Author: A.L. BryantPublisher:
ISBN:
Category :
Languages : en
Pages : 458
Book Description
Modelling of Delta-doped Semiconductor Structures
Author: A.L. BryantMonte Carlo Simulation of Hole Transport and Terahertz Amplification in Multilayer Delta Doped Semiconductor Structures
Author: Maxim V. DolguikhPublisher:
ISBN:
Category :
Languages : en
Pages : 125
Book Description
Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole accumulation in E⊥ B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carriercarrier scattering for the majority of light holes. This allows remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. The same device structure is considered in GaAs. The case of Si is much more complicated due to strong anisotropy of the valence band. The primary new result for Si is the first consideration of the anisotropy of optical phonon scattering for hot holes.
Delta-doping of Semiconductors
Author: E. F. SchubertPublisher: Cambridge University Press
ISBN: 9780521482882
Category : Science
Languages : en
Pages : 628
Book Description
This book is the first to give a comprehensive review of the theory, fabrication, characterisation, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology. After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The techniques for characterising doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles. The latter part of the book deals with specific devices. The book will be of great interest to graduate students, researchers and engineers in the fields of semiconductor physics and microelectronic engineering.
One-dimensional Modelling of Pseudomorphic Semiconductor Heterostructures with Applications to Capacitance-voltage Profililng and Delta-doping
Author: Stephen Peter WilsonPhysical Models of Semiconductor Quantum Devices
Author: Ying FuPublisher: Springer Science & Business Media
ISBN: 9400771746
Category : Science
Languages : en
Pages : 416
Book Description
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology. This book describes the basic quantum mechanical principles underlining this fast developing field. From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
Simulation of Semiconductor Devices and Processes
Author: Siegfried SelberherrPublisher: Springer
ISBN: 9780387825045
Category : Science
Languages : en
Pages : 532
Book Description
Condensed Matter
Author: M. P. DasPublisher: Nova Publishers
ISBN: 9781600210228
Category : Science
Languages : en
Pages : 432
Book Description
Condensed matter is one of the most active fields of physics, with a stream of discoveries in areas from superfluidity and magnetism to the optical, electronic and mechanical properties of materials such as semiconductors, polymers and carbon nanotubes. It includes the study of well-characterised solid surfaces, interfaces and nanostructures as well as studies of molecular liquids (molten salts, ionic solutions, liquid metals and semiconductors) and soft matter systems (colloidal suspensions, polymers, surfactants, foams, liquid crystals, membranes, biomolecules etc) including glasses and biological aspects of soft matter. This book presents state-of-the-art research in this exciting field.
Physics of Semiconductor Devices
Author: V. K. JainPublisher: Springer Science & Business Media
ISBN: 3319030027
Category : Science
Languages : en
Pages : 841
Book Description
The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Characterization of the Transport Properties of Channel Delta-doped Structures by Light-modulated Shubnikov-de Haas Measurements
Author: Physical Models for Quantum Dots
Author: Jean-Pierre LeburtonPublisher: CRC Press
ISBN: 1000348199
Category : Technology & Engineering
Languages : en
Pages : 991
Book Description
Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.