Author: R. J. Carter
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Materials, Technology and Reliability for Advanced Interconnects and Low-K Dielectrics - 2004
Author: R. J. Carter
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 432
Book Description
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics
Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects
Author: Ting Y. Tsui
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 498
Book Description
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 498
Book Description
Copper Interconnect Technology
Author: Tapan Gupta
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Publisher: Springer Science & Business Media
ISBN: 1441900764
Category : Technology & Engineering
Languages : en
Pages : 433
Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Materials, Technology and Reliability for Advanced Interconnects 2005: Volume 863
Author: Paul R. Besser
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 450
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2005.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 450
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2005.
Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, 2003
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 544
Book Description
Publisher:
ISBN:
Category : Dielectric films
Languages : en
Pages : 544
Book Description
Advanced Interconnects for ULSI Technology
Author: Mikhail Baklanov
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Publisher: John Wiley & Sons
ISBN: 1119966868
Category : Technology & Engineering
Languages : en
Pages : 616
Book Description
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Dielectrics for Nanosystems
Author:
Publisher: The Electrochemical Society
ISBN: 9781566774178
Category : Dielectrics
Languages : en
Pages : 508
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566774178
Category : Dielectrics
Languages : en
Pages : 508
Book Description
Porous Polymers
Author: Michael S. Silverstein
Publisher: John Wiley & Sons
ISBN: 0470934743
Category : Technology & Engineering
Languages : en
Pages : 480
Book Description
This book gathers the various aspects of the porous polymer field into one volume. It not only presents a fundamental description of the field, but also describes the state of the art for such materials and provides a glimpse into the future. Emphasizing a different aspect of the ongoing research and development in porous polymers, the book is divided into three sections: Synthesis, Characterization, and Applications. The first part of each chapter presents the basic scientific and engineering principles underlying the topic, while the second part presents the state of the art results based on those principles. In this fashion, the book connects and integrates topics from seemingly disparate fields, each of which embodies different aspects inherent in the diverse field of porous polymeric materials.
Publisher: John Wiley & Sons
ISBN: 0470934743
Category : Technology & Engineering
Languages : en
Pages : 480
Book Description
This book gathers the various aspects of the porous polymer field into one volume. It not only presents a fundamental description of the field, but also describes the state of the art for such materials and provides a glimpse into the future. Emphasizing a different aspect of the ongoing research and development in porous polymers, the book is divided into three sections: Synthesis, Characterization, and Applications. The first part of each chapter presents the basic scientific and engineering principles underlying the topic, while the second part presents the state of the art results based on those principles. In this fashion, the book connects and integrates topics from seemingly disparate fields, each of which embodies different aspects inherent in the diverse field of porous polymeric materials.
Low Dielectric Constant Materials for IC Applications
Author: Paul S. Ho
Publisher: Springer Science & Business Media
ISBN: 3642559085
Category : Technology & Engineering
Languages : en
Pages : 323
Book Description
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for
Publisher: Springer Science & Business Media
ISBN: 3642559085
Category : Technology & Engineering
Languages : en
Pages : 323
Book Description
Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for