Author: Henry Po-Heng LeePublisher:
ISBN:
Category :
Languages : en
Pages : 526
Book Description
Material and Device Studies of Heteroepitaxial GaAs Films on Si Substrates by Molecular Beam Epitaxy
Author: Henry Po-Heng LeeHeteroepitaxy on Silicon: Volume 116
Author: H. K. ChoiPublisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 576
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Heteroepitaxy on Silicon: Volume 67
Author: J. C. C. FanPublisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 306
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Silicon-Molecular Beam Epitaxy
Author: E. KasperPublisher: CRC Press
ISBN: 1351085069
Category : Technology & Engineering
Languages : en
Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Heteroepitaxy of Dissimilar Materials: Volume 221
Author: Robin F. C. FarrowPublisher: Mrs Proceedings
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 536
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Journal of Research of the National Institute of Standards and Technology
Author: Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 904
Book Description
Reports NIST research and development in the physical and engineering sciences in which the Institute is active. These include physics, chemistry, engineering, mathematics, and computer sciences. Emphasis on measurement methodology and the basic technology underlying standardization.
Studies of Hetero-Epitaxy of GaAs Films on Si Substrate for Effective Control of Defect Density and Internal Stress
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 20
Book Description
During the period April 89-90, we carried out experiments on studies of heteroepitaxial films grown on lattice-mismatched substrates in three main areas: (1) migration-enhanced (or modulated) MBE to promote 2-dimensional growth of heteroepitaxial films, (2) growth on patterned substrates to reduce thermal stress, and (3) study of GaAs/Si laser characteristics, especially polarization dependence and threshold current, to correlate with results from basic material studies in area 1 and 2. Recently we have started exploring new directions for hetero-epitaxy on lattice-mismatched substrates, and have done exploratory work on (4) growth on (111) plane of strained A1InAs/A1As quantum well and (5) GaAs growth on Si/sapphire (SOI) substrate. In this report, we first summarize experimental results on work in groups 1, 2 and 3. This followed by a discussion of our exploratory work which will point the direction for our future research.
III-V Heterostructures for Electronic/Photonic Devices: Volume 145
Author: C. W. TuPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 554
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: 
Author: Hyunchul Sohn