Author: Min-soo NohPublisher:
ISBN:
Category : Semiconductor lasers
Languages : en
Pages :
Book Description
Material Growth and Characterization of GaAsSb on GaAs Grown by MOCVD for Long Wavelength Laser Applications
Author: Min-soo NohPublisher:
ISBN:
Category : Semiconductor lasers
Languages : en
Pages :
Book Description
Dissertation Abstracts International
Author: Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 884
Book Description
The MOCVD Challenge
Author: Manijeh RazeghiPublisher: CRC Press
ISBN: 1482289385
Category : Science
Languages : en
Pages : 460
Book Description
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Molecular Beam Epitaxy
Author: Mohamed HeniniPublisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
GaAsSb/InGaAs Type-II Quantum Wells for Long-wavelength Lasers on GaAs Substrates
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 17
Book Description
The authors have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum well structures grown by molecule beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer, strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 [mu]m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb vs GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in non-ideal interfaces under certain growth conditions. At low injection currents, double heterostructure lasers with GaAsSb/InGaAs bilayer quantum well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities as low as 120 A/cm2 at 1.17 [mu]m, and 2.1 kA/cm2 at 1.21 [mu]m.
Chemical Abstracts
Author: MOCVD Growth and Characterization of Ga[subscript X]In[subscript 1-x]As[subscript Y]P[subscript 1-y] on GaAs Substrate for Optoelectronic Device Applications
![MOCVD Growth and Characterization of Ga[subscript X]In[subscript 1-x]As[subscript Y]P[subscript 1-y] on GaAs Substrate for Optoelectronic Device Applications PDF](https://books.google.com/books/content/images/frontcover/qhrzGgAACAAJ?fife=w80-h100)
Author: Xiaoguang HeThe MOCVD Challenge
Author: Manijeh RazeghiPublisher: CRC Press
ISBN: 1439807000
Category : Science
Languages : en
Pages : 796
Book Description
Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO
International Aerospace Abstracts
Author: MOCVD Growth and Characterization of InAsSb/InAs(SbP) on InAs Substrate for the Mid-infrared Laser Applications
Author: Di WuPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
In order to improve the MWIR laser performance, InAsSbP based laser structures grown by Low pressure Metal-organic Chemical Vapor Deposition (LP-MOCVD) have been studied and developed.