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Author: Ao Zhang Publisher: World Scientific ISBN: 9811255377 Category : Technology & Engineering Languages : en Pages : 322
Book Description
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
Author: Ao Zhang Publisher: World Scientific ISBN: 9811255377 Category : Technology & Engineering Languages : en Pages : 322
Book Description
This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.
Author: Arvind Raghavan Publisher: John Wiley & Sons ISBN: 9780470228302 Category : Technology & Engineering Languages : en Pages : 224
Book Description
Achieve higher levels of performance, integration, compactness, and cost-effectiveness in the design and modeling of radio-frequency (RF) power amplifiers RF power amplifiers are important components of any wireless transmitter, but are often the limiting factors in achieving better performance and lower cost in a wireless communication system—presenting the RF IC design community with many challenges. The next-generation technological advances presented in this book are the result of cutting-edge research in the area of large-signal device modeling and RF power amplifier design at the Georgia Institute of Technology, and have the potential to significantly address issues of performance and cost-effectiveness in this area. Richly complemented with hundreds of figures and equations, Modeling and Design Techniques for RF Power Amplifiers introduces and explores the most important topics related to RF power amplifier design under one concise cover. With a focus on efficiency enhancement techniques and the latest advances in the field, coverage includes: Device modeling for CAD Empirical modeling of bipolar devices Scalable modeling of RF MOSFETs Power amplifier IC design Power amplifier design in silicon Efficiency enhancement of RF power amplifiers The description of state-of-the-art techniques makes this book a valuable and handy reference for practicing engineers and researchers, while the breadth of coverage makes it an ideal text for graduate- and advanced undergraduate-level courses in the area of RF power amplifier design and modeling.
Author: M. Jamal Deen Publisher: World Scientific ISBN: 9789810249052 Category : Science Languages : en Pages : 426
Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author: Mikael Sahrling Publisher: Cambridge University Press ISBN: 1108579760 Category : Technology & Engineering Languages : en Pages : 257
Book Description
Do you want to deepen your understanding of complex systems and design integrated circuits more quickly? Learn how with this step-by-step guide that shows, from first principles, how to employ estimation techniques to analyze and solve complex problems in IC design using a simplified modeling approach. Applications are richly illustrated using real-world examples from across IC design, from simple circuit theory, to the electromagnetic effects and high frequency design, and systems such as data converters and phase-locked loops. Basic concepts like inductance and capacitance are related to one other and other RF phenomena inside a modern chip, enhancing understanding without the need for simulators. Use the easy-to-follow models presented to start designing your own products, from inductors and amplifiers to more complex systems. Whether you are an early-career professional or researcher, graduate student, or established IC engineer looking to reduce your reliance on commercial software packages, this is essential reading.
Author: Ali M. Niknejad Publisher: Springer Science & Business Media ISBN: 0306470381 Category : Technology & Engineering Languages : en Pages : 193
Book Description
The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).
Author: Farzan Jazaeri Publisher: Cambridge University Press ISBN: 1108557538 Category : Technology & Engineering Languages : en Pages : 255
Book Description
The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.
Author: Fábio Passos Publisher: Springer Nature ISBN: 3030472477 Category : Technology & Engineering Languages : en Pages : 198
Book Description
This book describes a new design methodology that allows optimization-based synthesis of RF systems in a hierarchical multilevel approach, in which the system is designed in a bottom-up fashion, from the device level up to the (sub)system level. At each level of the design hierarchy, the authors discuss methods that increase the design robustness and increase the accuracy and efficiency of the simulations. The methodology described enables circuit sizing and layout in a complete and automated integrated manner, achieving optimized designs in significantly less time than with traditional approaches.
Author: G.A. Armstrong Publisher: IET ISBN: 0863417434 Category : Technology & Engineering Languages : en Pages : 457
Book Description
The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.
Author: Chenming Hu Publisher: Woodhead Publishing ISBN: 0081024029 Category : Technology & Engineering Languages : en Pages : 258
Book Description
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model
Author: Ao Zhang
Author: Ao Zhang
Author: Arvind Raghavan
Author: M. Jamal Deen
Author: Rui Ma
Author: Mikael Sahrling
Author: Ali M. Niknejad
Author: Farzan Jazaeri
Author: Fábio Passos
Author: G.A. Armstrong
Author: Chenming Hu