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Author: Daniel Truque Publisher: ISBN: Category : Languages : en Pages : 83
Book Description
The need for better planarity becomes more critical in semiconductor manufacturing as dimensions and tolerance margins keep shrinking. The purpose of this thesis is to understand and model new technologies for the planarization of integrated circuits. Two technologies and models are explored: characterization and modeling of a novel polishing pad, and a dynamic wafer level physical model for electrochemical-mechanical polishing (ECMP). The novel pad contains water soluble particles that dissolve in the slurry when they reach the surface. Different pads, with varying particle concentrations and sizes, are tested by polishing test wafers to extract the necessary model parameters to model each pad's polishing performance. The effect on chip uniformity and step height planarization are studied. The simulations and analysis enable understanding and comparison of pad design decisions, to achieve the best tradeoff in the performance metrics considered. In the second planarization technology, wafer scale uniformity effects are studied in an emerging copper polishing alternative, ECMP. The proposed dynamic wafer level physical ECMP model is able to capture the physics behind the ECMP process, based on modeling of electrical current flowing through the copper thin film on the wafer surface and the ECMP electrolyte solution. The model is able to fit zonal relative removal rates with root mean square error less than 7%, compared to existing empirical models and experiments.
Author: Daniel Truque Publisher: ISBN: Category : Languages : en Pages : 83
Book Description
The need for better planarity becomes more critical in semiconductor manufacturing as dimensions and tolerance margins keep shrinking. The purpose of this thesis is to understand and model new technologies for the planarization of integrated circuits. Two technologies and models are explored: characterization and modeling of a novel polishing pad, and a dynamic wafer level physical model for electrochemical-mechanical polishing (ECMP). The novel pad contains water soluble particles that dissolve in the slurry when they reach the surface. Different pads, with varying particle concentrations and sizes, are tested by polishing test wafers to extract the necessary model parameters to model each pad's polishing performance. The effect on chip uniformity and step height planarization are studied. The simulations and analysis enable understanding and comparison of pad design decisions, to achieve the best tradeoff in the performance metrics considered. In the second planarization technology, wafer scale uniformity effects are studied in an emerging copper polishing alternative, ECMP. The proposed dynamic wafer level physical ECMP model is able to capture the physics behind the ECMP process, based on modeling of electrical current flowing through the copper thin film on the wafer surface and the ECMP electrolyte solution. The model is able to fit zonal relative removal rates with root mean square error less than 7%, compared to existing empirical models and experiments.
Author: Wei Fan (Ph. D.) Publisher: ISBN: Category : Languages : en Pages : 225
Book Description
Planarization processes are a key enabling technology for continued performance and density improvements in integrated circuits (ICs). Dielectric material planarization is widely used in front-end-of-line (FEOL) processing for device isolation and in back-end-of-line (BEOL) processing for interconnection. This thesis studies the physical mechanisms and variations in the planarization using chemical mechanical polishing (CMP). The major achievement and contribution of this work is a systematic methodology to physically model and characterize the non-uniformities in the CMP process. To characterize polishing mechanisms at different length scales, physical CMP models are developed in three levels: wafer-level, die-level and particle-level. The wafer-level model investigates the CMP tool effects on wafer-level pressure non-uniformity. The die-level model is developed to study chip-scale non-uniformity induced by layout pattern density dependence and CMP pad properties. The particle-level model focuses on the contact mechanism between pad asperities and the wafer. Two model integration approaches are proposed to connect wafer-level and particle-level models to the die-level model, so that CMP system impacts on die-level uniformity and feature size dependence are considered. The models are applied to characterize and simulate CMP processes by fitting polishing experiment data and extracting physical model parameters. A series of physical measurement approaches are developed to characterize CMP pad properties and verify physical model assumptions. Pad asperity modulus and characteristic asperity height are measured by nanoindentation and microprofilometry, respectively. Pad aging effect is investigated by comparing physical measurement results at different pad usage stages. Results show that in-situ conditioning keeps pad surface properties consistent to perform polishing up to 16 hours, even in the face of substantial pad wear during extended polishing. The CMP mechanisms identified from modeling and physical characterization are applied to explore an alternative polishing process, referred to as pad-in-a-bottle (PIB). A critical challenge related to applied pressure using pad-in-a-bottle polishing is predicted.
