Author: Dennis Okumu OumaPublisher:
ISBN:
Category :
Languages : en
Pages : 228
Book Description
Modeling of Chemical Mechanical Polishing for Dielectric Planarization
Author: Dennis Okumu OumaPhysical Understanding and Modeling of Chemical Mechanical Planarization in Dielectric Materials
Author: Xiaolin Xie (Ph. D.)Publisher:
ISBN:
Category :
Languages : en
Pages : 268
Book Description
Chemical mechanical planarization (CMP) has become the enabling planarization technique of choice for current and emerging silicon integrated circuit (IC) fabrication processes. This work studies CMP in dielectric materials in particular, which is widely used in device formation for isolation and in interconnect formation for dielectric planarization. The physical understanding of the process is essential for CMP tool engineers to design optimal consumables, for circuit engineers to make the layout design manufacturing friendly and for process engineers to better control the process. The major contributions of this work are a framework to study the physics of CMP and physically-based particle-level and die-level models of polishing and planarization. A framework for studying the physics of CMP is established by analyzing the complex system and decoupling the interactions occurring at different scales. A particle- level CMP model is developed that bridges the microscopic polishing mechanisms to the macroscopic properties of the system. A physically-based die-level model is proposed by explicit modeling of the pad and pad surface asperities, with model parameters that are based on the physical properties of the pad rather than purely fitting parameters. A semi-empirical die-level CMP model, motivated by the new physically-based die-level model, is developed that improves upon previous pattern density step-height models by making realistic assumptions and approximations, and improving the ease of computation. The model is applied to simulate polishing of either single- material or dual-material structures with either conventional or non conventional slurries. The die-level models are then applied to engineering problems, including design for manufacturing, nanotopography impact, wafer edge roll-off effects, and motor current based endpoint detection.
Integrated Modeling of Chemical Mechanical Planarization for Sub-Micron IC Fabrication
Author: Jianfeng LuoPublisher: Springer Science & Business Media
ISBN: 3662079283
Category : Science
Languages : en
Pages : 327
Book Description
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
Integrated Modeling of Chemical Mechanical Planarization/Polishing (CMP) for Integrated Circuit Fabrication
Author: Jianfeng LuoChemical-Mechanical Polishing of Low Dielectric Constant Polymers and Organosilicate Glasses
Author: Christopher Lyle BorstPublisher: Springer Science & Business Media
ISBN: 1461511658
Category : Technology & Engineering
Languages : en
Pages : 235
Book Description
As semiconductor manufacturers implement copper conductors in advanced interconnect schemes, research and development efforts shift toward the selection of an insulator that can take maximum advantage of the lower power and faster signal propagation allowed by copper interconnects. One of the main challenges to integrating a low-dielectric constant (low-kappa) insulator as a replacement for silicon dioxide is the behavior of such materials during the chemical-mechanical planarization (CMP) process used in Damascene patterning. Low-kappa dielectrics tend to be softer and less chemically reactive than silicon dioxide, providing significant challenges to successful removal and planarization of such materials. The focus of this book is to merge the complex CMP models and mechanisms that have evolved in the past decade with recent experimental results with copper and low-kappa CMP to develop a comprehensive mechanism for low- and high-removal-rate processes. The result is a more in-depth look into the fundamental reaction kinetics that alter, selectively consume, and ultimately planarize a multi-material structure during Damascene patterning.
Chemical-Mechanical Planarization of Semiconductor Materials
Author: M.R. OliverPublisher: Springer Science & Business Media
ISBN: 3662062348
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.
Chemical Mechanical Planarization IV
Author: R. L. OpilaPublisher: The Electrochemical Society
ISBN: 9781566772938
Category : Technology & Engineering
Languages : en
Pages : 350
Book Description
Advances in Chemical Mechanical Planarization (CMP)
Author: Babu SuryadevaraPublisher: Woodhead Publishing
ISBN: 0081002181
Category : Technology & Engineering
Languages : en
Pages : 538
Book Description
Advances in Chemical Mechanical Planarization (CMP) provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The technology has grown to encompass the removal and planarization of multiple metal and dielectric materials and layers both at the device and the metallization levels, using different tools and parameters, requiring improvements in the control of topography and defects. This important book offers a systematic review of fundamentals and advances in the area. Part One covers CMP of dielectric and metal films, with chapters focusing on the use of particular techniques and processes, and on CMP of particular various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. Part Two addresses consumables and process control for improved CMP, and includes chapters on the preparation and characterization of slurry, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes, and approaches for defection characterization, mitigation, and reduction. Considers techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for particular materials Addresses consumables and process control for improved CMP
Chemical-Mechanical Planarization: Volume 867
Author: A. KumarPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 330
Book Description
Technology requirements associated with the progressive scaling of devices for future technology nodes, coupled with the aggressive introduction of new materials, places tremendous demands on chemical-mechanical polishing. The goal of this 2005 book, which is part of a popular series from MRS, is to bring together experts from a broad spectrum of research and technology groups currently working on CMP, to review advances made, and to offer a comprehensive discussion of future challenges that must be overcome. The book shows trends in the development of consumables, process modules, tool designs, process integration, modeling, defect characterization, and metrology. Topics include: planarization processes and applications; consumables -CMP pads and slurries; CMP equipment and metrology; and CMP modeling and simulation.
Chemical Mechanical Polishing in Silicon Processing
Author: Publisher: Academic Press
ISBN: 0080864619
Category : Science
Languages : en
Pages : 325
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.