Author: John Espinoza Sanchez (Jr)Publisher:
ISBN:
Category :
Languages : en
Pages : 276
Book Description
Microstructure and Electromigration Effects in A1 and A1 Alloy Thin Films
Author: John Espinoza Sanchez (Jr)Publisher:
ISBN:
Category :
Languages : en
Pages : 276
Book Description
The Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of A1 Alloys
Author: Choongun KimThe Electromigration Effects in Tin Base Alloy Thin Films
Author: Prabjit SinghElectromigration in Thin Films and Electronic Devices
Author: Choong-Un KimPublisher: Elsevier
ISBN: 0857093754
Category : Technology & Engineering
Languages : en
Pages : 353
Book Description
Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure
Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects
Author: Jaeshin ChoNuclear Science Abstracts
Author: Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 1022
Book Description
NSA is a comprehensive collection of international nuclear science and technology literature for the period 1948 through 1976, pre-dating the prestigious INIS database, which began in 1970. NSA existed as a printed product (Volumes 1-33) initially, created by DOE's predecessor, the U.S. Atomic Energy Commission (AEC). NSA includes citations to scientific and technical reports from the AEC, the U.S. Energy Research and Development Administration and its contractors, plus other agencies and international organizations, universities, and industrial and research organizations. References to books, conference proceedings, papers, patents, dissertations, engineering drawings, and journal articles from worldwide sources are also included. Abstracts and full text are provided if available.
Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects
Author: Preparation and Properties of Thin Films
Author: K. N. TuPublisher: Elsevier
ISBN: 1483218295
Category : Technology & Engineering
Languages : en
Pages : 351
Book Description
Treatise on Materials Science and Technology, Volume 24: Preparation and Properties of Thin Films covers the progress made in the preparation of thin films and the corresponding study of their properties. The book discusses the preparation and property correlations in thin film; the variation of microstructure of thin films; and the molecular beam epitaxy of superlattices in thin film. The text also describes the epitaxial growth of silicon structures (thermal-, laser-, and electron-beam-induced); the characterization of grain boundaries in bicrystalline thin films; and the mechanical properties of thin films on substrates. The ion beam modification of thin film; the use of thin alloy films for metallization in microelectronic devices; and the fabrication and physical properties of ultrasmall structures are also encompassed. Materials scientists and materials engineers will find the book invaluable.
Author: 
Author: