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Author: Yoshio Nishi Publisher: Elsevier ISBN: 0857098098 Category : Computers Languages : en Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Yoshio Nishi Publisher: Elsevier ISBN: 0857098098 Category : Computers Languages : en Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Giovanni Campardo Publisher: Springer Science & Business Media ISBN: 3642147526 Category : Technology & Engineering Languages : en Pages : 498
Book Description
Memory Mass Storage describes the fundamental storage technologies, like Semiconductor, Magnetic, Optical and Uncommon, detailing the main technical characteristics of the storage devices. It deals not only with semiconductor and hard disk memory, but also with different ways to manufacture and assembly them, and with their application to meet market requirements. It also provides an introduction to the epistemological issues arising in defining the process of remembering, as well as an overview on human memory, and an interesting excursus about biological memories and their organization, to better understand how the best memory we have, our brain, is able to imagine and design memory.
Author: Andrei Khurshudov Publisher: Prentice Hall Professional ISBN: 0130927392 Category : Computer storage devices Languages : en Pages : 386
Book Description
This book covers all data storage systems and latest technologies. It's a practical easy-to-use book on data storage. Extensive glossary of computer data storage-related terms. Aimed at a wide audience from beginner to advanced levels.
Author: Richard E. Matick Publisher: John Wiley & Sons ISBN: Category : Computers Languages : en Pages : 700
Book Description
Introduction to memory and storage; Fundamental principles for memory and storage; Random access memory devices and cells; Random access memory principles and organization; Magnetic recording fundamentals; Sequentially access storage systems; Direct access storage systems; File organisation and data structure; Memory hierarchies and virtual memory systems.
Author: Bruce Jacob Publisher: Morgan Kaufmann ISBN: 0080553842 Category : Computers Languages : en Pages : 1017
Book Description
Is your memory hierarchy stopping your microprocessor from performing at the high level it should be? Memory Systems: Cache, DRAM, Disk shows you how to resolve this problem. The book tells you everything you need to know about the logical design and operation, physical design and operation, performance characteristics and resulting design trade-offs, and the energy consumption of modern memory hierarchies. You learn how to to tackle the challenging optimization problems that result from the side-effects that can appear at any point in the entire hierarchy.As a result you will be able to design and emulate the entire memory hierarchy. - Understand all levels of the system hierarchy -Xcache, DRAM, and disk. - Evaluate the system-level effects of all design choices. - Model performance and energy consumption for each component in the memory hierarchy.
Author: Yuan Xie Publisher: Springer Science & Business Media ISBN: 144199551X Category : Technology & Engineering Languages : en Pages : 321
Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Author: Yoshio Nishi Publisher: Woodhead Publishing ISBN: 0081025858 Category : Technology & Engineering Languages : en Pages : 664
Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Jon Tate Publisher: IBM Redbooks ISBN: 0738442887 Category : Computers Languages : en Pages : 302
Book Description
The superabundance of data that is created by today's businesses is making storage a strategic investment priority for companies of all sizes. As storage takes precedence, the following major initiatives emerge: Flatten and converge your network: IBM® takes an open, standards-based approach to implement the latest advances in the flat, converged data center network designs of today. IBM Storage solutions enable clients to deploy a high-speed, low-latency Unified Fabric Architecture. Optimize and automate virtualization: Advanced virtualization awareness reduces the cost and complexity of deploying physical and virtual data center infrastructure. Simplify management: IBM data center networks are easy to deploy, maintain, scale, and virtualize, delivering the foundation of consolidated operations for dynamic infrastructure management. Storage is no longer an afterthought. Too much is at stake. Companies are searching for more ways to efficiently manage expanding volumes of data, and to make that data accessible throughout the enterprise. This demand is propelling the move of storage into the network. Also, the increasing complexity of managing large numbers of storage devices and vast amounts of data is driving greater business value into software and services. With current estimates of the amount of data to be managed and made available increasing at 60% each year, this outlook is where a storage area network (SAN) enters the arena. SANs are the leading storage infrastructure for the global economy of today. SANs offer simplified storage management, scalability, flexibility, and availability; and improved data access, movement, and backup. Welcome to the cognitive era. The smarter data center with the improved economics of IT can be achieved by connecting servers and storage with a high-speed and intelligent network fabric. A smarter data center that hosts IBM Storage solutions can provide an environment that is smarter, faster, greener, open, and easy to manage. This IBM® Redbooks® publication provides an introduction to SAN and Ethernet networking, and how these networks help to achieve a smarter data center. This book is intended for people who are not very familiar with IT, or who are just starting out in the IT world.
Author: Yoshio Nishi
Author: Yoshio Nishi
Author: Walter E. Proebster
Author: Giovanni Campardo
Author: Andrei Khurshudov
Author: Stephen Willis Miller
Author: Richard E. Matick
Author: Bruce Jacob
Author: Yuan Xie
Author: Yoshio Nishi
Author: Jon Tate