uniform pattern density and varying pattern density surfaces. At wafer scale, an analytical model that relates wafer-pad interface pressure and carrier loading is explained and based on that a FEM analysis is carried out to study the impact of non uniform loading on wafer-pad interface. Both the die scale and wafer models, paved way for developing an integrated control flow chart that can have an impact on the wafer surface at both die scale and wafer scales at the same time. Although, a chart or flow map with necessary models and simulations are in place, to put the entire control mechanism work in a realistic environment there are many other requirements. Like a full fledged pixel or zonal controller should be developed and large scale experimental analysis should be performed based on real time data from manufacturing units.
Author: James D. Plummer Publisher: Cambridge University Press ISBN: 1009303589 Category : Technology & Engineering Languages : en Pages : 679
Book Description
Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook. It includes an early introduction of a state-of-the-art CMOS process flow, exposes students to big-picture thinking from the outset, and encourages a practical integration mindset. Extensive use of process and TCAD simulation, using industry tools such as Silvaco Athena and Victory Process, provides students with deeper insight into physical principles, and prepares them for applying these tools in a real-world setting. Accessible framing assumes only a basic background in chemistry, physics and mathematics, providing a gentle introduction for students from a wide range of backgrounds; and over 450 figures (many in color), and more than 280 end-of-chapter problems, will support and cement student understanding. Accompanied by lecture slides and solutions for instructors, this is the ideal introduction to semiconductor technology for senior undergraduate and graduate students in electrical engineering, materials science and physics, and for semiconductor engineering professionals seeking an authoritative introductory reference.
Author: V.K. Jain Publisher: CRC Press ISBN: 143985291X Category : Technology & Engineering Languages : en Pages : 429
Book Description
Increased demand for and developments in micromanufacturing have created a need for a resource that covers both the science and technology of this rapidly growing area. With contributions from eminent professors and researchers actively engaged in teaching, research, and development, Micromanufacturing Processes details the basic principles, tools,
Author: Jianfeng Luo Publisher: Springer Science & Business Media ISBN: 3662079283 Category : Science Languages : en Pages : 327
Book Description
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
Author: Tarek I. Zohdi Publisher: Springer Science & Business Media ISBN: 3642285198 Category : Technology & Engineering Languages : en Pages : 124
Book Description
The objective of this monograph is to provide a concise introduction to the dynamics of systems comprised of charged small-scale particles. Flowing, small-scale, particles ("particulates'') are ubiquitous in industrial processes and in the natural sciences. Applications include electrostatic copiers, inkjet printers, powder coating machines, etc., and a variety of manufacturing processes. Due to their small-scale size, external electromagnetic fields can be utilized to manipulate and control charged particulates in industrial processes in order to achieve results that are not possible by purely mechanical means alone. A unique feature of small-scale particulate flows is that they exhibit a strong sensitivity to interparticle near-field forces, leading to nonstandard particulate dynamics, agglomeration and cluster formation, which can strongly affect manufactured product quality. This monograph also provides an introduction to the mathematically-related topic of the dynamics of swarms of interacting objects, which has gained the attention of a number of scientific communities. In summary, the following topics are discussed in detail: (1) Dynamics of an individual charged particle, (2) Dynamics of rigid clusters of charged particles, (3) Dynamics of flowing charged particles, (4) Dynamics of charged particle impact with electrified surfaces and (5) An introduction to the mechanistic modeling of swarms. The text can be viewed as a research monograph suitable for use in an upper division undergraduate or first year graduate course geared towards students in the applied sciences, mechanics and mathematics that have an interest in the analysis of particulate materials.
Author: Xiaoping Wang
Author: Xiaoping Wang
Author: Babu Suryadevara
Author: Ben Abdallah Naoufel
Author: R. L. Opila
Author: Muthukkumar Kadavasal Sivaraman
Author: James D. Plummer
Author: G. S. Mathad
Author: V.K. Jain
Author: Jianfeng Luo
Author: Tarek I. Zohdi