Author: Fred H. Pollak
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 436
Book Description
International Conference on Modulation Spectroscopy
Author: Fred H. Pollak
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 436
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 436
Book Description
Journal of Research of the National Institute of Standards and Technology
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 904
Book Description
Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 904
Book Description
Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Spectroscopy of Semiconductor Microstructures
Author: Gerhard Fasol
Publisher: Springer Science & Business Media
ISBN: 1475765657
Category : Science
Languages : en
Pages : 661
Book Description
Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Publisher: Springer Science & Business Media
ISBN: 1475765657
Category : Science
Languages : en
Pages : 661
Book Description
Proceedings of a NATO ARW held in Venice, Italy, May 9-13, 1989
Granular Nanoelectronics
Author: David K. Ferry
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Publisher: Springer Science & Business Media
ISBN: 1489936890
Category : Science
Languages : en
Pages : 584
Book Description
The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.
Optical Properties of Semiconductor Nanostructures
Author: Marcin L. Sadowski
Publisher: Springer Science & Business Media
ISBN: 9401141584
Category : Science
Languages : en
Pages : 443
Book Description
Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.
Publisher: Springer Science & Business Media
ISBN: 9401141584
Category : Science
Languages : en
Pages : 443
Book Description
Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.
Excitonic Effects and Bandgap Instabilities in Perovskite Solar Cells
Author: Ruf, Fabian
Publisher: KIT Scientific Publishing
ISBN: 3731510162
Category : Science
Languages : en
Pages : 232
Book Description
Perovskite solar cells are the new hope of next-generation photovoltaic concepts for sustainable energy generation. Regarding their favorable optoelectronic properties, bound electron-hole pairs (so-called excitons) play a significant role and are thoroughly investigated utilizing various spectroscopic methods. Moreover, bandgap instabilities caused by segregation effects in mixed perovskites are analyzed in detail using electroreflectance spectroscopy and structural characterization techniques.
Publisher: KIT Scientific Publishing
ISBN: 3731510162
Category : Science
Languages : en
Pages : 232
Book Description
Perovskite solar cells are the new hope of next-generation photovoltaic concepts for sustainable energy generation. Regarding their favorable optoelectronic properties, bound electron-hole pairs (so-called excitons) play a significant role and are thoroughly investigated utilizing various spectroscopic methods. Moreover, bandgap instabilities caused by segregation effects in mixed perovskites are analyzed in detail using electroreflectance spectroscopy and structural characterization techniques.
Spectroscopy And Optoelectronics In Semiconductors And Related Materials - Proceedings Of The Sino-soviet Seminar
Author: Sue-chu Shen
Publisher: World Scientific
ISBN: 9814569682
Category :
Languages : en
Pages : 442
Book Description
This proceedings volume covers new results from recent studies on impurity states, bound states in semiconductors, phonons, excitons and electron confinement in superlattices and quantum wells, magnetooptics, optical properties of solids in far infrared and millimeter wave regions, optical nonlinearity for III-V, II-VI compounds, Si, Ge, amorphous and organic semiconductors as well as optical crystals. Special emphasis is placed on the 2DEG system.
Publisher: World Scientific
ISBN: 9814569682
Category :
Languages : en
Pages : 442
Book Description
This proceedings volume covers new results from recent studies on impurity states, bound states in semiconductors, phonons, excitons and electron confinement in superlattices and quantum wells, magnetooptics, optical properties of solids in far infrared and millimeter wave regions, optical nonlinearity for III-V, II-VI compounds, Si, Ge, amorphous and organic semiconductors as well as optical crystals. Special emphasis is placed on the 2DEG system.
Dilute III-V Nitride Semiconductors and Material Systems
Author: Ayse Erol
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Publisher: Springer Science & Business Media
ISBN: 3540745297
Category : Technology & Engineering
Languages : en
Pages : 607
Book Description
This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Physics, Chemistry And Application Of Nanostructures - Reviews And Short Notes To Nanomeeting-2001
Author: Victor E Borisenko
Publisher: World Scientific
ISBN: 9814491063
Category : Technology & Engineering
Languages : en
Pages : 508
Book Description
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
Publisher: World Scientific
ISBN: 9814491063
Category : Technology & Engineering
Languages : en
Pages : 508
Book Description
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices.
