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Author: W. Murray Bullis Publisher: ISBN: Category : Semiconductors Languages : en Pages : 68
Book Description
About 300 papers concerned with the measurement and interpretation of carrier lifetime in semiconductors are listed together with key words and a brief comment for each. Eight types of entries are included: Description of Methods, Analysis of Results, Standard Methods, Experimental Results, Theroetical Models, Auxiliary Procedures and Data, Reviews, and Books. Emphasis is placed on methods of carrying out measurements of carrier lifetime. Hence complete coverage was attempted and nearly two thirds of the entries appear in the first three categories. A large fraction of the papers listed describe the photoconductivity or photoconductive decay methods. The other most popular methods are based on diode characteristics or the photomagnetoelectric effect. In all, 35 methods for measuring carrier lifetime are represented by entries. In addition, representative papers which describe various models for recombination are included together with a number of papers which discuss the influence of surface recombination and trapping phenomena. Auxiliary procedures such as surface preparation, formation of ohmic contacts, control of temperature, and the like are described in some of the entries. Two indexes, a Key Word Index and an Author Index, are provided together with a classification of the various methods for measuring carrier lifetime. (Author).
Author: W. Murray Bullis Publisher: ISBN: Category : Semiconductors Languages : en Pages : 68
Book Description
About 300 papers concerned with the measurement and interpretation of carrier lifetime in semiconductors are listed together with key words and a brief comment for each. Eight types of entries are included: Description of Methods, Analysis of Results, Standard Methods, Experimental Results, Theroetical Models, Auxiliary Procedures and Data, Reviews, and Books. Emphasis is placed on methods of carrying out measurements of carrier lifetime. Hence complete coverage was attempted and nearly two thirds of the entries appear in the first three categories. A large fraction of the papers listed describe the photoconductivity or photoconductive decay methods. The other most popular methods are based on diode characteristics or the photomagnetoelectric effect. In all, 35 methods for measuring carrier lifetime are represented by entries. In addition, representative papers which describe various models for recombination are included together with a number of papers which discuss the influence of surface recombination and trapping phenomena. Auxiliary procedures such as surface preparation, formation of ohmic contacts, control of temperature, and the like are described in some of the entries. Two indexes, a Key Word Index and an Author Index, are provided together with a classification of the various methods for measuring carrier lifetime. (Author).
Author: Angèle Reinders Publisher: John Wiley & Sons ISBN: 111892746X Category : Technology & Engineering Languages : en Pages : 755
Book Description
Solar PV is now the third most important renewable energy source, after hydro and wind power, in terms of global installed capacity. Bringing together the expertise of international PV specialists Photovoltaic Solar Energy: From Fundamentals to Applications provides a comprehensive and up-to-date account of existing PV technologies in conjunction with an assessment of technological developments. Key features: Written by leading specialists active in concurrent developments in material sciences, solar cell research and application-driven R&D. Provides a basic knowledge base in light, photons and solar irradiance and basic functional principles of PV. Covers characterization techniques, economics and applications of PV such as silicon, thin-film and hybrid solar cells. Presents a compendium of PV technologies including: crystalline silicon technologies; chalcogenide thin film solar cells; thin-film silicon based PV technologies; organic PV and III-Vs; PV concentrator technologies; space technologies and economics, life-cycle and user aspects of PV technologies. Each chapter presents basic principles and formulas as well as major technological developments in a contemporary context with a look at future developments in this rapidly changing field of science and engineering. Ideal for industrial engineers and scientists beginning careers in PV as well as graduate students undertaking PV research and high-level undergraduate students.
Author: John Wilfred Orton Publisher: ISBN: Category : Science Languages : en Pages : 320
Book Description
This is the first comprehensive and unified treatment to describe the physical principles behind experimental techniques used for measuring the electrical properties of semiconductors. The principles involved are illustrated by reference to selected examples drawn from the world of semiconductor materials. By concentrating on the physical principles of each technique and enumerating its inherent limitations the authors have produced a text that will be helpful in solving a variety of problems in semiconductor characterization and one that will not be quickly outdated by developments in the materials themselves. Emphasizes the physics and theory underlying the experimental characterization of semicondutors**Deals with the measurement of minority lifetimes and diffusion length**Discusses electrical and optical methods***INCLUDED IN PHYSICS TODAY, SEPT 90***INCLUDED IN MRS BULLETIN, NOVEMBER 90***INCLUDED IN JRNL OF VACUUM SCI, DECEMBER 90***INCLUDED IN PHYSICS TODAY, FEBRUARY 91
Author: Dieter K. Schroder Publisher: John Wiley & Sons ISBN: 0471739065 Category : Technology & Engineering Languages : en Pages : 800
Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Stefan Rein Publisher: Springer Science & Business Media ISBN: 3540279229 Category : Science Languages : en Pages : 513
Book Description
Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Author: Helmuth Spieler Publisher: OUP Oxford ISBN: 0191523658 Category : Technology & Engineering Languages : en Pages : 513
Book Description
Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Author: Alexander L. Efros Publisher: Springer Science & Business Media ISBN: 1475736770 Category : Technology & Engineering Languages : en Pages : 277
Book Description
A physics book that covers the optical properties of quantum-confined semiconductor nanostructures from both the theoretical and experimental points of view together with technological applications. Topics to be reviewed include quantum confinement effects in semiconductors, optical adsorption and emission properties of group IV, III-V, II-VI semiconductors, deep-etched and self assembled quantum dots, nanoclusters, and laser applications in optoelectronics.
Author: W. Murray Bullis
Author: W. Murray Bullis
Author: Richard L. Mattis
Author: Angèle Reinders
Author: John Wilfred Orton
Author: Dinesh C. Gupta
Author: Dieter K. Schroder
Author: Stefan Rein
Author: Helmuth Spieler
Author: Alexander L. Efros
Author: United States. National Bureau of Standards