Author: Ronald James SpencePublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 460
Book Description
Modeling of Plasma-enhanced Chemical Vapor Deposited Silicon Nitride Thin Films Into Confined Geometries
Author: Ronald James SpencePublisher:
ISBN:
Category : Plasma-enhanced chemical vapor deposition
Languages : en
Pages : 460
Book Description
Modelling and Experimental Study of Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films
Author: Chue-san YooPublisher:
ISBN:
Category : Vapor-plating
Languages : en
Pages : 210
Book Description
Microwave Plasma-enhanced Chemical Vapor Deposition and Characterization of Diamond and Silicon Nitride Thin Films
Author: Kevin John GrannenPlasma-enhanced Chemical Vapor Deposition of Silicon Nitride from 1,1,3,3,5,5,-hexamethylcyclotrisilazane
Author: Todd Alan BrooksThermal and Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films
Author: Sui-Yuan LynnPublisher:
ISBN:
Category : Silicon nitride
Languages : en
Pages : 212
Book Description
Modeling of Chemical Vapor Deposition of Tungsten Films
Author: Chris R. KleijnPublisher: Birkhäuser
ISBN: 3034877412
Category : Science
Languages : en
Pages : 138
Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Plasma Enhanced Chemical Vapor Deposition of Thin Films and New Crystalline Model Compounds in the Systems Silicon-sulfur and Phosphorus-sulfur
Author: Robert Ko ShibaoPlasma Enhanced Chemical Vapor Depostion of Fluorinated Silicon Nitride
Author: Rhett Eugene LivengoodPublisher:
ISBN:
Category :
Languages : en
Pages : 304
Book Description
Structural, Optical, and Mechanical Properties of Silicon Nitride Films Deposited by Inductively Coupled Plasma Enhanced Chemical Vapor Deposition
Author: Ezgi AbacıoğluThermal Stability of Plasma Enhanced Chemical Vapor Deposited Silicon Nitride Thin Films
Author: Neerushana JehanathanPublisher:
ISBN:
Category : Oxidizing agents
Languages : en
Pages : 127
Book Description
[Truncated abstract] This study investigates the thermal stability of Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride thin films. Effects of heat-treatment in air on the chemical composition, atomic bonding structure, crystallinity, mechanical properties, morphological and physical integrity are investigated. The chemical composition, bonding structures and crystallinity are studied by means of X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared (FTIR) Spectroscopy and Transmission Electron Microscopy (TEM). The mechanical properties, such as hardness and Young’s modulus, are determined by means of nanoindentation. The morphological and physical integrity are analyzed using Scanning Electron Microscopy (SEM) . . . The Young’s modulus (E) and hardness (H) of the film deposited at 448 K were measured to have E=121±1.8 GPa and H=11.7±0.25 GPa. The film deposited at 573 K has E=150±3.6 GPa and H=14.7±0.6 GPa. For the film deposited at 573 K, the Young’s modulus is not affected by heating up to 1148 K. Heating at 1373 K caused significant increase in Young’s modulus to 180∼199 GPa. This is attributed to the crystallization of the film. For the film deposited at 448 K, the Young’s modulus showed a moderate increase, by ∼10%, after heating to above 673 K. This is consistent with the much lower level of crystallization in this film as compared to the film deposited at 573 K. In summary, low temperature deposited PECVD SiNx films are chemically and structurally unstable when heated in air to above 673 K. The main changes include oxidation to SiO2, crystallization of Si3N4 and physical cracking. The film deposited at 573 K is more stable and damage and oxidation resistant than the film deposited at 448 K.