Materials Research Society Symposium Proceedings: Volume 184, Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures PDF Download
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Author: V. Swaminathan Publisher: ISBN: Category : Languages : en Pages : 300
Book Description
This volume presents results from a Materials Research Society symposium aimed at one of the most important, yet often overlooked, areas in modern III-V device technology, namely the cause and effects of device degradation. Invited papers were presented on reliability calculations and protocols, the effects of various defects on device performance and the stability of layered structures and metallization. This topic is still one in which individual companies are reluctant to share their hard-earned data on reliability and degradation mechanisms, since these constitute a commercial advantage in many cases. It is clearly an area to which too little attention has been paid to date at international forums and it is expected that this will delineate the critical features of device and material degradation. Of continuing interest are the effects of stress and recombination-enhancement on the degradation of electronic and photonic devices, the role of defects in enhancing diffusion of dopants and lattice constituents and the reliability of metals on III-V materials. All of these subjects were covered in individual sessions within the symposium.
Author: V. Swaminathan Publisher: ISBN: Category : Languages : en Pages : 300
Book Description
This volume presents results from a Materials Research Society symposium aimed at one of the most important, yet often overlooked, areas in modern III-V device technology, namely the cause and effects of device degradation. Invited papers were presented on reliability calculations and protocols, the effects of various defects on device performance and the stability of layered structures and metallization. This topic is still one in which individual companies are reluctant to share their hard-earned data on reliability and degradation mechanisms, since these constitute a commercial advantage in many cases. It is clearly an area to which too little attention has been paid to date at international forums and it is expected that this will delineate the critical features of device and material degradation. Of continuing interest are the effects of stress and recombination-enhancement on the degradation of electronic and photonic devices, the role of defects in enhancing diffusion of dopants and lattice constituents and the reliability of metals on III-V materials. All of these subjects were covered in individual sessions within the symposium.
Author: V. Swaminathan
Author: V. Swaminathan
Author: V. Swaminathan
Author: A. Katz
Author: Paul D. Bristowe
Author: D. L. Anton
Author: Pamela B. Vandiver
Author: G. Malcolm Stocks
Author: Avishay Katz
Author: Don W. Shaw
Author: Murray S. Daw