Author: Kaiyou Wang
Publisher: John Wiley & Sons
ISBN: 1119698952
Category : Technology & Engineering
Languages : en
Pages : 340
Book Description
Discover the latest advances in spintronic materials, devices, and applications In Spintronics: Materials, Devices and Applications, a team of distinguished researchers delivers a holistic introduction to spintronic effects within cutting-edge materials and applications. Containing the perfect balance of academic research and practical application, the book discusses the potential—and the key limitations and challenges—of spintronic devices. The latest title in the Wiley Series in Materials for Electronic and Optoelectronic Applications, Spintronics: Materials, Devices and Applications explores giant magneto-resistance (GMR) and tunneling magnetic resistance (TMR) materials, spin-transfer torque and spin-orbit torque materials, spin oscillators, and spin materials for use in artificial neural networks. Applications in multi-ferroelectric and antiferromagnetic materials are presented as well. This book also includes: A thorough introduction to recent research developments in the fields of spintronic materials, devices, and applications Comprehensive explorations of skymions, magnetic semiconductors, and antiferromagnetic materials Practical discussions of spin-transfer torque materials and devices for magnetic random-access memory In-depth examinations of giant magneto-resistance materials and devices for magnetic sensors Perfect for advanced students and researchers in materials science, physics, electronics, and computer science, Spintronics: Materials, Devices and Applications will also earn a place in the libraries of professionals working in the manufacture of optics, photonics, and nanometrology equipment.
Spintronics
Author: Kaiyou Wang
Publisher: John Wiley & Sons
ISBN: 1119698952
Category : Technology & Engineering
Languages : en
Pages : 340
Book Description
Discover the latest advances in spintronic materials, devices, and applications In Spintronics: Materials, Devices and Applications, a team of distinguished researchers delivers a holistic introduction to spintronic effects within cutting-edge materials and applications. Containing the perfect balance of academic research and practical application, the book discusses the potential—and the key limitations and challenges—of spintronic devices. The latest title in the Wiley Series in Materials for Electronic and Optoelectronic Applications, Spintronics: Materials, Devices and Applications explores giant magneto-resistance (GMR) and tunneling magnetic resistance (TMR) materials, spin-transfer torque and spin-orbit torque materials, spin oscillators, and spin materials for use in artificial neural networks. Applications in multi-ferroelectric and antiferromagnetic materials are presented as well. This book also includes: A thorough introduction to recent research developments in the fields of spintronic materials, devices, and applications Comprehensive explorations of skymions, magnetic semiconductors, and antiferromagnetic materials Practical discussions of spin-transfer torque materials and devices for magnetic random-access memory In-depth examinations of giant magneto-resistance materials and devices for magnetic sensors Perfect for advanced students and researchers in materials science, physics, electronics, and computer science, Spintronics: Materials, Devices and Applications will also earn a place in the libraries of professionals working in the manufacture of optics, photonics, and nanometrology equipment.
Publisher: John Wiley & Sons
ISBN: 1119698952
Category : Technology & Engineering
Languages : en
Pages : 340
Book Description
Discover the latest advances in spintronic materials, devices, and applications In Spintronics: Materials, Devices and Applications, a team of distinguished researchers delivers a holistic introduction to spintronic effects within cutting-edge materials and applications. Containing the perfect balance of academic research and practical application, the book discusses the potential—and the key limitations and challenges—of spintronic devices. The latest title in the Wiley Series in Materials for Electronic and Optoelectronic Applications, Spintronics: Materials, Devices and Applications explores giant magneto-resistance (GMR) and tunneling magnetic resistance (TMR) materials, spin-transfer torque and spin-orbit torque materials, spin oscillators, and spin materials for use in artificial neural networks. Applications in multi-ferroelectric and antiferromagnetic materials are presented as well. This book also includes: A thorough introduction to recent research developments in the fields of spintronic materials, devices, and applications Comprehensive explorations of skymions, magnetic semiconductors, and antiferromagnetic materials Practical discussions of spin-transfer torque materials and devices for magnetic random-access memory In-depth examinations of giant magneto-resistance materials and devices for magnetic sensors Perfect for advanced students and researchers in materials science, physics, electronics, and computer science, Spintronics: Materials, Devices and Applications will also earn a place in the libraries of professionals working in the manufacture of optics, photonics, and nanometrology equipment.
