Author: Alain CappyPublisher:
ISBN:
Category :
Languages : fr
Pages : 76
Book Description
Sur un nouveau modèle de transistor à effet de champ à grille submicronique
Author: Alain CappyAdvanced Field-Effect Transistors
Author: Dharmendra Singh YadavPublisher: CRC Press
ISBN: 1003816266
Category : Technology & Engineering
Languages : en
Pages : 306
Book Description
Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications. In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics: Design and challenges in tunneling FETs Various modeling approaches for FETs Study of organic thin-film transistors Biosensing applications of FETs Implementation of memory and logic gates with FETs The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.
Modèles non linéaires distribués des transistors à effet de champ
Author: Benoît Mallet-GuyPublisher:
ISBN:
Category :
Languages : fr
Pages : 162
Book Description
LE TRAVAIL PRESENTE DANS CE MEMOIRE CONCERNE LA MODELISATION ELECTRIQUE DISTRIBUEE DES TRANSISTORS A EFFET DE CHAMP HYPERFREQUENCES AFIN DE DISPOSER D'UNE DESCRIPTION PLUS FINE DE CE COMPOSANT POUR LA CAO DES CIRCUITS MICROONDES. DEUX NOUVELLES APPROCHES DE MODELISATION SONT PRESENTEES. ELLES S'APPUIENT TOUTES LES DEUX SUR LA CARACTERISATION EXPERIMENTALE DU TRANSISTOR. DANS LA PREMIERE, LE CANAL EST REPRESENTE PAR UNE LIGNE DE TRANSMISSION ACTIVE. LE MODELE NON LINEAIRE RESULTANT A MONTRE, LORS DE SA VALIDATION PAR DES MESURES DU TYPE LOAD-PULL, UNE REELLE AMELIORATION A REPRODUIRE LE MECANISME DE SATURATION DE LA PUISSANCE DE SORTIE. LE DEUXIEME MODELE PRESENTE DANS CE MANUSCRIT UTILISE UNE DESCRIPTION ELECTROMAGNETIQUE DES PARTIES PASSIVES DU TRANSISTOR, TANDIS QUE CHAQUE DOIGT DU COMPOSANT EST MODELISE PAR UN CIRCUIT EQUIVALENT ELECTRIQUE INTRINSEQUE. CE MODELE A MONTRE DES QUALITES TRES INTERESSANTES D'EXTRAPOLATION DE LA TAILLE ET DE LA GEOMETRIE DU TRANSISTOR MODELISE. IL PERMET EGALEMENT UNE ETUDE BEAUCOUP PLUS REALISTE DE LA STABILITE DES TRANSISTORS A FORT DEVELOPPEMENT DE GRILLE.
MOSFET Modeling for Circuit Analysis and Design
Author: Carlos Galup-MontoroPublisher: World Scientific
ISBN: 9812568107
Category : Technology & Engineering
Languages : en
Pages : 445
Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Modèle de transistor à effet de champ
Author: Eric OngareauModele de transistor a effet de champ. Distribue et non-lineaire pour applications aux ondes millimetriques
Author: Eric OngareauTransistors à effet de champ
Author: Jean Pierre ŒhmichenPublisher:
ISBN: 9782709107174
Category :
Languages : fr
Pages : 263
Book Description
Practical Guide to Organic Field Effect Transistor Circuit Design
Author: Antony SouPublisher: Smithers Rapra
ISBN: 1910242713
Category : Technology & Engineering
Languages : en
Pages : 130
Book Description
The field of organic electronics spans a very wide range of disciplines from physics and chemistry to hardware and software engineering. This makes the field of organic circuit design a daunting prospect full of intimidating complexities, yet to be exploited to its true potential. Small focussed research groups also find it difficult to move beyond their usual boundaries and create systems-on-foil that are comparable with the established silicon world.This book has been written to address these issues, intended for two main audiences; firstly, physics or materials researchers who have thus far designed circuits using only basic drawing software; and secondly, experienced silicon CMOS VLSI design engineers who are already knowledgeable in the design of full custom transistor level circuits but are not familiar with organic devices or thin film transistor (TFT) devices.In guiding the reader through the disparate and broad subject matters, a concise text has been written covering the physics and chemistry of the materials, the derivation of the transistor models, the software construction of the simulation compact models, and the engineering challenges of a right-first-time design flow, with notes and references to the current state-of-the-art advances and publications. Real world examples of simulation models, circuit designs, fabricated samples and measurements have also been given demonstrating how the theory can be used in applications.
Modele analytique du transistor a effet de champ a grille metallique sur GaAs pour une utilisation de type CAO : application a la conception d'un oscillateur
Author: André BigandNOUVEAU MODELE ELECTRIQUE DE TRANSISTOR A EFFET DE CHAMP MILLIMETRIQUE
Author: Laurent EscottePublisher:
ISBN:
Category :
Languages : fr
Pages : 233
Book Description
L'ELABORATION D'UN NOUVEAU MODELE ELECTRIQUE DU TRANSISTOR A EFFET DE CHAMP PERMETTANT DE CARACTERISER LE COMPOSANT EN PETIT SIGNAL PAR SES PARAMETRES S ET SES PARAMETRES DE BRUIT DANS LE DOMAINE MICRO-ONDE ET MILLIMETRIQUE CONSTITUE L'OBJET DE CETTE THESE. NOTRE MODELE EST OBTENU A PARTIR DE MESURES DE PARAMETRES S ET DE FACTEUR DE BRUIT EFFECTUEES JUSQU'A 26 GHZ ET ENSUITE COMPARE A DIFFERENTS MODELES RENCONTRES DANS LA LITTERATURE. UN EXEMPLE D'APPLICATION A LA CONCEPTION D'UN AMPLIFICATEUR BAS NIVEAU LARGE BANDE A CONDUIT A LA REALISATION PRATIQUE D'UN AMPLOFICATEUR A GAIN CONSTANT EN TECHNOLOGIE HYBRIDE DANS LA BANDE 18-40 GHZ