Molecular Beam Epitaxial (MBE) Growth of Gallium Arsenide and Gallium Aluminum Arsenide PDF Download
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Author: Helmut Kanter Publisher: ISBN: Category : Languages : en Pages : 27
Book Description
The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.
Author: Helmut Kanter Publisher: ISBN: Category : Languages : en Pages : 27
Book Description
The construction and operation of a molecular beam epitaxial (MBE) system for promoting the epitaxial growth of gallium arsenide (GaAs) and gallium aluminum arsenide (FaAlAs) materials is described. These materials are studied in support of development of GaAs-based microwave and millimeter-wave devices as well as fast integrated digital circuits.
Author: Curtis Friedrich Sell Publisher: ISBN: Category : Languages : en Pages : 92
Book Description
This research studies electrical properties of low-temperature grown gallium arsenide antimonide (LT GaAs[subscript x]Sb[subscript (, -x)]) films as a function of composition, and examines low-temperature aluminum arsenide and gallium arsenide for comparison. Literature on LT GaAs, bulk GaAsSb, and MBE grown GaAsSb, and existing models for choosing MBE growth parameters are presented. After MBE growth of samples at 300°C, and measurement of their composition using XRD, an improved growth model is constructed. Sheet resistance, mobility, doping type and carrier concentration of the samples grown were determined by Hall and Van der Pauw measurements. The LT GaAsSb sheet resistance decreases with increasing Sb content.
Author: Timothy James Drummond Publisher: ISBN: Category : Languages : en Pages : 58
Book Description
Today there exists a need to be able to process increasing amounts of data at rates beyond the capabilities of existing purely electrical networks. To meet this need, networks which transmit data via an optical carrier rather than an electrical one are being developed. A necessary component of an optical network is a small, easily modulated source of coherent light. The only such source available is a laser diode. The first laser diode to operate continuously at room temperature was a double heterostructure (DH) (Al, Ga)As/GaAs laser prepared by liquid phase epitaxy (LPE). Much effort was subsequently devoted to reproducing those results by molecular beam epitaxy (MBE). MBE offers several advantages over LPE, such as control of composition and impurity profiles to atomic dimensions. Layers cna be grown on larger substrates and with a high degree of uniformity and reproducibility that is not possible with LPE. Despite these advantages, it was six years after the first continuous room temperature operation of an (Al, Ga)As/GaAs DH laser that a similar laser prepared by MBE was reported. The first MBE lasers typically had threshold current densities, Jth, about twice as large as similarly designed LPE lasers. Another three years passed before the art of MBE advanced to the point where it became possible to achieve laser performance equal to the LPE lasers. The presence of non-radiative recombination centers in the bulk (Al, Ga)As layers was shown to make a significant contribution to the high threshold current densities in MBE lasers.
Author: Helmut Kanter
Author: Helmut Kanter
Author: S. K. E. Ragoonaden
Author: Curtis Friedrich Sell
Author: 
Author: Susan C. Palmateer
Author: Susan C. Palmateer
Author: S. P. OH̀agan
Author: Timothy James Drummond
Author: Timothy Scott Henderson
Author: Gordon Orvis Munns