Author: Jianfeng Luo Publisher: Springer Science & Business Media ISBN: 3662079283 Category : Science Languages : en Pages : 327
Book Description
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: Yuzhuo Li Publisher: John Wiley & Sons ISBN: 0471719196 Category : Technology & Engineering Languages : en Pages : 764
Book Description
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
Author: Joy Marie Johnson Publisher: ISBN: Category : Languages : en Pages : 99
Book Description
Progression of technology nodes in integrated circuit design is only possible if there are sustainable, cost-efficient processes by which these designs can be implemented. As future technologies are increasing device density, shrinking device dimensions, and employing novel structures, semiconductor processing must also advance to effectively and eciently process these devices. Arguably one of the most critical, inefficient, poorly understood and costly processes is planarization. Thus, this thesis focuses on two types of planarization processes. Models of efficient and environmentally benign electrochemical-mechanical copper planarization (eCMP) are developed, with a focus on electrochemical mechanisms and wafer-scale uniformity. Specifically, previous models for eCMP are enhanced to consider the full electrochemical system driving planarization in eCMP. We explore the notion of electrochemical reactions at both the cathode and anode, in addition to lateral current flow in a time-averaged calculation. More ecient and accurate models for planarization of shallow-trench isolation (STI) structures are proposed, with a focus on die-scale and feature-scale uniformity. This thesis captures the fundamental weakness of CMP, pattern dependencies, and uses deposition prole effects as well as the pattern-density to more accurately model and physically represent STI structures during CMP. We model, for the first time, the evolution of pattern density as a function of time and step-height, and use layout biasing to account for deposition prole evolution for the accurate prediction of die and feature-scale CMP.
Author: Joseph M. Steigerwald Publisher: John Wiley & Sons ISBN: 3527617752 Category : Science Languages : en Pages : 337
Book Description
Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.
Author: Xiaoping Wang Publisher: ISBN: Category : Languages : en Pages : 140
Book Description
As device size decreases and circuit density increases, planarization technology becomes more and more important in semiconductor fabrication. Chemical mechanical planarization (CMP) has emerged as a new promising technique for its capability to achieve better local and global planarization of wafer surface. However, CMP process is sensitive to the pattern structure variation across a chip. The material removal rates are different for the regions with different pattern structure. Therefore, CMP obtains local planarization but generates global thickness variation. Two models, referred as Models I and II, are developed to investigate the pattern structure effect on the post-CMP wafer profile. Model I assumes that the pad asperities contact with the wafer directly. In developing this model, at first, the pressure distribution between a rough pad and a patterned wafer is evaluated based on Greenwood and Williamson model (1966); then, approaches are proposed to re-distribute the pressure due to pad bending to account for the effects of surrounding topography. The modified pressure is utilized in Archard's law (1953) to predict the local material removal rate and associated wafer surface evolution. This model has been verified against the experimental observations. A parametric study is conducted using this model to investigate the effects of pad roughness, bending ability, and influence length (which is defined the range of area over which the surrounding features affect the material removal rate at a given location). CMP designs for effective planarization are discussed based on Model I. Model II extends Model I to account for the abrasive particles effects. The wafer material removal is assumed to be primarily due to the slurry particles abrasion. Modeling is focused on a small region on the wafer surface. The contact pressure at this region is evaluated by Model I first. Then the material removed by a single active particle sliding over this region is estimated. After estimating the number of active particles sliding over this region during a time step, the total material removed from this region and the mean material removal rate can be calculated. By doing this across the whole wafer surface, the wafer profile evolution is obtained.
Author: Xiaolin Xie (Ph. D.) Publisher: ISBN: Category : Languages : en Pages : 268
Book Description
Chemical mechanical planarization (CMP) has become the enabling planarization technique of choice for current and emerging silicon integrated circuit (IC) fabrication processes. This work studies CMP in dielectric materials in particular, which is widely used in device formation for isolation and in interconnect formation for dielectric planarization. The physical understanding of the process is essential for CMP tool engineers to design optimal consumables, for circuit engineers to make the layout design manufacturing friendly and for process engineers to better control the process. The major contributions of this work are a framework to study the physics of CMP and physically-based particle-level and die-level models of polishing and planarization. A framework for studying the physics of CMP is established by analyzing the complex system and decoupling the interactions occurring at different scales. A particle- level CMP model is developed that bridges the microscopic polishing mechanisms to the macroscopic properties of the system. A physically-based die-level model is proposed by explicit modeling of the pad and pad surface asperities, with model parameters that are based on the physical properties of the pad rather than purely fitting parameters. A semi-empirical die-level CMP model, motivated by the new physically-based die-level model, is developed that improves upon previous pattern density step-height models by making realistic assumptions and approximations, and improving the ease of computation. The model is applied to simulate polishing of either single- material or dual-material structures with either conventional or non conventional slurries. The die-level models are then applied to engineering problems, including design for manufacturing, nanotopography impact, wafer edge roll-off effects, and motor current based endpoint detection.
Author: Daniel Truque
Author: Daniel Truque
Author: Wei Fan (Ph. D.)
Author: Jianfeng Luo
Author: Babu Suryadevara
Author: Yuzhuo Li
Author: Joy Marie Johnson
Author: Joseph M. Steigerwald
Author: Xiaoping Wang
Author: Xiaolin Xie (Ph. D.)
Author: Diego Arbelaez