Modeling and Simulation of Short Channel Effects of Amorphous Silicon Thin Film Transistors PDF Download

Author: Ling Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 63

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 102

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Author: Zoubeida Hafdi
Publisher: Springer Nature
ISBN: 3031247930
Category : Technology & Engineering
Languages : en
Pages : 141

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Book Description
This book explains the basic elements that readers need to know about amorphous silicon material and a-Si:H TFTs. It includes the main principles of the transistors operation, modeling and applications. Fundamentals about transport mechanisms in a-Si:H TFTs and the associated electronic properties are introduced and extended to design examples and strategies to build reliable, large-area, performance optimized circuits. The book also reviews the effect of the amorphous silicon nature and how it impacts the transistors properties and their relevant applications. Fundamentals are made as simple as possible to be easily grasped as they cover everything expected to be important for an easy understanding of the introduced concepts. The author’s approach is geared toward undergraduate and graduate students, but the content is also appropriate for circuit simulator developers, integrated circuit designers and manufacturers, as well as everyone engaged in work on large area integrated circuit technologies and photovoltaics.

Author: Fathololoumi, Saeed
Publisher: University of Waterloo
ISBN:
Category : Thin film transistors
Languages : en
Pages : 102

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The recent developments of high resolution flat panel imagers have prompted interests in fabricating smaller on-pixel transistors to obtain higher fill factor and faster speed. This thesis presents fabrication and modeling of short channel amorphous silicon (a-Si:H) vertical thin film transistors (VTFT). A variety of a-Si:H VTFTs with different channel lengths, from 100 nm to 1 [mu]m, are successfully fabricated using the discussed processing steps. Different structural and electrical characteristics of the fabricated device are measured. The results of I-V and C-V characteristics are comprehensively discussed. The 100 nm channel length transistor performance is diverged from regular long channel TFT characteristics, as the short channel effects become dominant in the device, giving rise to necessity of having a physical model to explain such effects. An above threshold model for a-Si:H VTFT current characteristics is extracted. The transport mechanisms are explained and simulated for amorphous silicon material to be used in the device model. The final model shows good agreement with experimental results. However, we used numerical simulation, run in Medici, to further verify the model validity. Simulation allows us to vary different device and material parameters in order to optimize fabrication process for VTFT. The capacitance behavior of the device is extensively studied alongside with a TFT breakdown discussion.

Author: Yue Kuo
Publisher: The Electrochemical Society
ISBN: 9781566774581
Category : Technology & Engineering
Languages : en
Pages : 340

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Author: Jeromeo E. Cobbs
Publisher:
ISBN:
Category :
Languages : en
Pages : 166

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Author: Yue Kuo
Publisher: Springer Science & Business Media
ISBN: 9781402075056
Category : Thin film transistors
Languages : en
Pages : 538

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Book Description
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Author: Michael Shur
Publisher: World Scientific
ISBN: 9789810242800
Category : Technology & Engineering
Languages : en
Pages : 196

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The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for,handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Author:
Publisher: Institute of Electrical & Electronics Engineers(IEEE)
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 128

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Author: Shantanu A. Bhalerao
Publisher:
ISBN:
Category :
Languages : en
Pages : 120

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