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Author: David Louis Harame Publisher: The Electrochemical Society ISBN: 1566775078 Category : Electronic apparatus and appliances Languages : en Pages : 1280
Book Description
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author: David Louis Harame Publisher: The Electrochemical Society ISBN: 1566775078 Category : Electronic apparatus and appliances Languages : en Pages : 1280
Book Description
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author: D. Harame Publisher: The Electrochemical Society ISBN: 1566778255 Category : Science Languages : en Pages : 1066
Book Description
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Author: Boeckl John J. Publisher: ISBN: Category : Gallium arsenide Languages : en Pages :
Book Description
Abstract: In this dissertation we report on the structural quality of the GaAs/Ge interface for GaAs nucleation by solid source molecular beam epitaxy (MBE). Through feedback from these characterizations, optimized growth methods are established, demonstrating the ability to grow defect-free epitaxial GaAs films on Ge substrates. We also present data on the electrical activity associated with defects that result if the growth is not fully controlled. In theses studies we exploit a novel use of an electron beam induced current (EBIC) technique to show the electrical activity associated with anti-phase domains and inter-diffusion from regions as small as 100 nm. Integrating this GaAs MBE nucleation methodology on the SiGe graded substrates we show that the GaAs stoichiometry and material properties transfer without degradation from the higher threading dislocation density of the SiGe substrates. In these studies we show that fundamental defects such as; threading dislocation, anti-phase domains, and atomic inter-diffusion are controlled to a level that enables growth of extremely high quality GaAs device layers. Combined with the low TDD enabled by the SiGe graded buffer, record GaAs/Si minority carrier lifetimes in excess of 10 ns have been achieved. However, other larger scale defects are shown to have a limiting effect on large area device performance. One such morphological surface defect, known as the "bat", is generated during the UHVCVD SiGe growth. The defect was comprehensively studied and results indicate that the impact on GaAs device performance was due to dislocation clusters in MBE device layers. Comparison analysis with GaAs overgrowth via metal organic chemical vapor deposition (MOCVD) demonstrated this growth method produced fully-operational large-area device structure. A model relating surface growth rates to an incomplete lattice-mismatch relaxation predicts the formation of these clusters. While challenges remain for monolithic III/V optoelectronic integration on Si, it is clear that the demonstration of successful GaAs nucleation on the SiGe substrate represents a significant milestone on the path to the final goal of truly integrated III-V devices with Si integrated circuits.
Author: A.G Cullis Publisher: CRC Press ISBN: 1482268698 Category : Science Languages : en Pages : 775
Book Description
With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigat
Author: E. Kasper Publisher: CRC Press ISBN: 1351093525 Category : Technology & Engineering Languages : en Pages : 411
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: David Louis Harame
Author: David Louis Harame
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Author: D. Harame
Author: Boeckl John J.
Author: ASM International
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Author: A.G Cullis
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Author: E. Kasper