Author: Farzan Jazaeri
Publisher: Cambridge University Press
ISBN: 1107162041
Category : Science
Languages : en
Pages : 255
Book Description
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Author: Farzan Jazaeri
Publisher: Cambridge University Press
ISBN: 1107162041
Category : Science
Languages : en
Pages : 255
Book Description
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Publisher: Cambridge University Press
ISBN: 1107162041
Category : Science
Languages : en
Pages : 255
Book Description
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Author: Farzan Jazaeri
Publisher: Cambridge University Press
ISBN: 1108581390
Category : Technology & Engineering
Languages : en
Pages : 255
Book Description
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Publisher: Cambridge University Press
ISBN: 1108581390
Category : Technology & Engineering
Languages : en
Pages : 255
Book Description
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Junctionless Field-Effect Transistors
Author: Shubham Sahay
Publisher: John Wiley & Sons
ISBN: 1119523532
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Publisher: John Wiley & Sons
ISBN: 1119523532
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Junctionless Field-Effect Transistors
Author: Shubham Sahay
Publisher: John Wiley & Sons
ISBN: 1119523524
Category : Technology & Engineering
Languages : en
Pages : 615
Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Publisher: John Wiley & Sons
ISBN: 1119523524
Category : Technology & Engineering
Languages : en
Pages : 615
Book Description
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Nanowire Transistors
Author: Jean-Pierre Colinge
Publisher: Cambridge University Press
ISBN: 1107052408
Category : Science
Languages : en
Pages : 269
Book Description
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Publisher: Cambridge University Press
ISBN: 1107052408
Category : Science
Languages : en
Pages : 269
Book Description
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Flexible Electronics for Electric Vehicles
Author: Sanjeet Dwivedi
Publisher: Springer Nature
ISBN: 9811905886
Category : Technology & Engineering
Languages : en
Pages : 642
Book Description
This book compiles the refereed papers presented during the 2nd Flexible Electronics for Electric Vehicles (FlexEV - 2021). It presents the diligent work of the research community on flexible electronics applications in different allied fields of engineering - engineering materials to electrical engineering to electronics and communication engineering. The theoretical research concepts are supported with extensive reviews highlighting the trends in the possible and real-life applications of electric vehicles. This book will be useful for research scholars, electric vehicles professionals, driving system designers, and postgraduates from allied domains. This book incorporates economical and efficient electric vehicle driving and the latest innovations in electric vehicle technology with their paradigms and methods that employ knowledge in the research community.
Publisher: Springer Nature
ISBN: 9811905886
Category : Technology & Engineering
Languages : en
Pages : 642
Book Description
This book compiles the refereed papers presented during the 2nd Flexible Electronics for Electric Vehicles (FlexEV - 2021). It presents the diligent work of the research community on flexible electronics applications in different allied fields of engineering - engineering materials to electrical engineering to electronics and communication engineering. The theoretical research concepts are supported with extensive reviews highlighting the trends in the possible and real-life applications of electric vehicles. This book will be useful for research scholars, electric vehicles professionals, driving system designers, and postgraduates from allied domains. This book incorporates economical and efficient electric vehicle driving and the latest innovations in electric vehicle technology with their paradigms and methods that employ knowledge in the research community.
Emerging Devices for Low-Power and High-Performance Nanosystems
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 0429858612
Category : Science
Languages : en
Pages : 284
Book Description
The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.
Publisher: CRC Press
ISBN: 0429858612
Category : Science
Languages : en
Pages : 284
Book Description
The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.
Nanoelectronics for Next-Generation Integrated Circuits
Author: Rohit Dhiman
Publisher: CRC Press
ISBN: 1000778061
Category : Technology & Engineering
Languages : en
Pages : 255
Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Publisher: CRC Press
ISBN: 1000778061
Category : Technology & Engineering
Languages : en
Pages : 255
Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Innovative Applications of Nanowires for Circuit Design
Author: Raj, Balwinder
Publisher: IGI Global
ISBN: 1799864693
Category : Technology & Engineering
Languages : en
Pages : 263
Book Description
Nanowires are an important sector of circuit design whose applications in very-large-scale integration design (VLSI) have huge impacts for bringing revolutionary advancements in nanoscale devices, circuits, and systems due to improved electronic properties of the nanowires. Nanowires are potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high-driving capacity. Although the knowledge and resources for the fabrication of nanowires is currently limited, it is predicted that, with the advancement of technology, conventional fabrication flow can be used for nanoscale devices, specifically nanowires. Innovative Applications of Nanowires for Circuit Design provides relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology. The book covers advanced modeling concepts of nanowires along with their role as a key enabler for innovation in GLSI devices, circuits, and systems. While highlighting topics such as design, simulation, types and applications, and performance analysis of nanowires, this book is ideally intended for engineers, practitioners, stakeholders, academicians, researchers, and students interested in electronics engineering, nanoscience, and nanotechnology.
Publisher: IGI Global
ISBN: 1799864693
Category : Technology & Engineering
Languages : en
Pages : 263
Book Description
Nanowires are an important sector of circuit design whose applications in very-large-scale integration design (VLSI) have huge impacts for bringing revolutionary advancements in nanoscale devices, circuits, and systems due to improved electronic properties of the nanowires. Nanowires are potential devices for VLSI circuits and system applications and are highly preferred in novel nanoscale devices due to their high mobility and high-driving capacity. Although the knowledge and resources for the fabrication of nanowires is currently limited, it is predicted that, with the advancement of technology, conventional fabrication flow can be used for nanoscale devices, specifically nanowires. Innovative Applications of Nanowires for Circuit Design provides relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology. The book covers advanced modeling concepts of nanowires along with their role as a key enabler for innovation in GLSI devices, circuits, and systems. While highlighting topics such as design, simulation, types and applications, and performance analysis of nanowires, this book is ideally intended for engineers, practitioners, stakeholders, academicians, researchers, and students interested in electronics engineering, nanoscience, and nanotechnology.
Nanowire Field Effect Transistors: Principles and Applications
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.