Microstructures and Electrical Properties of SrRuO3 Thin Films on LaAlO3 Substrates PDF Download

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Languages : en
Pages : 24

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Languages : en
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Conductive SrRuO[sub 3] thin films have been deposited using pulsed laser deposition. Structure and microstructure of this system were studied using XRD, SEM, and scanning tunneling microscopy. Electrical properties of these films were measured. The film deposited at 250[degree]C is amorphous-like, showing semiconductor-like temperature dependence of electric conductivity. Film deposited at 425[degree]C is crystalline with very fine grain size (100 [approximately] 200[angstrom]), showing both metallic and semiconductor-like temperature dependence of the electrical conductivity. Film deposited at 775[degree]C shows reisistivity of 280 [mu][Omega][center-dot]cm at RT and resisdual resistivity ratio of 8.4. Optimized deposition conditions were determined. Possible engineering applications of SrRuO[sub 3] thin films are discussed. Bulk and surface electronic structures of SrRuO[sub 3] are calculated using a semi-empirical valence electron linear combination of atomic orbitals, and they are used to understand the electrical properties of the films.

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Languages : en
Pages : 8

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SrRuO3 (SRO) has recently found a number of applications in different fields, e.g. as a buffer layer for the growth of high temperature superconductor (HTS) YBa2Cu3O{sub 7-x} films and as a bottom electrode for ferroelectric or high dielectric constant thin film capacitors and nonvolatile data storage. The growth of high crystallinity SRO films with good structural and electrical properties is the prerequisite for each of these applications. In this paper we describe the affect of one growth parameters temperature (T), on the crystalline quality, epitaxial substrate relationship and resulting electrical properties. SRO films were deposited on LaAlO3 single crystal substrates by pulsed laser deposition at substrate temperatures (T{sub s}) ranging from room temperature (RT) up to 800°C with a nominal film thickness of 150 nm range. The resulting films were characterized by x-ray diffraction, 4-point transport, and STM. The films' microstructures, as revealed by STM, evolved from polygranular at RT to a layered plate-like structure at higher deposition temperatures, T{sub s}, Increasing T{sub s} was marked first by increasing grain size, then a stronger orientational relationship between film and substrate, finally followed by the development of increased connectivity between grains to an extended island or condensed layered state. The transition from polygranular to layered structure occurred at T{sub s}> 650°C. Increased conductivity paralleled the changes in microstructure. The surfaces of all of the films were relatively smooth; the oriented films are suitable for use as conductive templates in multilayer structures.

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Category : Ceramics
Languages : en
Pages : 426

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Author: Johan Börjesson
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Languages : en
Pages : 42

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Author: Xin Wang
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ISBN: 9789178718078
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Languages : en
Pages : 60

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Author: Costas G. Fountzoulas
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Languages : en
Pages : 6

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Ferroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba(0.6)Sr(0.4)Ti(1-y)(A(3+), B(5+))(y)O3 thin films, of nominal thickness of 0.65 micrometer, were synthesized initially at substrate temperatures of 400 deg C, and subsequently annealed to 750 deg C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the post-annealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Author: John D. O'Connor
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Languages : en
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Languages : en
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The present work is devoted to the experimental study of the MI transition in V2O3 thin films, grown on different substrates. The main goal of the work was to develop a technology of growth of V2O3 thin films on substrates with different electrical and structural properties (diamond and LiNbO3), designed for specific applications. The structural and electrical properties of the obtained films were characterized in detail with a special focus on their potential applications. The MIT of V2O3 was investigated by SAW using first directly deposited V2O3 thin film onto a LiNbO3 substrate.

Author: Steven C. Moss
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Category : Technology & Engineering
Languages : en
Pages : 904

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An interdisciplinary group of materials scientists, physicists, chemists and engineers come together in this book to discuss recent advances in the structure and morphology of thin films. Both scientific and technological issues are addressed. Work on thin films for a host of applications including microelectronics, optics, tribology, biomedical technologies and microelectromechanical systems (MEMS) are featured. Topics include: kinetics of growth; grain growth; instabilities, segregation and ordering; silicides; metallization; stresses in thin films; deposition and growth simulations; energetic growth processes; diamond films and carbide and nitride films.