Spintronics Handbook, Second Edition: Spin Transport and Magnetism
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 0429784376
Category : Science
Languages : en
Pages : 497
Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Publisher: CRC Press
ISBN: 0429784376
Category : Science
Languages : en
Pages : 497
Book Description
The second edition offers an update on the single most comprehensive survey of the two intertwined fields of spintronics and magnetism, covering the diverse array of materials and structures, including silicon, organic semiconductors, carbon nanotubes, graphene, and engineered nanostructures. It focuses on seminal pioneering work, together with the latest in cutting-edge advances, notably extended discussion of two-dimensional materials beyond graphene, topological insulators, skyrmions, and molecular spintronics. The main sections cover physical phenomena, spin-dependent tunneling, control of spin and magnetism in semiconductors, and spin-based applications.
Issues in Applied Physics: 2011 Edition
Author:
Publisher: ScholarlyEditions
ISBN: 1464963363
Category : Science
Languages : en
Pages : 6150
Book Description
Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Publisher: ScholarlyEditions
ISBN: 1464963363
Category : Science
Languages : en
Pages : 6150
Book Description
Issues in Applied Physics / 2011 Edition is a ScholarlyEditions™ eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Applied Physics in this eBook to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Applied Physics: 2011 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Physics of Semiconductor Devices
Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310
Book Description
Contributed papers of the workshop held at IIT, Madras, in 2003.
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310
Book Description
Contributed papers of the workshop held at IIT, Madras, in 2003.
Molecular Beam Epitaxy
Author: Hajime Asahi
Publisher: John Wiley & Sons
ISBN: 111935501X
Category : Science
Languages : en
Pages : 510
Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Publisher: John Wiley & Sons
ISBN: 111935501X
Category : Science
Languages : en
Pages : 510
Book Description
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Handbook of Spintronic Semiconductors
Author: Weimin Chen
Publisher: CRC Press
ISBN: 042953373X
Category : Technology & Engineering
Languages : en
Pages : 348
Book Description
This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Publisher: CRC Press
ISBN: 042953373X
Category : Technology & Engineering
Languages : en
Pages : 348
Book Description
This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.
Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Proceedings of 19th World Congress on Materials Science and Engineering 2018
Author: ConferenceSeries
Publisher: ConferenceSeries
ISBN:
Category :
Languages : en
Pages : 212
Book Description
June 11-13, 2018 Barcelona, Spain Key Topics : Materials Science and Engineering, Nanomaterials and Nanotechnology, Biomaterials and Medical Devices, Polymer Science and Technology, Ceramics and Composite Materials, Electronic, Optical and Magnetic Materials, Emerging Smart Materials, Materials for Energy and Environmental Sustainability, Physics and Chemistry of Materials, Metals, Mining, Metallurgy and Materials, Mechanics, Characterization Techniques and Equipments, Graphene and 2D Materials,
Publisher: ConferenceSeries
ISBN:
Category :
Languages : en
Pages : 212
Book Description
June 11-13, 2018 Barcelona, Spain Key Topics : Materials Science and Engineering, Nanomaterials and Nanotechnology, Biomaterials and Medical Devices, Polymer Science and Technology, Ceramics and Composite Materials, Electronic, Optical and Magnetic Materials, Emerging Smart Materials, Materials for Energy and Environmental Sustainability, Physics and Chemistry of Materials, Metals, Mining, Metallurgy and Materials, Mechanics, Characterization Techniques and Equipments, Graphene and 2D Materials,
Handbook of Spin Transport and Magnetism
Author: Evgeny Y. Tsymbal
Publisher: CRC Press
ISBN: 1439803781
Category : Science
Languages : en
Pages : 797
Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Publisher: CRC Press
ISBN: 1439803781
Category : Science
Languages : en
Pages : 797
Book Description
In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Electronic Structure and Magnetism of Complex Materials
Author: David J. Singh
Publisher: Springer Science & Business Media
ISBN: 3662053101
Category : Science
Languages : en
Pages : 337
Book Description
Recent developments in electronic structure theory have led to a new understanding of magnetic materials at the microscopic level. This enables a truly first-principles approach to investigations of technologically important magnetic materials. Among the advances treated here have been practical schemes for handling non-collinear magnetic systems, including relativity, and an understanding of the origins and role of orbital magnetism within band structure formalisms. This book provides deep theoretical insight into magnetism, mahneatic materials, and magnetic systems. It covers these recent developments with review articles by some of the main originators of these developments.
Publisher: Springer Science & Business Media
ISBN: 3662053101
Category : Science
Languages : en
Pages : 337
Book Description
Recent developments in electronic structure theory have led to a new understanding of magnetic materials at the microscopic level. This enables a truly first-principles approach to investigations of technologically important magnetic materials. Among the advances treated here have been practical schemes for handling non-collinear magnetic systems, including relativity, and an understanding of the origins and role of orbital magnetism within band structure formalisms. This book provides deep theoretical insight into magnetism, mahneatic materials, and magnetic systems. It covers these recent developments with review articles by some of the main originators of these developments.