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Author: Milton Ohring Publisher: Academic Press ISBN: 0080575528 Category : Technology & Engineering Languages : en Pages : 759
Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author: Milton Ohring Publisher: Academic Press ISBN: 0080575528 Category : Technology & Engineering Languages : en Pages : 759
Book Description
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Author: William F. Filter Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 616
Book Description
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Author: Anthony S. Oates Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 552
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Author: J. Joseph Clement Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 488
Book Description
The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.
Author: Kim S. Siow Publisher: Springer ISBN: 3319992562 Category : Technology & Engineering Languages : en Pages : 292
Book Description
This book presents the scientific principles, processing conditions, probable failure mechanisms, and a description of reliability performance and equipment required for implementing high-temperature and lead-free die attach materials. In particular, it addresses the use of solder alloys, silver and copper sintering, and transient liquid-phase sintering. While different solder alloys have been used widely in the microelectronics industry, the implementation of sintering silver and transient liquid-phase sintering remains limited to a handful of companies. Hence, the book devotes many chapters to sintering technologies, while simultaneously providing only a cursory coverage of the more widespread techniques employing solder alloys. Addresses the differences between sintering and soldering (the current die-attach technologies), thereby comprehensively addressing principles, methods, and performance of these high-temperature die-attach materials; Emphasizes the industrial perspective, with chapters written by engineers who have hands-on experience using these technologies; Baker Hughes, Bosch and ON Semiconductor, are represented as well as materials suppliers such as Indium; Simultaneously provides the detailed science underlying these technologies by leading academic researchers in the field.
Author: Pradeep Lall Publisher: CRC Press ISBN: 0429605595 Category : Technology & Engineering Languages : en Pages : 332
Book Description
This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
Author: Daniel M. Fleetwood Publisher: CRC Press ISBN: 1420043773 Category : Science Languages : en Pages : 772
Book Description
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author: Milton Ohring
Author: Milton Ohring
Author: 
Author: Materials Research Society. Spring Meeting
Author: William F. Filter
Author: Anthony S. Oates
Author: C. V. Thompson
Author: J. Joseph Clement
Author: Kim S. Siow
Author: Pradeep Lall
Author: Daniel M. Fleetwood