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Author: Panagiotis Dimitrakis Publisher: Elsevier ISBN: 0128146303 Category : Technology & Engineering Languages : en Pages : 534
Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author: Panagiotis Dimitrakis Publisher: Elsevier ISBN: 0128146303 Category : Technology & Engineering Languages : en Pages : 534
Book Description
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Author: Seungbum Hong Publisher: Springer ISBN: 1489975373 Category : Technology & Engineering Languages : en Pages : 280
Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Wen Siang Lew Publisher: Springer Nature ISBN: 9811569126 Category : Science Languages : en Pages : 439
Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Barbara de Salvo Publisher: John Wiley & Sons ISBN: 1118617800 Category : Technology & Engineering Languages : en Pages : 222
Book Description
Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.
Author: Junqiao Wu Publisher: Springer Science & Business Media ISBN: 1441999310 Category : Technology & Engineering Languages : en Pages : 371
Book Description
Metal oxides and particularly their nanostructures have emerged as animportant class of materials with a rich spectrum of properties and greatpotential for device applications. In this book, contributions from leadingexperts emphasize basic physical properties, synthesis and processing, and thelatest applications in such areas as energy, catalysis and data storage. Functional Metal Oxide Nanostructuresis an essential reference for any materials scientist or engineer with aninterest in metal oxides, and particularly in recent progress in defectphysics, strain effects, solution-based synthesis, ionic conduction, and theirapplications.
Author: Yoshio Nishi Publisher: Woodhead Publishing ISBN: 0081025858 Category : Technology & Engineering Languages : en Pages : 664
Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Su-Ting Han Publisher: Woodhead Publishing ISBN: 0128226064 Category : Technology & Engineering Languages : en Pages : 356
Book Description
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. - Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more - Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures - Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Author: Publisher: ScholarlyEditions ISBN: 1481678655 Category : Science Languages : en Pages : 444
Book Description
Oxides—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Oxides—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Oxides—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Author: Zhigang Zang Publisher: John Wiley & Sons ISBN: 352784256X Category : Technology & Engineering Languages : en Pages : 293
Book Description
Metal Oxide Semiconductors Up-to-date resource highlighting highlights emerging applications of metal oxide semiconductors in various areas and current challenges and directions in commercialization Metal Oxide Semiconductors provides a current understanding of oxide semiconductors, covering fundamentals, synthesizing methods, and applications in diodes, thin-film transistors, gas sensors, solar cells, and more. The text presents state-of-the-art information along with fundamental prerequisites for understanding and discusses the current challenges in pursuing commercialization and future directions of this field. Despite rapid advancements in the materials science and device physics of oxide semiconductors over the past decade, the understanding of science and technology in this field remains incomplete due to its relatively short research history; this book aims to bridge the gap between the rapidly advancing research progress in this field and the demand for relevant materials and devices by researchers, engineers, and students. Written by three highly qualified authors, Metal Oxide Semiconductors discusses sample topics such as: Fabrication techniques and principles, covering vacuum-based methods, including sputtering, atomic layer deposition and evaporation, and solution-based methods Fundamentals, progresses, and potentials of p–n heterojunction diodes, Schottky diodes, metal-insulator-semiconductor diodes, and self-switching diodes Applications in thin-film transistors, detailing the current progresses and challenges towards commercialization for n-type TFTs, p-type TFTs, and circuits Detailed discussions on the working mechanisms and representative devices of oxide-based gas sensors, pressure sensors, and PH sensors Applications in optoelectronics, both in solar cells and ultraviolet photodetectors, covering their parameters, materials, and performance Memory applications, including resistive random-access memory, transistor-structured memory devices, transistor-structured artificial synapse, and optical memory transistors A comprehensive monograph covering all aspects of oxide semiconductors, Metal Oxide Semiconductors is an essential resource for materials scientists, electronics engineers, semiconductor physicists, and professionals in the semiconductor and sensor industries who wish to understand all modern developments that have been made in the field.
Author: Panagiotis Dimitrakis
Author: Panagiotis Dimitrakis
Author: Seungbum Hong
Author: Wen Siang Lew
Author: Barbara de Salvo
Author: Junqiao Wu
Author: Yoshio Nishi
Author: Su-Ting Han
Author: 
Author: Zhigang Zang
Author: Tseung-Yuen Tseng