Author: Jayadeep Deva Reddy
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Mechanical Properties of Silicon Carbide (SiC) Thin Films
Mechanical Properties of Silicon Carbide Thin Films by Activated Reactive Evaporation (ARE) Process
Characterization of Mechanical Properties of Cubic Silicon Carbide Thin Films Deposited Onto Silicon
Structural, Thermal and Mechanical Properties of Reaction Bonded Silicon Carbide/silicon and Diamond/silicon Carbide Composites
Author: Yuying Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages : 126
Book Description
In addition to the composite systems, model systems of SiC thin films were prepared for investigating the thermal conductivity of nanocrystalline SiC and the interfacial thermal conductance of SiC/Si. The thermal conductivity of SiC was found to be around 1.3 W/m∙K and the highest thermal conductance of SiC/Si interface was measured to be 69.9 MW/m2∙K.
Publisher:
ISBN:
Category :
Languages : en
Pages : 126
Book Description
In addition to the composite systems, model systems of SiC thin films were prepared for investigating the thermal conductivity of nanocrystalline SiC and the interfacial thermal conductance of SiC/Si. The thermal conductivity of SiC was found to be around 1.3 W/m∙K and the highest thermal conductance of SiC/Si interface was measured to be 69.9 MW/m2∙K.
Mechanical Properties of Silicon Carbide
Properties and Applications of Silicon Carbide
Author: Rosario Gerhardt
Publisher: BoD – Books on Demand
ISBN: 9533072016
Category : Science
Languages : en
Pages : 550
Book Description
In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Publisher: BoD – Books on Demand
ISBN: 9533072016
Category : Science
Languages : en
Pages : 550
Book Description
In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
Growth and Mechanical Properties of Filamentary Silicon Carbide Crystals
Author: Luke A. Yerkovich
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 82
Book Description
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 82
Book Description
Properties of Silicon Carbide
Author: Gary Lynn Harris
Publisher: IET
ISBN: 9780852968703
Category : Electronic books
Languages : en
Pages : 312
Book Description
This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Publisher: IET
ISBN: 9780852968703
Category : Electronic books
Languages : en
Pages : 312
Book Description
This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Mechanical Properties of Silicon Carbide
Author: CSA Journal Division
Publisher:
ISBN: 9780883870266
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN: 9780883870266
Category :
Languages : en
Pages :
Book Description
He Mechanical Properties of Amorphous Silicon Carbide Films Deposited by Pecvd and Rf Sputtering for Application as a Structural Layer in Microbridge-Based Rf Mems
Author: Rocco John Parro (III.)
Publisher:
ISBN:
Category :
Languages : en
Pages : 124
Book Description
The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.
Publisher:
ISBN:
Category :
Languages : en
Pages : 124
Book Description
The purpose of this thesis was to characterize the relevant mechanical properties of amorphous silicon carbide in order to evaluate its application to microbridge-based RF MEMS switches. For the study, Young's modulus and residual stress were determined by load deflection testing of bulk micromachined thin film diaphragms of SiC deposited by plasma-enhanced chemical vapor deposition (PECVD) and radio-frequency magnetron sputtering. The effects of film thickness, a silicon or silicon dioxide substrate material, and metallization with chromium and gold on the values of Young's modulus and residual stress were quantified for 300 and 500 nm-thick PECVD SiC films annealed at 450 @C. For bi-layered, 500 nm-thick sputtered SiC films on silicon, the effects of thermal annealing at 350@C and 450@C on the values of Young's modulus, residual stress, and Poisson's ratio were determined.