Mechanistic Insight and Properties of Metal Oxide Thin Films Deposited Via Atomic Layer Deposition PDF Download

Author: Benjamin Peek
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Author: Dennis Michael Hausmann
Publisher:
ISBN:
Category : Thin film devices
Languages : en
Pages : 350

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Author: Nini Pryds
Publisher: Elsevier
ISBN: 0081017529
Category : Technology & Engineering
Languages : en
Pages : 562

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Book Description
Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. - Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field - Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation - Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike

Author: Becker, Jill Svenja
Publisher: Ann Arbor, Mich. : University Microfilms International
ISBN:
Category : Thin film devices
Languages : en
Pages : 308

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Author: Wilfried G. J. H. M. van Sark
Publisher: Springer Science & Business Media
ISBN: 3642222757
Category : Technology & Engineering
Languages : en
Pages : 588

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Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Author: Babak Anasori
Publisher: Springer Nature
ISBN: 3030190269
Category : Technology & Engineering
Languages : en
Pages : 534

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This book describes the rapidly expanding field of two-dimensional (2D) transition metal carbides and nitrides (MXenes). It covers fundamental knowledge on synthesis, structure, and properties of these new materials, and a description of their processing, scale-up and emerging applications. The ways in which the quickly expanding family of MXenes can outperform other novel nanomaterials in a variety of applications, spanning from energy storage and conversion to electronics; from water science to transportation; and in defense and medical applications, are discussed in detail.

Author: Shriram Ramanathan
Publisher: Springer Science & Business Media
ISBN: 1441906649
Category : Technology & Engineering
Languages : en
Pages : 344

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Book Description
Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.

Author: Ali Mahmoodinezhad
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Author: Jeffrey Thomas Barton
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 276

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Author: Yi Wei Chen
Publisher:
ISBN:
Category :
Languages : en
Pages :

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In recent years, atomic layer deposition (ALD) has become a popular technique to deposit ultra-thin films with superior conformality and thickness control. Because of its unique surface adsorption-limited mechanism and the resulting capability of deposition at low temperatures and moderate pressures, ALD has found industrial applications in field effect transistor fabrication and coating of multilayer interconnection metallization. In this work, I have explored the potential of ALD-grown metal oxide layers in applications beyond typical electronics technologies. In particular, this research has focused on using ALD-grown metal oxides to enhance the performance and stability in aqueous solutions of biomolecular sensors and semiconducting anodes for photoelectrochemical fuel synthesis. In the biosensing application, we have replaced the SiO2 gate dielectric material typically used in high sensitivity bio-field-effect-transistors (bioFET) with high dielectric constant HfO2. The SiO2 bioFET gate dielectric suffers from poor stability and non-ideal dielectric response at the very small physical thicknesses required to achieve high sensitivity. ALD-grown HfO2, on the other hand, is capable of providing high capacitance density with a physically thicker dielectric layer, thanks to its large dielectric constant. With the ALD-HfO2 gate dielectric, biosensor switching behavior was demonstrated using capacitance-voltage measurements in water, while at the same time maintaining the desired high capacitance. In addition, we have verified bio-functionalization of the HfO2 film surface with biotin molecules via photoelectron spectroscopy, and detected streptavidin and avidin binding with capacitance-voltage analysis and molecular AFM imaging methods respectively. For the solar fuel synthesis, we have studied the behavior of ALD-TiO2 tunnel oxides that can protect heretofore unstable semiconductors, such as Si, used as photoanodes in water splitting. For several decades, intense research effort has been devoted to identifying an efficient photoelectrochemical cell for oxidizing water under solar illumination. The resulting hydrogen and oxygen can be used to store energy from the intermittent terrestrial solar resource renewably, using water as a feedstock. However, photoanode materials choices have always been limited because the water oxidation half reaction at the anode surface is highly corrosive and requires large overpotentials. As a result, only oxidation-stable wide bandgap semiconductors such as TiO2 and Fe2O3 have been used as the photoanode. These photoanodes exhibit poor efficiency, however, because of their large bandgaps. Lower bandgap semiconductors, such as Si, are capable of absorbing solar light much more efficiently, but are easily corroded during water oxidation. In this work, a silicon photoanode was passivated by a thin and pinhole-free layer of ALD-TiO2 such that efficient light absorption in the Si and the chemical stability of the TiO2 can be exploited at the same time. This ALD-grown nanocomposite photoanode has been demonstrated to perform water oxidation with low overpotentials, while at the same time maintaining good stability with hours of continuous operation. The tunneling of electronic carriers through the thin ALD-TiO2, required to sustain high oxidation rates, has also been investigated by varying the TiO2 thickness. The annealing temperature and ambient have also been investigated.