High-speed Integrated Circuit Technology PDF Download

Author: Mark J. W. Rodwell
Publisher: World Scientific
ISBN: 9810246382
Category : Technology & Engineering
Languages : en
Pages : 372

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Book Description
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology.

Author: Ron Ho
Publisher: Springer Science & Business Media
ISBN: 1441965882
Category : Technology & Engineering
Languages : en
Pages : 214

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Book Description
Wafer-scale integration has long been the dream of system designers. Instead of chopping a wafer into a few hundred or a few thousand chips, one would just connect the circuits on the entire wafer. What an enormous capability wafer-scale integration would offer: all those millions of circuits connected by high-speed on-chip wires. Unfortunately, the best known optical systems can provide suitably ?ne resolution only over an area much smaller than a whole wafer. There is no known way to pattern a whole wafer with transistors and wires small enough for modern circuits. Statistical defects present a ?rmer barrier to wafer-scale integration. Flaws appear regularly in integrated circuits; the larger the circuit area, the more probable there is a ?aw. If such ?aws were the result only of dust one might reduce their numbers, but ?aws are also the inevitable result of small scale. Each feature on a modern integrated circuit is carved out by only a small number of photons in the lithographic process. Each transistor gets its electrical properties from only a small number of impurity atoms in its tiny area. Inevitably, the quantized nature of light and the atomic nature of matter produce statistical variations in both the number of photons de?ning each tiny shape and the number of atoms providing the electrical behavior of tiny transistors. No known way exists to eliminate such statistical variation, nor may any be possible.

Author: Behzad Razavi
Publisher: McGraw-Hill Science, Engineering & Mathematics
ISBN:
Category : Integrated circuits
Languages : en
Pages : 392

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Book Description
Design of Integrated Circuits for Optical Communicationsdeals with the design of high-speed integrated circuits for optical communication systems. Written for both students and practicing engineers, the book systematically takes the reader from basic concepts to advanced topics, establishing both rigor and intuition. The text emphasizes analysis and design in modern VLSI technologies, particularly CMOS,and presents numerous broadband circuit techniques. Leading researcher Behzad Razavi is also the author ofDesign of Analog CMOS Integrated Circuits.

Author: Dimitri Stoppel
Publisher:
ISBN: 9783736972049
Category :
Languages : en
Pages : 156

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Book Description
For frequencies above 300 GHz applications are still in the research state since commercially available systems are missing. This dissertation shows three key aspects in process development that are now part of a standard indium phosphide (InP) transferred-substrate process, paving the way for future terahertz projects and applications. The InP transferred-substrate process at Ferdinand-Braun-Institut (FBH) has proven to be a promising candidate for the respective semiconductor components. This particular process utilizes the wafer bonding technique, which allows transferring the active monolithic microwave integrated circuits (MMICs) onto a host substrate. Such host substrate can be either a passive substrate that is equipped with through-silicon vias (TSVs) or a BiCMOS wafer. Hetero-integrated approaches offer ideal conditions to fulfill the requirements of applications regarding complexity (BiCMOS) and large bandwidth (InP). Within this thesis, three topics are described in greater detail: benzocyclobutene (BCB) dry etch process development, nickel-chrome (NiCr) thin film resistor (TFRs) development and through-silicon vias implementation. Eventually, the newly developed plasma etch process has been successfully implemented into standard InP processing, with a fivefold increase in etch rate at maintained bias and anisotropy. Also, a method to suppress redeposition formation was shown. Successful circuit measurements with implemented NiCr resistors demonstrated the last step of TFR integration. A new approach with bottom contacted TFRs was successfully integrated. A laser-enabled TSV process was developed to serve as an effective and reliable way to circumvent parasitic parallel plate modes that occur at high operating frequency circuits.