Physics, Chemistry and Application of Nanostructures
Author: Viktor Evgen?evich Borisenko
Publisher: World Scientific
ISBN: 9812810072
Category : Technology & Engineering
Languages : en
Pages : 508
Book Description
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices. Contents: Physics of Nanostructures: Polarons in Quantum Wells (A I Bibik et al.); Screening of Extra Point Charge in a Few Particle Coulomb System (N A Poklonski et al.); Electric Field Effect on Absorption Spectra of an Ensemble of Close-Packed CdSe Nanocrystals (L I Gurinovich et al.); Influence of Surface Phases on Electrical Conductivity of Silicon Surface (D A Tsukanov et al.); Chemistry of Nanostructures: Formation of Ultradisperse Bimetallic Particles by Redox Processes in Aqueous Solutions (Yu A Fedutik et al.); Fast Electrochemical Impedance Spectroscopy for Nanochemistry and Nanophysics (G A Ragoisha & A S Bondarenko); Features of Luminescent Semiconductor Nanowire Array Formation by Electrodeposition into Porous Alumina (S A Gavrilov et al.); Nanotechnology: Massively Parallel Atomic Lines on Silicon Carbide (P Soukiassian); Advancing Magnetic Force Microscopy (I Fedorov et al.); Porous Silicon as a Material for Enhancement of Electron Field Emission (A A Evtukh et al.); Nanostructure Based Devices: A New Multipeak Resonant Tunneling Diode for Signal Processing Application (A N Kholod et al.); Long Term Charge Relaxation in Silicon Single Electron Transistors (A Savin et al.); Resonant Tunneling Through an Array of Quantum Dots Coupled to Superconductors Under the Effect of Magnetic Field (A N Mina); and other papers. Readership: Undergraduates, PhD students and researchers in nanotechnology.
Publisher: World Scientific
ISBN: 9812810072
Category : Technology & Engineering
Languages : en
Pages : 508
Book Description
The book contains impressive results obtained in the XX-th century and discussion of next challenges of the XXI-st century in understanding of the nanoworld. The main sections of the book are: (1) Physics of Nanostructures, (2) Chemistry of Nanostructures, (3) Nanotechnology, (4) nanostructure Based Devices. Contents: Physics of Nanostructures: Polarons in Quantum Wells (A I Bibik et al.); Screening of Extra Point Charge in a Few Particle Coulomb System (N A Poklonski et al.); Electric Field Effect on Absorption Spectra of an Ensemble of Close-Packed CdSe Nanocrystals (L I Gurinovich et al.); Influence of Surface Phases on Electrical Conductivity of Silicon Surface (D A Tsukanov et al.); Chemistry of Nanostructures: Formation of Ultradisperse Bimetallic Particles by Redox Processes in Aqueous Solutions (Yu A Fedutik et al.); Fast Electrochemical Impedance Spectroscopy for Nanochemistry and Nanophysics (G A Ragoisha & A S Bondarenko); Features of Luminescent Semiconductor Nanowire Array Formation by Electrodeposition into Porous Alumina (S A Gavrilov et al.); Nanotechnology: Massively Parallel Atomic Lines on Silicon Carbide (P Soukiassian); Advancing Magnetic Force Microscopy (I Fedorov et al.); Porous Silicon as a Material for Enhancement of Electron Field Emission (A A Evtukh et al.); Nanostructure Based Devices: A New Multipeak Resonant Tunneling Diode for Signal Processing Application (A N Kholod et al.); Long Term Charge Relaxation in Silicon Single Electron Transistors (A Savin et al.); Resonant Tunneling Through an Array of Quantum Dots Coupled to Superconductors Under the Effect of Magnetic Field (A N Mina); and other papers. Readership: Undergraduates, PhD students and researchers in nanotechnology.